Predictive Model for the Meniscus-Guided Coating of High-Quality Organic Single-Crystalline Thin Films

2016 ◽  
Vol 28 (36) ◽  
pp. 8007-8013 ◽  
Author(s):  
Robby Janneck ◽  
Federico Vercesi ◽  
Paul Heremans ◽  
Jan Genoe ◽  
Cedric Rolin
Keyword(s):  
Thin Films ◽  
Predictive Model ◽  
High Quality ◽  
Single Crystalline

Self-assembly growth of high-quality SiC nanowires from Si thin films deposited on single-crystalline SiC wafers

2016 ◽  
Vol 42 (16) ◽  
pp. 18955-18959 ◽  
Author(s):  
Byeong Geun Kim ◽  
Byung-Sung Kim ◽  
Soon-Mok Choi ◽  
Ji Eun Lee ◽  
Seong-Min Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Self Assembly ◽  
High Quality ◽  
Single Crystalline ◽  
Sic Nanowires

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

High-quality textured SnSe thin films for self-powered, rapid-response photothermoelectric application

Nano Energy ◽  
2020 ◽  
Vol 72 ◽  
pp. 104742 ◽  
Author(s):  
Yujia Zhong ◽  
Li Zhang ◽  
Vincent Linseis ◽  
Bingchao Qin ◽  
Wenduo Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Rapid Response ◽  
High Quality ◽  
Self Powered

scholarly journals High quality ITO thin films grown by dc and RF sputtering without oxygen

2010 ◽  
Vol 43 (5) ◽  
pp. 055402 ◽  
Author(s):  
Ocal Tuna ◽  
Yusuf Selamet ◽  
Gulnur Aygun ◽  
Lutfi Ozyuzer
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
High Quality ◽  
Ito Thin Films

Microstructural and optical properties of high-quality Mg–Zn oxide thin films

2021 ◽  
Vol 127 ◽  
pp. 105690
Author(s):  
A. Sáenz-Trevizo ◽  
D. Kuchle-Mena ◽  
P. Pizá-Ruiz ◽  
P. Amézaga-Madrid ◽  
O. Solís-Canto ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxide Thin Films ◽  
High Quality
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