Characterization of light emission from amorphous chalcogenide switches

1979 ◽  
Vol 34 (11) ◽  
pp. 733-734 ◽  
Author(s):  
P. J. Walsh ◽  
D. Pooladdej ◽  
M. J. Thompson ◽  
J. Allison
Keyword(s):  
Light Emission ◽  
Amorphous Chalcogenide

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

Spray pyrolysis synthesis and characterization of Mg1-xSrxMoO4 heterostructure with white light emission

2020 ◽  
Vol 813 ◽  
pp. 152235 ◽  
Author(s):  
A.A.G. Santiago ◽  
R.L. Tranquilin ◽  
P. Botella ◽  
F.J. Manjón ◽  
D. Errandonea ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
White Light ◽  
Light Emission ◽  
White Light Emission ◽  
Synthesis And Characterization ◽  
Pyrolysis Synthesis

Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes

2011 ◽  
Vol 520 (1) ◽  
pp. 445-447 ◽  
Author(s):  
Hao Zheng ◽  
Z.X. Mei ◽  
Z.Q. Zeng ◽  
Y.Z. Liu ◽  
L.W. Guo ◽  
...  
Keyword(s):  
Light Emission ◽  
High Quality ◽  
Fabrication And Characterization

Characterization of Microporous Silicon Fabricated by Immersion Scanning

1991 ◽  
Vol 256 ◽  
Author(s):  
E. Bassous ◽  
M. Freeman ◽  
J.-M. Halbout ◽  
S. S. lyer ◽  
V. P. Kesan ◽  
...  
Keyword(s):  
Light Emission ◽  
Forward Bias ◽  
Visible Region ◽  
Thermal Desorption Spectroscopy ◽  
Hydrogen Desorption ◽  
Si Substrates ◽  
Desorption Spectrum ◽  
Pn Junctions ◽  
Pl Intensity

ABSTRACTA novel immersion scanning technique for making microporous silicon has been successfully applied to blank and lithographically patterned Si substrates. The advantages of the method lie in its simplicity, speed and adaptability to large and odd-size substrates. The photoluminescence (PL) spectra of microporous Si show a continuous decrease in intensity between 200K and 2K, but are fully reversible. Thermal desorption spectroscopy on microporous Si shows a classic hydrogen desorption spectrum which coincides with a quenching of the PL intensity. Under constant excitation, a degradation of PL Intensity occurs in oxygen and wet nitrogen but is only partially reversible in dry N2. Microporous Si PN junctions exhibiting normal I-V characteristics have been successfully fabricated with standard Si VLSI processes. Visible light emission under forward bias is detected which increases linearly In Intensity with Input current. This is the first observation of electroluminescence in the visible region from microporous SI PN junctions.

Optical Characterization of Individual Nanostructures by STM Light Emission

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Ushioda
Keyword(s):  
Quantum Wells ◽  
Scanning Tunneling Microscope ◽  
Light Emission ◽  
Electronic Transitions ◽  
Scanning Tunneling ◽  
Surface Geometry ◽  
Future Expectations ◽  
Semiconductor Quantum Wells ◽  
Stm Light Emission

AbstractVisible light is emitted when electrons (holes) are injected into a sample from the tip of the scanning tunneling microscope (STM). By analyzing the spectra of the emitted light, one can not only determine the surface geometry by usual STM imaging, but also learn the electronic and optical properties of specific individual nanostructures. This technique has been applied to investigate the electronic transitions of individual protrusions of porous Si and semiconductor quantum wells of AlGaAs/GaAs. The usefulness, limitations, and future expectations of this novel technique are discussed.

Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode

2013 ◽  
Vol 538 ◽  
pp. 324-327 ◽  
Author(s):  
Chao Xiong ◽  
An Cheng Xu ◽  
Xing Zhong Lu ◽  
Lei Chen ◽  
Xi Fang Zhu ◽  
...  
Keyword(s):  
Light Emission ◽  
Low Cost ◽  
Forward Bias ◽  
Growth Direction ◽  
Heterojunction Diode ◽  
Conduction Band Offset ◽  
Single Carrier ◽  
Linear Relationships ◽  
Voltage Curve

The p-CuI /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal γ-CuI films are polycrystalline nature and observed preferential orientation along the (111) axis aligning with the growth direction. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuI/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 1.5 eV and 0.98 eV, respectively. The current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at forward bias voltages. The electronic potential barrier in p-CuI/n-Si heterojunction interface higher than hole at forward bias voltages. In this voltages area, a single carrier injuction was induced and the main current of p-CuI/n-Si heterojunction is hole current.This heterojunction diode can be good used for light emission devices and photovoltaic devices.

Synthesis and structure of new microporous Nd(III) silicates of the rhodesite group

2015 ◽  
Vol 230 (5) ◽  
Author(s):  
Rui F. Munhá ◽  
Duarte Ananias ◽  
Filipe A. Almeida Paz ◽  
João Rocha
Keyword(s):  
Structural Characterization ◽  
Light Emission ◽  
Infrared Light ◽  
Emission Properties

AbstractThe synthesis and structural characterization of two novel trivalent neodymium microporous silicates whose structures are reminiscent of the structure of mineral montregianite of the rhodesite group, and their infrared light-emission properties are reported. The compound KNa

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