Metal-Halide Perovskites for Gate Dielectrics in Field-Effect Transistors and Photodetectors Enabled by PMMA Lift-Off Process

2018 ◽  
Vol 30 (23) ◽  
pp. 1707412 ◽  
Author(s):  
Alwin Daus ◽  
Cristina Roldán-Carmona ◽  
Konrad Domanski ◽  
Stefan Knobelspies ◽  
Giuseppe Cantarella ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Metal Halide ◽  
Halide Perovskites ◽  
Lift Off

Recent developments in fabrication and performance of metal halide perovskite field-effect transistors

2020 ◽  
Vol 8 (47) ◽  
pp. 16691-16715
Author(s):  
Yu Liu ◽  
Ping-An Chen ◽  
Yuanyuan Hu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Halide ◽  
Device Performance ◽  
Metal Halide Perovskite ◽  
Recent Developments ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
And Performance

Recent developments in fabrication strategies and device performance of field-effect transistors based on metal halide perovskites are reviewed.

Metal Halide Perovskites: Synthesis, Ion Migration, and Application in Field-Effect Transistors

Small ◽  
2018 ◽  
Vol 14 (36) ◽  
pp. 1801460 ◽  
Author(s):  
Xuhai Liu ◽  
Dejian Yu ◽  
Xiufeng Song ◽  
Haibo Zeng
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Halide ◽  
Ion Migration ◽  
Halide Perovskites

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

2018 ◽  
Vol 57 (6S3) ◽  
pp. 06KA03
Author(s):  
Kenta Watanabe ◽  
Daiki Terashima ◽  
Mikito Nozaki ◽  
Takahiro Yamada ◽  
Satoshi Nakazawa ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Heterojunction Field Effect Transistors

Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

2009 ◽  
Vol 8 (11) ◽  
pp. 898-903 ◽  
Author(s):  
Bhola N. Pal ◽  
Bal Mukund Dhar ◽  
Kevin C. See ◽  
Howard E. Katz
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Sodium Beta Alumina ◽  
Beta Alumina

Low Temperature Device Processing Technology for II-VI Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
R.M. Kolbas ◽  
B.P. Sneed ◽  
J.F. Schetzina
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Layers ◽  
Processing Technologies ◽  
Device Processing ◽  
Device Structures ◽  
Lift Off ◽  
Processing Steps

ABSTRACTLow temperature (<60° C) processing technologies that avoid potentially damaging processing steps have been developed for devices fabricated from II-VI semiconductor epitaxial layers grown by photoassisted molecular beam epitaxy (MBE). These low temperature technologies include: 1) photolithography (1 µm geometries), 2) calibrated etchants (rates as low as 30 Å/s), 3) a metallization lift-off process employing a photoresist profiler, 4) an interlevel metal dielectric, and 5) an insulator technology for metal-insulator-semiconductor (MIS) structures. A number of first demonstration devices including field-effect transistors and p-n junctions have been fabricated from II-VI epitaxial layers grown by photoassisted MBE and processed using the technology described here. In this paper, two advanced device structures, processed at <60° C, will be presented: 1) CdTe:As-CdTe:In p-n junction detectors, grown in situ by photoassisted MBE, and 2) HgCdTe-HgTe-CdZnTe quantum-well modulation-doped field-effect transistors (MODFETs).

Parylene-Based Double-Layer Gate Dielectrics for Organic Field-Effect Transistors

2018 ◽  
Vol 10 (44) ◽  
pp. 37767-37772 ◽  
Author(s):  
Hyunjin Park ◽  
Hyungju Ahn ◽  
Jimin Kwon ◽  
Seongju Kim ◽  
Sungjune Jung
Keyword(s):  
Double Layer ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors
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