scholarly journals Modification of NiOx hole transport layer for acceleration of charge extraction in inverted perovskite solar cells

RSC Advances ◽  
2020 ◽  
Vol 10 (21) ◽  
pp. 12289-12296 ◽  
Author(s):  
Zezhu Jin ◽  
Yanru Guo ◽  
Shuai Yuan ◽  
Jia-Shang Zhao ◽  
Xiao-Min Liang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Energy Level ◽  
Charge Transport ◽  
Surface Property ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Device Performance ◽  
Charge Extraction

The NiOx layer modified with NiOx nanoparticles obtains surface property optimization and energy level modulation, thus improving charge transport and device performance.

scholarly journals Energy Level Engineering of Charge Selective Contact and Halide Perovskite by Modulating Band Offset: Mechanistic Insights

2020 ◽  
Author(s):  
Yassine Raoui ◽  
Hamid Ez-Zahraouy ◽  
Samrana Kazim ◽  
Shahzada Ahmad
Keyword(s):  
Solar Cells ◽  
Energy Level ◽  
Conduction Band ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Conduction Band Minimum ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Band Offset ◽  
Interfacial Recombination

<p>Mixed cation and anion based perovskites solar cells (FAPbI<sub>3</sub>)<sub>0.85</sub>(MAPbBr<sub>3</sub>)<sub>0.15</sub> gave enhanced stability under outdoor conditions, however, it yielded limited power conversion efficiency when SnO<sub>2</sub> and Spiro-OMeTAD were employed as electron and hole transport layer (ETL/HTL). The inevitable interfacial recombination of charge carriers at ETL/perovskite and perovskite/HTL interface diminished the efficiency in planar (n-i-p) perovskite solar cells. Employing computational approach for uni-dimensional device simulator, the effect of band offset on charge recombination at both interfaces were investigated. We noted that it acquired cliff structure when the conduction band minimum of the ETL is lower than that of the perovskite, and thus maximizes interfacial recombination. However, if the conduction band minimum of ETL is higher than perovskite, i.e. spike structure is formed, which improve the performance of solar cell up to an optimum value of conduction band offset allowing to reach performance of 25.21%, with an open circuit voltage (<i>V</i><sub>oc</sub>) of 1231 mV, a current density <i>J</i><sub>sc</sub> of 24.57 mA/cm<sup>2</sup> and a fill factor of 83.28%. Additionally, we found that beyond the optimum offset value, large spike structure could decrease the performance. With an optimized, energy level of Spiro-OMeTAD and the thickness of mixed-perovskite layer performance of 26.56 % can be attained. Our results demonstrate a detailed understanding about the energy level tuning between the charge selective layers and perovskite and furthermore how the improvement in PV performance can be achieved by adjusting the energy level offset.</p>

Effect of NiO Precursor Solution Ageing on the Perovskite Film Formation and Their Integration as Hole Transport Material for Perovskite Solar Cells

2020 ◽  
Vol 20 (6) ◽  
pp. 3710-3717 ◽  
Author(s):  
Arjun Singh ◽  
Rahul Ranjan ◽  
Sudhir Ranjan ◽  
Anand Singh ◽  
Ashish Garg ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Precursor Solution ◽  
Hole Transport ◽  
Transport Layer ◽  
Growth Surface ◽  
Hole Transport Layer ◽  
Device Performance ◽  
Morphological Studies ◽  
Nio Films

Exceptional progress in the performance of perovskite solar cells in a very short time has made it a potential photovoltaic technology for future deployment. The compositional engineering in perovskite materials and other buffer layers makes it a feasible candidate for commercial applications in the near future. However, there are certain challenges associated with these devices which need to be addressed such as device stability, process dependent device efficiency, hole transport layer (HTL) etc. The device performance is highly dependent on the processing parameters of the precursors. Understanding the origin of this challenge is very crucial for reproducible device performance. In this work, we have focused on utilizing NiO as a HTL in planar perovskite solar cells and studied the ageing effect of NiO precursor solution on the perovskite film quality in terms of crystallinity, grain growth, surface morphology, and overall device performance. It is observed that the ageing of NiO precursor promotes the formation of NiO films with increased roughness which improves the perovskite film quality. Structural and morphological studies revealed that the perovskite films formed on aged NiO films were highly crystalline in nature, uniform and with larger grain size. Current– voltage characteristics under illumination show that the films casted from NiO aged solution are better for perovskite solar cell applications and result in reduced parasitic resistances and enhanced charge transport.

scholarly journals Nanoscale localized contacts for high fill factors in polymer-passivated perovskite solar cells

Science ◽  
2021 ◽  
Vol 371 (6527) ◽  
pp. 390-395
Author(s):  
Jun Peng ◽  
Daniel Walter ◽  
Yuhao Ren ◽  
Mike Tebyetekerwa ◽  
Yiliang Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Charge Transport ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
Free Hole ◽  
Trade Off

Polymer passivation layers can improve the open-circuit voltage of perovskite solar cells when inserted at the perovskite–charge transport layer interfaces. Unfortunately, many such layers are poor conductors, leading to a trade-off between passivation quality (voltage) and series resistance (fill factor, FF). Here, we introduce a nanopatterned electron transport layer that overcomes this trade-off by modifying the spatial distribution of the passivation layer to form nanoscale localized charge transport pathways through an otherwise passivated interface, thereby providing both effective passivation and excellent charge extraction. By combining the nanopatterned electron transport layer with a dopant-free hole transport layer, we achieved a certified power conversion efficiency of 21.6% for a 1-square-centimeter cell with FF of 0.839, and demonstrate an encapsulated cell that retains ~91.7% of its initial efficiency after 1000 hours of damp heat exposure.

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells

2016 ◽  
Vol 30 (27) ◽  
pp. 1650341 ◽  
Author(s):  
Quanrong Deng ◽  
Yiqi Li ◽  
Lian Chen ◽  
Shenggao Wang ◽  
Geming Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Conversion Efficiency ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
Device Performance ◽  
Interface Defects

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.

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