Optimization and Performance Prediction of Tunnel Field‐Effect Transistors Based on Deep Learning

2021 ◽  
pp. 2100682
Author(s):  
Gang Wang ◽  
Shulong Wang ◽  
Lan Ma ◽  
Guosheng Wang ◽  
Jieyu Wu ◽  
...  
Keyword(s):  
Deep Learning ◽  
Performance Prediction ◽  
Field Effect ◽  
Field Effect Transistors ◽  
And Performance ◽  
Optimization And Performance

Fabrication and performance of diamond field effect transistors, transfer-doped with vanadium pentoxide

2021 ◽  
Author(s):  
James Weil ◽  
Pankaj B. Shah ◽  
Dmitry A. Ruzmetov ◽  
Mahesh R. Neupane ◽  
Leonard M. De La Cruz ◽  
...  
Keyword(s):  
Vanadium Pentoxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
And Performance

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

Recent developments in fabrication and performance of metal halide perovskite field-effect transistors

2020 ◽  
Vol 8 (47) ◽  
pp. 16691-16715
Author(s):  
Yu Liu ◽  
Ping-An Chen ◽  
Yuanyuan Hu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Halide ◽  
Device Performance ◽  
Metal Halide Perovskite ◽  
Recent Developments ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
And Performance

Recent developments in fabrication strategies and device performance of field-effect transistors based on metal halide perovskites are reviewed.

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