scholarly journals Broadband Metasurface Absorbers: Large‐Area, Ultrathin Metasurface Exhibiting Strong Unpolarized Ultrabroadband Absorption (Advanced Optical Materials 24/2019)

2019 ◽  
Vol 7 (24) ◽  
pp. 1970091
Author(s):  
Shangliang Wu ◽  
Yan Ye ◽  
Zhouying Jiang ◽  
Tianchi Yang ◽  
Linsen Chen
Keyword(s):  
2013 ◽  
Vol 1 (2) ◽  
pp. 109-109 ◽  
Author(s):  
Yun Seon Do ◽  
Jung Ho Park ◽  
Bo Yeon Hwang ◽  
Sung-Min Lee ◽  
Byeong-Kwon Ju ◽  
...  

2019 ◽  
Vol 11 (1) ◽  
Author(s):  
Henning Galinski ◽  
Andreas Wyss ◽  
Mattia Seregni ◽  
Huan Ma ◽  
Volker Schnabel ◽  
...  

Abstract Zero-index (ZI) materials are synthetic optical materials with a vanishing effective permittivity and/or permeability at a given design frequency. Recently, it has been shown that the permeability of a zero-index host material can be deterministically tuned by adding photonic dopants. Here, we apply metal-induced crystallization (MIC) in quasi-random metal–semiconductor composites to fabricate large-area zero-index materials. Using Ag–Si as a model system, we demonstrate that the localized crystallization of the semiconductor at the metal/semiconductor interface can be used as a design parameter to control light interaction in such a disordered system. The induced crystallization generates new zero-index states corresponding to a hybridized plasmonic mode emerging from selective coupling of light to the Ångstrom-sized crystalline shell of the semiconductor. Photonic doping can be used to enhance the transmission in these disordered metamaterials, as shown by simulations. Our results establish novel large-area zero-index materials for wafer-scale applications and beyond.


2017 ◽  
Vol 5 (22) ◽  
Author(s):  
Manohar Chirumamilla ◽  
Anisha Chirumamilla ◽  
Yuanqing Yang ◽  
Alexander S. Roberts ◽  
Peter Kjaer Kristensen ◽  
...  

2016 ◽  
Vol 4 (6) ◽  
pp. 974-974
Author(s):  
Himchan Cho ◽  
Su-Hun Jeong ◽  
Sung-Yong Min ◽  
Tae-Hee Han ◽  
Min-Ho Park ◽  
...  

2013 ◽  
Vol 1 (1) ◽  
pp. 108-108 ◽  
Author(s):  
Vaida Auzelyte ◽  
Benjamin Gallinet ◽  
Valentin Flauraud ◽  
Christian Santschi ◽  
Shourya Dutta-Gupta ◽  
...  

2019 ◽  
Vol 7 (9) ◽  
pp. 1970035
Author(s):  
Shaowei Wang ◽  
Feiliang Chen ◽  
Ruonan Ji ◽  
Mingming Hou ◽  
Fei Yi ◽  
...  

Author(s):  
G. Lehmpfuhl

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.


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