scholarly journals High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes

2020 ◽  
Vol 8 (7) ◽  
pp. 1901276
Author(s):  
Jing Li ◽  
Chao Yang ◽  
Lei Liu ◽  
Haicheng Cao ◽  
Shan Lin ◽  
...  
Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4428
Author(s):  
Susana Fernández ◽  
Fernando B. Naranjo ◽  
Miguel Ángel Sánchez-García ◽  
Enrique Calleja

III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 µm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy. The optical cavity was formed by a bottom distributed Bragg reflector based on 10 periods of Al0.3Ga0.7N/GaN, an Au-based Schottky contact as top mirror, and an active zone of 40 nm-thick GaN layer. The devices were fabricated with planar geometry. To evaluate the main benefits allowed by the optical cavity, conventional Schottky photodetectors were also processed. The results revealed a planar spectral response for the conventional photodetector, unlike the resonant devices that showed two raised peaks at 330 and 358 nm with responsivities of 0.34 and 0.39 mA/W, respectively. Both values were 80 times higher than the planar response of the conventional device. These results demonstrate the strong effect of the optical cavity to achieve the desired wavelength selectivity and to enhance the optical field thanks to the light resonance into the optical cavity. The research of such a combination of nitride-based Bragg mirror and thin active layer is the kernel of the present paper.


2006 ◽  
Vol 14 (1) ◽  
Author(s):  
H. Zogg ◽  
M. Arnold

AbstractNarrow spectral band infrared detectors are required for multispectral infrared imaging. Wavelength selectivity can be obtained by placing passive line filters in front of the detectors, or, the preferred choice, by making the detectors themselves wavelength selective. We review the first photovoltaic resonant cavity enhanced detectors (RCED) for the mid-IR range. The lead-chalcogenide (PbEuSe) photodetector is placed as a very thin layer inside an optical cavity. At least one side is terminated with an epitaxial Brugg mirror (consisting of quarter wavelength PbEuSe/BaF2 pairs), while the second mirror may be a metal. Linewidths are as narrow as 37 nm at a peak wavelength of 4400 nm, and peak quantum efficiencies up to above 50% are obtained.


2003 ◽  
Vol 783 ◽  
Author(s):  
Charles E Free

This paper discusses the techniques that are available for characterising circuit materials at microwave and millimetre wave frequencies. In particular, the paper focuses on a new technique for measuring the loss tangent of substrates at mm-wave frequencies using a circular resonant cavity. The benefits of the new technique are that it is simple, low cost, capable of good accuracy and has the potential to work at high mm-wave frequencies.


2016 ◽  
Vol 75 (4) ◽  
pp. 355-361
Author(s):  
V. P. Radionov ◽  
P. K. Nesterov ◽  
V. K. Kiseliov
Keyword(s):  

2013 ◽  
Vol 58 (3) ◽  
pp. 919-922 ◽  
Author(s):  
K. Granat ◽  
B. Opyd ◽  
D. Nowak ◽  
M. Stachowicz ◽  
G. Jaworski

Abstract The paper describes preliminary examinations on establishing usefulness criteria of foundry tooling materials in the microwave heating technology. Presented are measurement results of permittivity and loss tangent that determine behaviour of the materials in electromagnetic field. The measurements were carried-out in a waveguide resonant cavity that permits precise determination the above-mentioned parameters by perturbation technique. Examined were five different materials designed for use in foundry tooling. Determined was the loss factor that permits evaluating usefulness of materials in microwave heating technology. It was demonstrated that the selected plastics meet the basic criterion that is transparency for electromagnetic radiation.


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