Monitoring of Energy Conservation and Losses in Molecular Junctions through Characterization of Light Emission

2016 ◽  
Vol 2 (12) ◽  
pp. 1600351 ◽  
Author(s):  
Oleksii Ivashenko ◽  
Adam Johan Bergren ◽  
Richard L. McCreery
Keyword(s):  
Energy Conservation ◽  
Light Emission ◽  
Molecular Junctions

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

Characterization of Nanoscale Molecular Junctions

2004 ◽  
pp. 1-12
Author(s):  
Artur Erbe ◽  
Zhenan Bao ◽  
David Abusch-Magder ◽  
Donald M. Tennant ◽  
Nikolai Zhitenev
Keyword(s):  
Molecular Junctions

scholarly journals Spontaneous Light Emission from Molecular Junctions: Theoretical Analysis of Upconversion Signal

2019 ◽  
Vol 123 (49) ◽  
pp. 10594-10598 ◽  
Author(s):  
Hari Kumar Yadalam ◽  
Souvik Mitra ◽  
Upendra Harbola
Keyword(s):  
Theoretical Analysis ◽  
Light Emission ◽  
Molecular Junctions

Spray pyrolysis synthesis and characterization of Mg1-xSrxMoO4 heterostructure with white light emission

2020 ◽  
Vol 813 ◽  
pp. 152235 ◽  
Author(s):  
A.A.G. Santiago ◽  
R.L. Tranquilin ◽  
P. Botella ◽  
F.J. Manjón ◽  
D. Errandonea ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
White Light ◽  
Light Emission ◽  
White Light Emission ◽  
Synthesis And Characterization ◽  
Pyrolysis Synthesis

Noise characterization of molecular junctions

2017 ◽  
Author(s):  
V. Handziuk ◽  
M. Coppola ◽  
V. Sydoruk ◽  
F. Gasparyan ◽  
D. Mayer ◽  
...  
Keyword(s):  
Molecular Junctions ◽  
Noise Characterization

Characterization of light emission from amorphous chalcogenide switches

1979 ◽  
Vol 34 (11) ◽  
pp. 733-734 ◽  
Author(s):  
P. J. Walsh ◽  
D. Pooladdej ◽  
M. J. Thompson ◽  
J. Allison
Keyword(s):  
Light Emission ◽  
Amorphous Chalcogenide

Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes

2011 ◽  
Vol 520 (1) ◽  
pp. 445-447 ◽  
Author(s):  
Hao Zheng ◽  
Z.X. Mei ◽  
Z.Q. Zeng ◽  
Y.Z. Liu ◽  
L.W. Guo ◽  
...  
Keyword(s):  
Light Emission ◽  
High Quality ◽  
Fabrication And Characterization

Characterization of Microporous Silicon Fabricated by Immersion Scanning

1991 ◽  
Vol 256 ◽  
Author(s):  
E. Bassous ◽  
M. Freeman ◽  
J.-M. Halbout ◽  
S. S. lyer ◽  
V. P. Kesan ◽  
...  
Keyword(s):  
Light Emission ◽  
Forward Bias ◽  
Visible Region ◽  
Thermal Desorption Spectroscopy ◽  
Hydrogen Desorption ◽  
Si Substrates ◽  
Desorption Spectrum ◽  
Pn Junctions ◽  
Pl Intensity

ABSTRACTA novel immersion scanning technique for making microporous silicon has been successfully applied to blank and lithographically patterned Si substrates. The advantages of the method lie in its simplicity, speed and adaptability to large and odd-size substrates. The photoluminescence (PL) spectra of microporous Si show a continuous decrease in intensity between 200K and 2K, but are fully reversible. Thermal desorption spectroscopy on microporous Si shows a classic hydrogen desorption spectrum which coincides with a quenching of the PL intensity. Under constant excitation, a degradation of PL Intensity occurs in oxygen and wet nitrogen but is only partially reversible in dry N2. Microporous Si PN junctions exhibiting normal I-V characteristics have been successfully fabricated with standard Si VLSI processes. Visible light emission under forward bias is detected which increases linearly In Intensity with Input current. This is the first observation of electroluminescence in the visible region from microporous SI PN junctions.

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