scholarly journals Room‐Temperature Chiral Light‐Emitting Diode Based on Strained Monolayer Semiconductors (Adv. Mater. 36/2021)

2021 ◽  
Vol 33 (36) ◽  
pp. 2170282
Author(s):  
Jiang Pu ◽  
Wenjin Zhang ◽  
Hirofumi Matsuoka ◽  
Yu Kobayashi ◽  
Yuhei Takaguchi ◽  
...  
Nanoscale ◽  
2021 ◽  
Author(s):  
Soon-Hwan Kwon ◽  
Tae-Hyeon Kim ◽  
Sang-Min Kim ◽  
Semi Oh ◽  
Kyoung-Kook Kim

Nanostructured semiconducting metal oxides such as SnO2, ZnO, TiO2, and CuO have been widely used to fabricate high performance gas sensors. To improve the sensitivity and stability of gas sensors,...


2012 ◽  
Vol 20 (14) ◽  
pp. 14921 ◽  
Author(s):  
Seongjae Cho ◽  
Byung-Gook Park ◽  
Changjae Yang ◽  
Stanley Cheung ◽  
Euijoon Yoon ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 825
Author(s):  
Fabio Murru ◽  
Francisco J. Romero ◽  
Roberto Sánchez-Mudarra ◽  
Francisco J. García Ruiz ◽  
Diego P. Morales ◽  
...  

A portable reconfigurable platform for hemoglobin determination based on inner filter quenching of room-temperature phosphorescent carbon dots (CDs) in the presence of H2O2 is described. The electronic setup consists of a light-emitting diode (LED) as the carbon dot optical exciter and a photodiode as a light-to-current converter integrated in the same instrument. The reconfigurable feature provides adaptability to use the platform as an analytical probe for CDs coming from different batches with some variations in luminescence characteristics. The variables of the reaction were optimized, such as pH, concentration of reagents, and response time; as well as the variables of the portable device, such as LED voltage, photodiode sensitivity, and adjustment of the measuring range by a reconfigurable electronic system. The portable device allowed the determination of hemoglobin with good sensitivity, with a detection limit of 6.2 nM and range up to 125 nM.


2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.


2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L502-L504 ◽  
Author(s):  
Pol Van Dorpe ◽  
Vasyl F. Motsnyi ◽  
Mayke Nijboer ◽  
Etienne Goovaerts ◽  
Viacheslav I. Safarov ◽  
...  

2005 ◽  
Vol 87 (21) ◽  
pp. 211107 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Toshio Kamiya ◽  
Masahiro Hirano ◽  
...  

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
F. Fuchs ◽  
V. A. Soltamov ◽  
S. Väth ◽  
P. G. Baranov ◽  
E. N. Mokhov ◽  
...  

2011 ◽  
Vol 99 (25) ◽  
pp. 251106 ◽  
Author(s):  
A. Lohrmann ◽  
S. Pezzagna ◽  
I. Dobrinets ◽  
P. Spinicelli ◽  
V. Jacques ◽  
...  

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