scholarly journals Novel Spin–Orbit Torque Generation at Room Temperature in an All‐Oxide Epitaxial La 0.7 Sr 0.3 MnO 3 /SrIrO 3 System

2021 ◽  
pp. 2008269
Author(s):  
Xiaoxi Huang ◽  
Shehrin Sayed ◽  
Joseph Mittelstaedt ◽  
Sandhya Susarla ◽  
Saba Karimeddiny ◽  
...  
2018 ◽  
Vol 2 (10) ◽  
pp. 1853-1858 ◽  
Author(s):  
Haichao Liu ◽  
Yu Gao ◽  
Jungang Cao ◽  
Tingxuan Li ◽  
Yating Wen ◽  
...  

A novel mechanism of folding-induced spin–orbit coupling enhancement is responsible for the efficient room temperature phosphorescence of a thianthrene emitter.


Nano Letters ◽  
2016 ◽  
Vol 16 (3) ◽  
pp. 1981-1988 ◽  
Author(s):  
Guoqiang Yu ◽  
Pramey Upadhyaya ◽  
Xiang Li ◽  
Wenyuan Li ◽  
Se Kwon Kim ◽  
...  

1997 ◽  
Vol 11 (03) ◽  
pp. 303-313 ◽  
Author(s):  
A. K. Bhatnagar ◽  
G. Fritsch ◽  
D. G. Naugle ◽  
R. Haberkern ◽  
M. Kandlbinder ◽  
...  

Room temperature electrical resistivity (ρ), temperature coefficient of resistivity (α) and Hall coefficient (R H ) of ( Cu 1-y Ti y)1-x Al x amorphous alloys, where y=0.36, 0.50 and 0.64 and x=0, 0.05 and 0.10 are presented. The low temperature dependence of resistivity and magnetoresistivity of a-( Cu 0.36 Ti 0.64)1-x Al x are also presented and discussed qualitatively in terms of quantum corrections. It is found that the addition of Al in a- Cu 0.36 Ti 0.64 alloy decreases the spin-orbit scattering time τ so .


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Mohammad Kazemi ◽  
Mark F. Bocko

Abstract Spin-orbit electronics (spin-orbitronics) has been widely discussed for enabling nonvolatile devices that store and process information with low power consumption. The potential of spin-orbitronics for memory and logic applications has been demonstrated by perpendicular anisotropy magnetic devices comprised of heavy-metal/ferromagnet or topological-insulator/ferromagnet bilayers, where the heavy metal or topological insulator provides an efficient source of spin current for manipulating information encoded in the bistable magnetization state of the ferromagnet. However, to reliably switch at room temperature, spin-orbit devices should be large to reduce thermal fluctuations, thereby compromising scalability, which in turn drastically increases power dissipation and degrades performance. Here, we show that the scalability is not a fundamental limitation in spin-orbitronics, and by investigating the interactions between the geometry of the ferromagnetic layer and components of the spin-orbit torque, we derive design rules that lead to deeply scalable spin-orbit devices. Furthermore, employing experimentally verified models, we propose deeply scaled spin-orbit devices exhibiting high-speed deterministic switching at room temperature. The proposed design principles are essential for design and implementation of very-large-scale-integration (VLSI) systems that provide high performance operation with low power consumption.


2018 ◽  
Vol 17 (9) ◽  
pp. 800-807 ◽  
Author(s):  
Mahendra DC ◽  
Roberto Grassi ◽  
Jun-Yang Chen ◽  
Mahdi Jamali ◽  
Danielle Reifsnyder Hickey ◽  
...  

2017 ◽  
Vol 119 (7) ◽  
Author(s):  
Jiahao Han ◽  
A. Richardella ◽  
Saima A. Siddiqui ◽  
Joseph Finley ◽  
N. Samarth ◽  
...  

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