Electro‐Optic Activity in Excess of 1000 pm V −1 Achieved via Theory‐Guided Organic Chromophore Design

2021 ◽  
pp. 2104174
Author(s):  
Huajun Xu ◽  
Delwin L. Elder ◽  
Lewis E. Johnson ◽  
Yovan de Coene ◽  
Scott R. Hammond ◽  
...  
2005 ◽  
Author(s):  
Hongxi Zhang ◽  
Nasser Peyghambarian ◽  
Mahmoud Fallahi ◽  
Jingdong Luo ◽  
Baoquan Chen ◽  
...  

2006 ◽  
Vol 937 ◽  
Author(s):  
Jin Joo Choi ◽  
Jong Sun Lim ◽  
Changjin Lee ◽  
Dong Wook Kim

ABSTRACTWe designed and synthesized a dendritic architecture in which three branches of the NLO-active component consisting of push-pull type conjugated structure were linked onto its core. Chemical structure of the dendritic nonlinear optical (NLO) chromophore was verified by NMR spectroscopy, which clearly showed that the conjugated bridge had a trans-conformation. The dendrimer exhibited that the broad absorption band centered at around 608 nm extending to 760 nm. It was thermally stable up to 275 °C in the nitrogen atmosphere. Polymer film was prepared by spincoating the solution of mixture of amorphous polycarbonate (APC) and the dendritic chromophore, which exhibited an electro-optic coefficient of 19 pm/V at 1.55 μm wavelength.


2005 ◽  
Author(s):  
Larry Dalton ◽  
Bruce Robinson ◽  
Alex Jen ◽  
Philip Ried ◽  
Bruce Eichinger ◽  
...  

Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.


1997 ◽  
Vol 7 (9) ◽  
pp. 1893-1898 ◽  
Author(s):  
G. Schirripa Spagnolo ◽  
D. Ambrosini ◽  
A. Ponticiello ◽  
D. Paoletti

Sign in / Sign up

Export Citation Format

Share Document