Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin-Film Transistors and Complementary Electronics

2018 ◽  
Vol 30 (34) ◽  
pp. 1802379 ◽  
Author(s):  
Ao Liu ◽  
Huihui Zhu ◽  
Won-Tae Park ◽  
Seok-Ju Kang ◽  
Yong Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Temperature Solution ◽  
P Type

In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors

2017 ◽  
Vol 5 (10) ◽  
pp. 2524-2530 ◽  
Author(s):  
Ao Liu ◽  
Shengbin Nie ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Chundan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Naoh Solution ◽  
Temperature Solution ◽  
One Step ◽  
P Type

Solution-processed p-type Cu2O thin films were fabricated via in-situ reaction of CuI film in NaOH solution and their applications in thin-film transistors were successfully demonstrated.

p-Type ${\hbox{Cu}}_{x}{\hbox{O}}$ Films Deposited at Room Temperature for Thin-Film Transistors

2012 ◽  
Vol 8 (1) ◽  
pp. 41-47 ◽  
Author(s):  
V. Figueiredo ◽  
E. Elangovan ◽  
R. Barros ◽  
J. V. Pinto ◽  
T. Busani ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
P Type

Erratum: “Thin-film transistors based on p-type Cu2O thin films produced at room temperature” [Appl. Phys. Lett. 96, 192102 (2010)]

2010 ◽  
Vol 96 (23) ◽  
pp. 239902 ◽  
Author(s):  
Elvira Fortunato ◽  
Vitor Figueiredo ◽  
Pedro Barquinha ◽  
Elangovan Elamurugu ◽  
Raquel Barros ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Cu2o Thin Films ◽  
P Type

scholarly journals Thin-film transistors based on p-type Cu2O thin films produced at room temperature

2010 ◽  
Vol 96 (19) ◽  
pp. 192102 ◽  
Author(s):  
Elvira Fortunato ◽  
Vitor Figueiredo ◽  
Pedro Barquinha ◽  
Elangovan Elamurugu ◽  
Raquel Barros ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Cu2o Thin Films ◽  
P Type

The Fabrication and Characterization of Amorphous Indium Zinc Oxide (In2O3:10wt%ZnO) based Thin Film Transistors

2005 ◽  
Vol 905 ◽  
Author(s):  
Burag Yaglioglu ◽  
Hyo-Young Yeom ◽  
Roderic Beresford ◽  
David Paine
Keyword(s):  
Thin Film ◽  
Carrier Concentration ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Active Matrix ◽  
Si Substrates ◽  
Gas Atmosphere ◽  
Sputter Deposited ◽  
P Type

AbstractThin film transistors were fabricated using amorphous IZO (In2O3-10wt%ZnO) with low carrier concentration (∼3×1017/cm3) for the channel material and a-IZO with high carrier concentration (∼2×1020/cm3) for source-drain metallization. The performance of a-IZO channel materials processed entirely at room temperature was established using a simple gate-down thin film transistor device. The TFT test structures were fabricated on p-type Si substrates with a thermally grown SiO2 gate oxide. The channel and metallization layers were sputter deposited from a commercially available IZO target at room temperature in a gas atmosphere containing 10 vol.% and 0 vol.% oxygen, respectively. The TFT devices are depletion mode n-channel devices with a high saturation mobility (∼20cm2/Vs) and high on/off ratio (∼108) and, as such, appear to be well suited for active matrix TFT applications.

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