scholarly journals Modulating the Charge Transport in 2D Semiconductors via Energy‐Level Phototuning

2019 ◽  
Vol 31 (39) ◽  
pp. 1903402 ◽  
Author(s):  
Haixin Qiu ◽  
Yuda Zhao ◽  
Zhaoyang Liu ◽  
Martin Herder ◽  
Stefan Hecht ◽  
...  
2020 ◽  
Vol 8 (43) ◽  
pp. 15426-15435
Author(s):  
Haijun Bin ◽  
Indunil Angunawela ◽  
Ruijie Ma ◽  
Asritha Nallapaneni ◽  
Chenhui Zhu ◽  
...  

Introduction of chlorine in the conjugated side chains significantly improves open-circuit voltage and power conversion efficiency, benefiting from a lower HOMO energy level, well-balanced charge transport and superior nanoscale morphology.


2019 ◽  
Vol 115 (26) ◽  
pp. 263301 ◽  
Author(s):  
Stephen Sanderson ◽  
Bronson Philippa ◽  
George Vamvounis ◽  
Paul L. Burn ◽  
Ronald D. White

RSC Advances ◽  
2020 ◽  
Vol 10 (21) ◽  
pp. 12289-12296 ◽  
Author(s):  
Zezhu Jin ◽  
Yanru Guo ◽  
Shuai Yuan ◽  
Jia-Shang Zhao ◽  
Xiao-Min Liang ◽  
...  

The NiOx layer modified with NiOx nanoparticles obtains surface property optimization and energy level modulation, thus improving charge transport and device performance.


2019 ◽  
Vol 7 (25) ◽  
pp. 7618-7626 ◽  
Author(s):  
Kaiqiang Huang ◽  
Xue Zhao ◽  
Yuchang Du ◽  
Sanghyo Kim ◽  
Xiaohong Wang ◽  
...  

Six donor–acceptor (D–A) conjugated polymers, P1–P6, based on the novel electron acceptors bis-isoindigo (BIID) and bis-azaisoindigo (BAID), were designed and synthesized for solution-processed organic field-effect transistors.


2020 ◽  
Vol 13 (02) ◽  
pp. 2051003 ◽  
Author(s):  
Firdaus Bin Suhaimi ◽  
Suresh Palale ◽  
Lay Kuan Teh ◽  
Nripan Mathews ◽  
Subodh Mhaisalkar

The promising potential of achieving high efficiency organic tandem cells due to the widened absorption spectrum range has resulted in significant research in novel device concepts such as the modification of the recombination layer. In this study, a typically used charge transport interlayer in the recombination layer, MoO3, is modified by tuning the energy band and work function, with the help of an energy band model, to achieve energetic alignment without additional metallic layers. The energy level tuning is demonstrated by the co-evaporation of aluminum, which results in a doping effect. This shifts the work function of pristine MoO3 from 5.8[Formula: see text]eV to 4.3[Formula: see text]eV. The shift is proposed to be due to the formation of oxidized Al3+ and reduced MoO6+ that generates further mid-gap defect states and this shift increases with respect to Al concentration. The energy band shift changes the transport mechanism from hole-transporting to electron-transporting and the modification is modeled in this work. This suggests that recombination layer of MoO3/Al-MoO3 may have better energetic alignment and integrating this modified recombination layer results in improvement in the stacked device efficiency from 1.38% to 3.38% with enhancement in [Formula: see text], [Formula: see text] and fill factor. This enhancement is contributed from better aligned energy level and higher transparency of the recombination layer. The effective transparent recombination allows greater photon distribution to the top cell and increasing maximum matched photocurrent to the limiting subcell, thus improving photocurrent by 25% and overall efficiency up to 4.6%.


2020 ◽  
Vol 8 (46) ◽  
pp. 16333-16338
Author(s):  
Ke Zhou ◽  
Jie Liu ◽  
Huanli Dong ◽  
Shang Ding ◽  
Yonggang Zhen ◽  
...  

An efficient ambipolar OLET was constructed based on a high-mobility emissive 2,6-diphenylanthracene semiconductor via energy-level engineering, giving a narrowed ambipolar regime with strong light emission.


2009 ◽  
Author(s):  
Christopher D. Zangmeister ◽  
Steven W. Robey ◽  
Roger D. van Zee ◽  
Nadine E. Gruhn ◽  
Yuxing Yao ◽  
...  

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