Quantum‐Dots Photosensor with Wide Bandgap P‐Type and N‐Type Oxide Semiconductors for High Detectivity and Responsivity

2019 ◽  
Vol 5 (1) ◽  
pp. 1900857 ◽  
Author(s):  
Yoseob Kim ◽  
Jeonggi Kim ◽  
Hyo‐Min Kim ◽  
Jin Jang
Keyword(s):  
Quantum Dots ◽  
Wide Bandgap ◽  
Oxide Semiconductors ◽  
P Type

scholarly journals Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

2019 ◽  
Vol 7 (21) ◽  
pp. 1900801 ◽  
Author(s):  
Somak Mitra ◽  
Yusin Pak ◽  
Naresh Alaal ◽  
Mohamed N. Hedhili ◽  
Dhaifallah R. Almalawi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Manganese Oxide ◽  
Optoelectronic Devices ◽  
Wide Bandgap ◽  
Deep Uv ◽  
P Type ◽  
Uv Range

Achieving p-type conductivity in wide-bandgap SnO2 by a two-step process

2021 ◽  
Vol 118 (11) ◽  
pp. 112102
Author(s):  
Wang Fu ◽  
Mingkai Li ◽  
Jiashuai Li ◽  
Guojia Fang ◽  
Pan Ye ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Step Process ◽  
Type Conductivity ◽  
P Type

Carrier dynamics in p-type InGaAs/GaAs quantum dots

2007 ◽  
Vol 18 (S1) ◽  
pp. 363-365 ◽  
Author(s):  
X. M. Wen ◽  
L. V. Dao ◽  
J. A. Davis ◽  
P. Hannaford ◽  
S. Mokkapati ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
P Type

scholarly journals Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

2019 ◽  
Vol 115 (17) ◽  
pp. 172105 ◽  
Author(s):  
Athith Krishna ◽  
Aditya Raj ◽  
Nirupam Hatui ◽  
Stacia Keller ◽  
Umesh K. Mishra
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Wide Bandgap ◽  
P Type
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