scholarly journals Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

2020 ◽  
Vol 7 (21) ◽  
pp. 2001294 ◽  
Author(s):  
Tuan‐Anh Pham ◽  
Afzaal Qamar ◽  
Toan Dinh ◽  
Mostafa Kamal Masud ◽  
Mina Rais‐Zadeh ◽  
...  
Keyword(s):  
Environmental Monitoring ◽  
Semiconductor Nanowires ◽  
Wide Bandgap ◽  
Nanoelectromechanical Systems ◽  
Next Generation ◽  
Wide Bandgap Semiconductor

Wide Bandgap Semiconductor Nanowires for Sensing Applications

2019 ◽  
Vol 6 (2) ◽  
pp. 115-126
Author(s):  
Steve Pearton ◽  
David Norton ◽  
Fan Ren ◽  
Li-Chia Tien ◽  
Byoung Sam Kang ◽  
...  
Keyword(s):  
Semiconductor Nanowires ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Sensing Applications

The Promise and Perils of Wide-Bandgap Semiconductor Nanowires for Sensing, Electronic, and Photonic Applications

Small ◽  
2007 ◽  
Vol 3 (7) ◽  
pp. 1144-1150 ◽  
Author(s):  
Stephen J. Pearton ◽  
David P. Norton ◽  
Fan Ren
Keyword(s):  
Semiconductor Nanowires ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

Interface-engineered barium magnetoplumbite–wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions for full-duplexing phased arrays

2021 ◽  
Vol 119 (5) ◽  
pp. 051906
Author(s):  
C. Yu ◽  
P. Andalib ◽  
A. Sokolov ◽  
O. Fitchorova ◽  
W. Liang ◽  
...  
Keyword(s):  
Phased Arrays ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

2019 ◽  
Vol 31 (36) ◽  
pp. 1903580 ◽  
Author(s):  
Chuanhui Gong ◽  
Junwei Chu ◽  
Chujun Yin ◽  
Chaoyi Yan ◽  
Xiaozong Hu ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Confined Growth

Ferromagnetism of wide-bandgap semiconductor surfaces: Mg-doped AlN

2015 ◽  
Vol 54 (11) ◽  
pp. 110302 ◽  
Author(s):  
Sandhya Chintalapati ◽  
Yongqing Cai ◽  
Ming Yang ◽  
Lei Shen ◽  
Yuan Ping Feng
Keyword(s):  
Wide Bandgap ◽  
Semiconductor Surfaces ◽  
Wide Bandgap Semiconductor ◽  
Mg Doped

Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)

2015 ◽  
Vol 25 (43) ◽  
pp. 6802-6813 ◽  
Author(s):  
Pichaya Pattanasattayavong ◽  
Alexander D. Mottram ◽  
Feng Yan ◽  
Thomas D. Anthopoulos
Keyword(s):  
Wide Bandgap ◽  
Hole Transport ◽  
Transport Processes ◽  
Solution Processed ◽  
Wide Bandgap Semiconductor

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications

2014 ◽  
Vol 778-780 ◽  
pp. 967-970 ◽  
Author(s):  
Donald A. Gajewski ◽  
Sei Hyung Ryu ◽  
Mrinal Das ◽  
Brett Hull ◽  
Jonathan Young ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Large Sample Size ◽  
Next Generation ◽  
Process Technology ◽  
Power Switching ◽  
Comprehensive Reliability ◽  
Reliability Performance ◽  
Acceptance Tests ◽  
Frequency Power

We present new reliability results on the Cree, Inc., 4H-SiC, DMOSFET devices. The Cree DMOSFETs were developed to meet the demand of next-generation, high-frequency power switching applications, such as: dc-ac inversion, dc-dc conversion, and ac-dc rectification, with continually improving energy efficiency. The Cree Generation 2 DMOSFET process technology is now commercially available with 1200 V and 1700 V ratings. We have performed intrinsic reliability studies to ensure excellent wear-out performance and long field lifetime of the products. We have also performed large sample size qualification reliability acceptance tests to ensure the quality of the manufacturing and packaging processes. These comprehensive reliability studies establish new benchmarks for wide bandgap transistors and demonstrate that Crees MOSFETs meet or exceed all industrial reliability requirements. This achievement facilitates broad market adoption of this disruptive power switch technology.

Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Wide Bandgap Semiconductor ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

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