1T GdN2 monolayer — Spin-orbit induced magnetic Dirac semiconductor stable at room temperature

2020 ◽  
Vol 529 ◽  
pp. 147129
Author(s):  
Zheng-Zhe Lin ◽  
Xi Chen
Keyword(s):  
Room Temperature ◽  
Spin Orbit

Efficient room-temperature phosphorescence based on a pure organic sulfur-containing heterocycle: folding-induced spin–orbit coupling enhancement

2018 ◽  
Vol 2 (10) ◽  
pp. 1853-1858 ◽  
Author(s):  
Haichao Liu ◽  
Yu Gao ◽  
Jungang Cao ◽  
Tingxuan Li ◽  
Yating Wen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Orbit Coupling ◽  
Organic Sulfur ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Room Temperature Phosphorescence ◽  
Sulfur Containing

A novel mechanism of folding-induced spin–orbit coupling enhancement is responsible for the efficient room temperature phosphorescence of a thianthrene emitter.

Room-Temperature Creation and Spin–Orbit Torque Manipulation of Skyrmions in Thin Films with Engineered Asymmetry

Nano Letters ◽  
2016 ◽  
Vol 16 (3) ◽  
pp. 1981-1988 ◽  
Author(s):  
Guoqiang Yu ◽  
Pramey Upadhyaya ◽  
Xiang Li ◽  
Wenyuan Li ◽  
Se Kwon Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Spin Orbit

Electron Transport Properties of Aluminium Substituted CuTi Amorphous Alloys

1997 ◽  
Vol 11 (03) ◽  
pp. 303-313 ◽  
Author(s):  
A. K. Bhatnagar ◽  
G. Fritsch ◽  
D. G. Naugle ◽  
R. Haberkern ◽  
M. Kandlbinder ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Electron Transport ◽  
Low Temperature ◽  
Amorphous Alloys ◽  
Room Temperature ◽  
Quantum Corrections ◽  
Spin Orbit ◽  
Electron Transport Properties ◽  
Temperature Coefficient Of Resistivity ◽  
Scattering Time

Room temperature electrical resistivity (ρ), temperature coefficient of resistivity (α) and Hall coefficient (R H ) of ( Cu 1-y Ti y)1-x Al x amorphous alloys, where y=0.36, 0.50 and 0.64 and x=0, 0.05 and 0.10 are presented. The low temperature dependence of resistivity and magnetoresistivity of a-( Cu 0.36 Ti 0.64)1-x Al x are also presented and discussed qualitatively in terms of quantum corrections. It is found that the addition of Al in a- Cu 0.36 Ti 0.64 alloy decreases the spin-orbit scattering time τ so .

scholarly journals Design rules for scalability in spin-orbit electronics

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Mohammad Kazemi ◽  
Mark F. Bocko
Keyword(s):  
Heavy Metal ◽  
Power Consumption ◽  
Low Power ◽  
Topological Insulator ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Thermal Fluctuations ◽  
Low Power Consumption ◽  
Spin Orbit ◽  
Design Rules

Abstract Spin-orbit electronics (spin-orbitronics) has been widely discussed for enabling nonvolatile devices that store and process information with low power consumption. The potential of spin-orbitronics for memory and logic applications has been demonstrated by perpendicular anisotropy magnetic devices comprised of heavy-metal/ferromagnet or topological-insulator/ferromagnet bilayers, where the heavy metal or topological insulator provides an efficient source of spin current for manipulating information encoded in the bistable magnetization state of the ferromagnet. However, to reliably switch at room temperature, spin-orbit devices should be large to reduce thermal fluctuations, thereby compromising scalability, which in turn drastically increases power dissipation and degrades performance. Here, we show that the scalability is not a fundamental limitation in spin-orbitronics, and by investigating the interactions between the geometry of the ferromagnetic layer and components of the spin-orbit torque, we derive design rules that lead to deeply scalable spin-orbit devices. Furthermore, employing experimentally verified models, we propose deeply scaled spin-orbit devices exhibiting high-speed deterministic switching at room temperature. The proposed design principles are essential for design and implementation of very-large-scale-integration (VLSI) systems that provide high performance operation with low power consumption.

scholarly journals Room-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1–x) films

2018 ◽  
Vol 17 (9) ◽  
pp. 800-807 ◽  
Author(s):  
Mahendra DC ◽  
Roberto Grassi ◽  
Jun-Yang Chen ◽  
Mahdi Jamali ◽  
Danielle Reifsnyder Hickey ◽  
...  
Keyword(s):  
High Spin ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Spin Orbit

scholarly journals Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator

2017 ◽  
Vol 119 (7) ◽  
Author(s):  
Jiahao Han ◽  
A. Richardella ◽  
Saima A. Siddiqui ◽  
Joseph Finley ◽  
N. Samarth ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Room Temperature ◽  
Spin Orbit

Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 403-406 ◽  
Author(s):  
Andreas Scholle ◽  
Siegmund Greulich-Weber ◽  
Eva Rauls ◽  
Wolf Gero Schmidt ◽  
Uwe Gerstmann
Keyword(s):  
Fine Structure ◽  
Room Temperature ◽  
Positive Sign ◽  
Spin Interaction ◽  
Zero Field ◽  
Spin Orbit ◽  
Zero Field Splitting ◽  
Defect Center ◽  
Field Splitting ◽  
Annealing Behavior

In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new EPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652•10-4 cm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit contribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal axis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin-orbit coup¬ling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior.

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