Fibrous Epoxy Substrate with High Thermal Conductivity and Low Dielectric Property for Flexible Electronics

2016 ◽  
Vol 2 (5) ◽  
pp. 1500485 ◽  
Author(s):  
Xiaoliang Zeng ◽  
Lei Ye ◽  
Kun Guo ◽  
Rong Sun ◽  
Jianbin Xu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Property ◽  
Flexible Electronics ◽  
High Thermal Conductivity ◽  
Low Dielectric

scholarly journals Preparation and properties of MWCNTs-BNNSs/epoxy composites with high thermal conductivity and low dielectric loss

2020 ◽  
Vol 24 ◽  
pp. 100985 ◽  
Author(s):  
Rui Wang ◽  
Congzhen Xie ◽  
Shoukang Luo ◽  
Huasong Xu ◽  
Bin Gou ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Loss ◽  
High Thermal Conductivity ◽  
Epoxy Composites ◽  
Low Dielectric

scholarly journals Synergistic Effects of Boron Nitride (BN) Nanosheets and Silver (Ag) Nanoparticles on Thermal Conductivity and Electrical Properties of Epoxy Nanocomposites

Polymers ◽  
2020 ◽  
Vol 12 (2) ◽  
pp. 426 ◽  
Author(s):  
Yunjian Wu ◽  
Xiaoxing Zhang ◽  
Ankit Negi ◽  
Jixiong He ◽  
Guoxiong Hu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Properties ◽  
Boron Nitride ◽  
Polymer Composites ◽  
Synergistic Effects ◽  
High Thermal Conductivity ◽  
Epoxy Nanocomposites ◽  
Transfer Path ◽  
Low Dielectric ◽  
Low Permittivity

Polymer composites, with both high thermal conductivity and high electrical insulation strength, are desirable for power equipment and electronic devices, to sustain increasingly high power density and heat flux. However, conventional methods to synthesize polymer composites with high thermal conductivity often degrade their insulation strength, or cause a significant increase in dielectric properties. In this work, we demonstrate epoxy nanocomposites embedded with silver nanoparticles (AgNPs), and modified boron nitride nanosheets (BNNSs), which have high thermal conductivity, high insulation strength, low permittivity, and low dielectric loss. Compared with neat epoxy, the composite with 25 vol% of binary nanofillers has a significant enhancement (~10x) in thermal conductivity, which is twice of that filled with BNNSs only (~5x), owing to the continuous heat transfer path among BNNSs enabled by AgNPs. An increase in the breakdown voltage is observed, which is attributed to BNNSs-restricted formation of AgNPs conducting channels that result in a lengthening of the breakdown path. Moreover, the effects of nanofillers on dielectric properties, and thermal simulated current of nanocomposites, are discussed.

Hot-pressing sintered AlN-BN ceramics with high thermal conductivity and low dielectric loss

2020 ◽  
Vol 46 (6) ◽  
pp. 8431-8437
Author(s):  
Pei Yang ◽  
Lixiang Wang ◽  
Weihua Zhao ◽  
Laixin Cai ◽  
Yongbao Feng
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Loss ◽  
Hot Pressing ◽  
High Thermal Conductivity ◽  
Low Dielectric

High-k Boron Nitride Sheets/Polyimide Hybrid Dielectric Layers for the Fabrication of Flexible Organic Transistors on Commercial Graphite Paper

NANO ◽  
2020 ◽  
Vol 15 (11) ◽  
pp. 2050145
Author(s):  
Miao Zhu ◽  
Xiaoyun Wei ◽  
Jupeng Cao ◽  
Wei Xie ◽  
Changwei Zou ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Boron Nitride ◽  
Temperature Sensitivity ◽  
Flexible Electronics ◽  
High Thermal Conductivity ◽  
Organic Transistors ◽  
Dielectric Layers ◽  
High K ◽  
Overall Stability ◽  
Circuit Integration

Organic transistors are crucial components in future flexible electronics due to their excellent properties and ease of circuit integration. Previously, we demonstrated that flexible organic (polyimide) thermal transistors could be prepared using commercial graphite paper as the substrate. These materials exhibited excellent temperature sensitivity, linearity and recoverability due to the intrinsically high thermal conductivity of graphite. In this study, boron nitride (BN) sheets/polyimide hybrid dielectric layers were synthesized for the fabrication of flexible organic transistors using a commercial graphite paper. Under test, the results showed that the introduction of BN sheets was beneficial in improving the mobility and transistor characteristics of the device, as well as enhancing the overall stability. The as-fabricated transistors virtually exhibited no hysteresis at all BN contents.

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