InGaO3(ZnO) Superlattice Nanowires for High-Performance Ultraviolet Photodetectors

2015 ◽  
Vol 1 (7) ◽  
pp. 1500054 ◽  
Author(s):  
Zheng Lou ◽  
Ludong Li ◽  
Guozhen Shen
Keyword(s):  
High Performance ◽  
Ultraviolet Photodetectors

Surface photo-charge effect in doped-ZnO nanorods for high-performance self-powered ultraviolet photodetectors

Nanoscale ◽  
2017 ◽  
Vol 9 (13) ◽  
pp. 4536-4543 ◽  
Author(s):  
Buddha Deka Boruah ◽  
Shanmukh Naidu Majji ◽  
Abha Misra
Keyword(s):  
High Performance ◽  
Zno Nanorods ◽  
Charge Effect ◽  
Doped Zno ◽  
Self Powered ◽  
Ultraviolet Photodetectors

scholarly journals High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

AIP Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 015015 ◽  
Author(s):  
Jian Gao ◽  
Wen-Jun Liu ◽  
Shi-Jin Ding ◽  
Hong-Liang Lu ◽  
David Wei Zhang
Keyword(s):  
Low Temperature ◽  
High Performance ◽  
Atomic Layer ◽  
Zno Films ◽  
Post Annealing ◽  
Ultraviolet Photodetectors

Titania:Graphdiyne nanocomposites for high-performance deep ultraviolet photodetectors based on mixed-phase MgZnO

2020 ◽  
Vol 825 ◽  
pp. 153882 ◽  
Author(s):  
Yan Li ◽  
Dan Kuang ◽  
Yanfei Gao ◽  
Jin Cheng ◽  
Xuyang Li ◽  
...  
Keyword(s):  
High Performance ◽  
Mixed Phase ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors

High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga2O3 layer

2019 ◽  
Vol 44 (9) ◽  
pp. 2197 ◽  
Author(s):  
Ruilin Meng ◽  
Xiaoli Ji ◽  
Zheng Lou ◽  
Jiankun Yang ◽  
Yonghui Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Ultraviolet Photodetectors

High-Performance Transparent Ultraviolet Photodetectors Based on InGaZnO Superlattice Nanowire Arrays

ACS Nano ◽  
2019 ◽  
Vol 13 (10) ◽  
pp. 12042-12051 ◽  
Author(s):  
Fangzhou Li ◽  
You Meng ◽  
Ruoting Dong ◽  
SenPo Yip ◽  
Changyong Lan ◽  
...  
Keyword(s):  
High Performance ◽  
Nanowire Arrays ◽  
Ultraviolet Photodetectors

scholarly journals Fabrication of GaN nano-towers based self-powered UV photodetector

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Lalit Goswami ◽  
Neha Aggarwal ◽  
Pargam Vashishtha ◽  
Shubhendra Kumar Jain ◽  
Shruti Nirantar ◽  
...  
Keyword(s):  
High Performance ◽  
Volume Ratio ◽  
Fast Time ◽  
Trap States ◽  
Barrier Heights ◽  
Photocurrent Generation ◽  
Lower Strain ◽  
Self Powered ◽  
Aln Buffer ◽  
Ultraviolet Photodetectors

AbstractThe fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar structure (nanotowers) grown on AlN buffer layer exhibits higher photocurrent generation due to high quality nanotowers morphology and increased surface/volume ratio which significantly enhances its responsivity upon ultraviolet exposure leading to outstanding performance from the developed detection device. The fabricated detector display low dark current (~ 12 nA), high ILight/IDark ratio (> 104), fast time-correlated transient response (~ 433 µs) upon ultraviolet (325 nm) illumination. A high photoresponsivity of 2.47 A/W is achieved in self-powered mode of operation. The reason behind such high performance could be attributed to built-in electric field developed from a difference in Schottky barrier heights will be discussed in detail. While in photoconductive mode, the responsivity is observed to be 35.4 A/W @ − 3 V along with very high external quantum efficiency (~ 104%), lower noise equivalent power (~ 10–13 WHz−1/2) and excellent UV–Vis selectivity. Nanotower structure with lower strain and dislocations as well as reduced trap states cumulatively contributed to augmented performance from the device. The utilization of these GaN-Nanotower structures can potentially be useful towards the fabrication of energy-efficient ultraviolet photodetectors.

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