Ion Migration in Perovskite Light Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering

2021 ◽  
pp. 2108102
Author(s):  
Nan Li ◽  
Yongheng Jia ◽  
Yuwei Guo ◽  
Ni Zhao
2020 ◽  
Vol 30 (40) ◽  
pp. 2001834 ◽  
Author(s):  
Lin Zhang ◽  
Fang Yuan ◽  
Jun Xi ◽  
Bo Jiao ◽  
Hua Dong ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuwei Guo ◽  
Sofia Apergi ◽  
Nan Li ◽  
Mengyu Chen ◽  
Chunyang Yin ◽  
...  

AbstractPerovskite light emitting diodes suffer from poor operational stability, exhibiting a rapid decay of external quantum efficiency within minutes to hours after turn-on. To address this issue, we explore surface treatment of perovskite films with phenylalkylammonium iodide molecules of varying alkyl chain lengths. Combining experimental characterization and theoretical modelling, we show that these molecules stabilize the perovskite through suppression of iodide ion migration. The stabilization effect is enhanced with increasing chain length due to the stronger binding of the molecules with the perovskite surface, as well as the increased steric hindrance to reconfiguration for accommodating ion migration. The passivation also reduces the surface defects, resulting in a high radiance and delayed roll-off of external quantum efficiency. Using the optimized passivation molecule, phenylpropylammonium iodide, we achieve devices with an efficiency of 17.5%, a radiance of 1282.8 W sr−1 m−2 and a record T50 half-lifetime of 130 h under 100 mA cm−2.


2020 ◽  
Vol 12 (43) ◽  
pp. 48845-48853
Author(s):  
Qi Dong ◽  
Juliana Mendes ◽  
Lei Lei ◽  
Dovletgeldi Seyitliyev ◽  
Liping Zhu ◽  
...  

Author(s):  
Ziming Chen ◽  
Zhenchao Li ◽  
Tom Hopper ◽  
Artem A. Bakulin ◽  
Hin-Lap Yip

2020 ◽  
Vol 86 ◽  
pp. 105919
Author(s):  
Yuhan Wang ◽  
Yu Tian ◽  
Yu-Xin Luo ◽  
Jian-Ming Yang ◽  
Li-Peng Cheng ◽  
...  

2019 ◽  
Vol 58 (15) ◽  
pp. 1597-1624 ◽  
Author(s):  
Sangeetha Ashok Kumar ◽  
Jaya Seeli Shankar ◽  
Bhuvana K Periyasamy ◽  
Sanjay K. Nayak

2019 ◽  
Vol 7 (26) ◽  
pp. 8063-8069 ◽  
Author(s):  
Xiang-Long Li ◽  
Xinyi Cai ◽  
Muhammad Umair Ali ◽  
Shi-Jian Su ◽  
Hong Meng

Highly efficient TADF yellow OLEDs with an extremely low efficiency roll-off have been obtained herein via rational device engineering.


Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 1007 ◽  
Author(s):  
Dongxiang Luo ◽  
Qizan Chen ◽  
Ying Qiu ◽  
Menglong Zhang ◽  
Baiquan Liu

Recently, all-inorganic perovskite light-emitting diodes (PeLEDs) have attracted both academic and industrial interest thanks to their outstanding properties, such as high efficiency, bright luminance, excellent color purity, low cost and potentially good operational stability. Apart from the design and treatment of all-inorganic emitters, the device engineering is another significant factor to guarantee the high performance. In this review, we have summarized the state-of-the-art concepts for device engineering in all-inorganic PeLEDs, where the charge injection, transport, balance and leakage play a critical role in the performance. First, we have described the fundamental concepts of all-inorganic PeLEDs. Then, we have introduced the enhancement of device engineering in all-inorganic PeLEDs. Particularly, we have comprehensively highlighted the emergence of all-inorganic PeLEDs, strategies to improve the hole injection, approaches to enhance the electron injection, schemes to increase the charge balance and methods to decrease the charge leakage. Finally, we have clarified the issues and ways to further enhance the performance of all-inorganic PeLEDs.


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