scholarly journals Highly Sensitive, Ultrafast, and Broadband Photo‐Detecting Field‐Effect Transistor with Transition‐Metal Dichalcogenide van der Waals Heterostructures of MoTe 2 and PdSe 2

2021 ◽  
pp. 2003713
Author(s):  
Amir Muhammad Afzal ◽  
Muhammad Zahir Iqbal ◽  
Ghulam Dastgeer ◽  
Aqrab ul Ahmad ◽  
Byoungchoo Park
Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.


2016 ◽  
Vol 230 ◽  
pp. 374-379 ◽  
Author(s):  
Shofarul Wustoni ◽  
Sho Hideshima ◽  
Shigeki Kuroiwa ◽  
Takuya Nakanishi ◽  
Yasuro Mori ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document