scholarly journals Hot-Electron-Mediated Reactions: Hot-Electron-Mediated Photochemical Reactions: Principles, Recent Advances, and Challenges (Advanced Optical Materials 15/2017)

2017 ◽  
Vol 5 (15) ◽  
Author(s):  
Minho Kim ◽  
Mouhong Lin ◽  
Jiwoong Son ◽  
Hongxing Xu ◽  
Jwa-Min Nam
2017 ◽  
Vol 5 (15) ◽  
pp. 1700004 ◽  
Author(s):  
Minho Kim ◽  
Mouhong Lin ◽  
Jiwoong Son ◽  
Hongxing Xu ◽  
Jwa-Min Nam

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lifeng Wang ◽  
Zongwei Chen ◽  
Guijie Liang ◽  
Yulu Li ◽  
Runchen Lai ◽  
...  

Abstract Hot electrons can dramatically improve the efficiency of solar cells and sensitize energetically-demanding photochemical reactions. Efficient hot electron devices have been hindered by sub-picosecond intraband cooling of hot electrons in typical semiconductors via electron-phonon scattering. Semiconductor quantum dots were predicted to exhibit a “phonon bottleneck” for hot electron relaxation as their quantum-confined electrons would couple very inefficiently to phonons. However, typical cadmium selenide dots still exhibit sub-picosecond hot electron cooling, bypassing the phonon bottleneck possibly via an Auger-like process whereby the excessive energy of the hot electron is transferred to the hole. Here we demonstrate this cooling mechanism can be suppressed in copper-doped cadmium selenide colloidal quantum dots due to femtosecond hole capturing by copper-dopants. As a result, we observe a lifetime of ~8.6 picosecond for 1Pe hot electrons which is more than 30-fold longer than that in same-sized, undoped dots (~0.25 picosecond).


1987 ◽  
Vol 102 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
M. Anzlowar

ABSTRACTWe have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.


2018 ◽  
Vol 59 (18) ◽  
pp. 1691-1697 ◽  
Author(s):  
Yuma Otake ◽  
Hiroyuki Nakamura ◽  
Shinichiro Fuse

2017 ◽  
Vol 5 (15) ◽  
Author(s):  
Andrea Giugni ◽  
Bruno Torre ◽  
Marco Allione ◽  
Gobind Das ◽  
Zhenwei Wang ◽  
...  

1997 ◽  
Vol 7 (11) ◽  
pp. 2175-2189 ◽  
Author(s):  
Thierry Verbiest ◽  
Stephan Houbrechts ◽  
Martti Kauranen ◽  
Koen Clays ◽  
André Persoons

2019 ◽  
Vol 7 (3) ◽  
pp. 1970010
Author(s):  
Xiaoting Wang ◽  
Yu Cui ◽  
Tao Li ◽  
Ming Lei ◽  
Jingbo Li ◽  
...  

2020 ◽  
Vol 8 (8) ◽  
pp. 2070031 ◽  
Author(s):  
Wenjun Liu ◽  
Mengli Liu ◽  
Ximei Liu ◽  
Xiaoting Wang ◽  
Hui‐Xiong Deng ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document