scholarly journals Achieving 6.7% Efficiency in P3HT/Indene-C70Bisadduct Solar Cells through the Control of Vertical Volume Fraction Distribution and Optimized Regio-Isomer Ratios

2016 ◽  
Vol 2 (12) ◽  
pp. 1600362 ◽  
Author(s):  
Dimitar I. Kutsarov ◽  
Ilija Rašović ◽  
Alexandros Zachariadis ◽  
Argiris Laskarakis ◽  
Maria A. Lebedeva ◽  
...  
2011 ◽  
Vol 347-353 ◽  
pp. 870-873
Author(s):  
Chun Rong Xue

Nanocrystalline silicon film has become the research hit of today’ s P-V solar technology. It’s optical band gap was controlled through changing the grain size and crystalline volume fraction for the quanta dimension effect. The crystalline volume fraction in nc-Si:H is modulated by varying the hydrogen concentration in the silane plasma. Also, the crystallinity of the material increases with increasing hydrogen dilution ratio, the band tail energy width of the nc-Si:H concurrently decreases. Two sets of nc-Si:H solar cells were made with different layer thicknesss, their electronic and photonic bandgap, absorption coefficient, optical band gap, nanocrystalline grain size(D), and etc have been stuied. In addition, we discussed the relationship between the stress of nc-Si thin films and H2 ratio. At last nc-Si:H solar cells have been designed and prepared successfully in the optimized processing parameters.


2007 ◽  
Vol 558-559 ◽  
pp. 1201-1206 ◽  
Author(s):  
Mihaela Teodorescu ◽  
Patrice Lasne ◽  
Roland E. Logé

The present work concerns the simulation of metallurgical evolutions in 3D multi-pass forming processes. In this context, the analyzed problem is twofold. One point refers to the management of the microstructure evolution during each pass or each inter-pass period and the other point concerns the management of the multi-pass aspects (different grain categories, data structure). In this framework, a model is developed and deals with both aspects. The model considers the microstructure as a composite made of a given (discretized) number of phases which have their own specific properties. The grain size distribution and the recrystallized volume fraction distribution of the different phases evolve continuously during a pass or inter-pass period. With this approach it is possible to deal with the heterogeneity of the microstructure and its evolution in multi-pass conditions. Both dynamic and static recrystallization phenomena are taken into account, with typical Avrami-type equations. The present model is implemented in the Finite Element code FORGE2005®. 3D numerical simulation results for a multi-pass process are presented.


2005 ◽  
Vol 63 (12) ◽  
pp. 1719-1740 ◽  
Author(s):  
Lasse M. Heikkinen ◽  
Robert M. West ◽  
Marko Vauhkonen

2018 ◽  
Vol 2018 ◽  
pp. 1-8
Author(s):  
Wenlin Wang ◽  
Fangtian Wang ◽  
Bin Zhao ◽  
Gang Li

Mine gas overflow is a serious threat to the safe and efficient longwall mining of gassy coal seams. Based on the field mining conditions and gas extraction of the fully mechanized top-coal caving face of a gassy coal mine, the space volume fraction distribution and emission (extraction rate) of gas in the face were tested by an arrangement of measuring points in the stereo grid. The isograms of gas volume fraction distribution for each measurement section and air direction in the face are drawn. The research shows that each measurement section gas volume fraction distribution is presented for an asymmetric concave curve along the vertical direction of the coal wall in the air-inlet side and the air-return side of the face; on the working face air-return side, the determination of gas volume fraction distribution of the section appears as falling straight line along the vertical direction of the coal wall. Before the first weighting, the absolute quantity of gas emission in the working face increased with the advancing of the working face, reached the maximum at the time of the first weighting, and then remained stable.


1977 ◽  
Vol 99 (3) ◽  
pp. 309-314 ◽  
Author(s):  
H. C. Simmons

The paper presents data on the drop-size/volume-fraction distributions of sprays observed with a large number of gas-turbine fuel nozzles of different types including both pressure and air-atomizers, using a range of fuel viscosities, at a variety of operating conditions. The data were obtained by both optical and wax-droplet methods. It is shown that a universal nondimensional correlation can be established for all the fuel nozzles when the drop-size is normalized to the mass median diameter. The correlation enables prediction of the drop-size/volume-fraction distribution for a spray given only the mass median or Sauter mean diameter.


2005 ◽  
Vol 128 (1) ◽  
pp. 168-175 ◽  
Author(s):  
J. Y. Jang ◽  
M. M. Khonsari

This paper is devoted to a study of the enduring contact between granules of powder lubricants in an effort to better understand the flow characteristics of powder lubricants. Appropriate formulation of the governing equations is reported that can be used for prediction of the flow velocity, pseudo temperature, and volume fraction distribution of powders for a wide range of operating speeds. A set of parametric simulations and a limiting analytical solution is presented for predicting the behavior of a powder lubricant under low operating speeds when the enduring contact tends to dominate the kinetic regime. The limiting solution shows that below a certain sliding speed the volume fraction remains unchanged due to the effect of the enduring contact. It is also shown that below this limiting speed the enduring contact plays a major role and should not be neglected.


2002 ◽  
Vol 715 ◽  
Author(s):  
R. E. I. Schropp ◽  
Y. Xu ◽  
E. Iwaniczko ◽  
G. A. Zaharias ◽  
A. H. Mahan

AbstractWe have explored which deposition parameters in Hot Wire CVD have the largest impact on the quality of microcrystalline silicon (μc-Si) made at deposition rates (Rd) < 10 Å/s for use in thin film solar cells. Among all parameters, the filament temperature (Tfil) appears to be crucial for making device quality films. Using two filaments and a filament-substrate spacing of 3.2 cm, μc-Si films, using seed layers, can be deposited at high Tfil (∼2000°C) with a crystalline volume fraction < 70-80 % at Rd's < 30 Å/s. Although the photoresponse of these layers is high (< 100), they appear not to be suitable for incorporation into solar cells, due to their porous nature. n-i-p cells fabricated on stainless steel with these i-layers suffer from large resistive effects or barriers, most likely due to the oxidation of interconnected pores in the silicon layer. The porosity is evident from FTIR measurements showing a large oxygen concentration at ∼1050 cm-1, and is correlated with the 2100 cm-1 signature of most of the Si-H stretching bonds. Using a Tfil of 1750°C, however, the films are more compact, as seen from the absence of the 2100 cm-1 SiH mode and the disappearance of the FTIR Si-O signal, while the high crystalline volume fraction (< 70-80 %) is maintained. Using this Tfil and a substrate temperature of 400°C, we obtain an efficiency of 4.9 % for cells with a Ag/ZnO back reflector, with an i-layer thickness of only ∼0.7 μm. High values for the quantum efficiency extend to very long wavelengths, with values of 33 % at 800 nm and 15 % at 900 nm, which are unequalled by a-SiGe:H alloys. Further, by varying the substrate temperature to enable deposition near the microcrystalline to amorphous transition (‘edge’) and incorporating variations in H2 dilution during deposition of the bulk, efficiencies of 6.0 % have been obtained. The Rd's of these i-layers are 8-10 Å/s, and are the highest to date obtained with HWCVD for microcrystalline layers used in cells with efficiencies of ∼6 %.


2007 ◽  
Vol 22 (5) ◽  
pp. 1128-1137 ◽  
Author(s):  
Guozhen Yue ◽  
Baojie Yan ◽  
Gautam Ganguly ◽  
Jeffrey Yang ◽  
Subhendu Guha

Light-induced metastability in hydrogenated nanocrystalline silicon (nc-Si:H) single-junction solar cells was studied systematically. First, we observed no light-induced degradation when the photon energy was lower than the band gap of the amorphous phase; degradation occurred when the energy was higher than the band gap in the amorphous phase. The light-induced degradation could be annealed away at an elevated temperature. We concluded that the light-induced defect generation occurred mainly in the amorphous phase. Second, forward current injection did not degrade the nc-Si:H cell performance. However, a reverse bias during light soaking enhanced the degradation. Third, the nc-Si:H cells made with an optimized hydrogen dilution profile showed minimal degradation although these cells had a high amorphous volume fraction. This indicated that the amorphous volume fraction was not the only factor determining the degradation. Other factors also played important roles in the nc-Si:H stability.


2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Yen-Tang Huang ◽  
Hung-Jung Hsu ◽  
Shin-Wei Liang ◽  
Cheng-Hang Hsu ◽  
Chuang-Chuang Tsai

Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys were developed for application in Si-based thin-film solar cells. The effects of thegermane concentration(RGeH4)and thehydrogen ratio(RH2)on theμc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H andμc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed inμc-Si1-xGex:H. Moreover, a higherRH2significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected byRH2inμc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasingRGeH4, the accompanied increase in Ge content ofμc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization ofRH2andRGeH4, the single-junctionμc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared toμc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.


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