Polymer-Metal Schottky Contact with Direct-Current Outputs

2015 ◽  
Vol 28 (7) ◽  
pp. 1461-1466 ◽  
Author(s):  
Hao Shao ◽  
Jian Fang ◽  
Hongxia Wang ◽  
Liming Dai ◽  
Tong Lin
2016 ◽  
Vol 28 (7) ◽  
pp. 1524-1524
Author(s):  
Hao Shao ◽  
Jian Fang ◽  
Hongxia Wang ◽  
Liming Dai ◽  
Tong Lin

2021 ◽  
Author(s):  
Yanfang Meng ◽  
Long Zhang ◽  
Guangyuan Xu ◽  
Yinji Ma ◽  
Heling Wang ◽  
...  

Abstract Direct-current generators, especially those based on the Schottky contact between conductive polymers and metal electrodes, are efficient in converting mechanical stimuli into electrical energy. In contrast to triboelectric and piezoelectric generators, direct-current generators readily produce direct-current outputs and high currents that are crucial for integrating multiple energy-harvesting units in large scale and driving some types of devices. To further increase the current/voltage output of direct-current generator, here, we systematically investigate the effects of various conductive polymers and electrodes on the outputs by both computations and experiments. Particularly, the direct-current generator based on Cu/PANI/Ag is found to exhibit overwhelmingly current and voltage outputs over previous ones (current: 800 µA, 4 times larger; voltage: 3.5 V, 5 times larger.) under the same mechanical deformation. The preparation method of electrochemical deposition endows the generators flexibility, the linear relationship of current/voltage output vs. strain applied on the generators, combined with the large outputs offer advantages for the generator to work as flexible sensors. Furthermore, a mechanosensation-active matrix array based on direct-current generator for the strain monitoring demonstrated its promising prospects in flexible electronics. The direct-current generators with improved performance could serve as a stream new blood for versatile sensory systems and human-machine interactive interfaces.


RSC Advances ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 6576-6582 ◽  
Author(s):  
Yang Zhou ◽  
Jian Fang ◽  
Hongxia Wang ◽  
Hua Zhou ◽  
Guilong Yan ◽  
...  

Mechanical-to-electrical energy conversion devices show potential applications in the detection of movements.


2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Kai-Heng Sun ◽  
Wen-Ching Chien ◽  
Hsun-Feng Hsu

AbstractThis work demonstrates the fabrication and characterization of ZnO nanowire-based devices in a metal–nanowire–metal configuration using the direct current dielectrophoresis alignment across Au electrodes. The current–voltage characteristics of the devices revealed that they were rectifying, and the direction of rectification was determined by the direction of current due to the asymmetric Joule heating in the dielectrophoresis alignment process. Joule heating caused the Au atoms to diffuse from the Au electrodes to the inner ZnO NWs and the formation of Schottky contact at the Au/ZnO interface. A fast and sensitive photoresponse was achieved for the rectifying devices in reverse-biased mode due to the carrier injection and photocurrent gain under UV illumination. Such direct current dielectrophoresis alignment of ZnO nanowires is a facile method for fabricating rectification devices with application in sensitive and fast UV detecting sensors.


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


2018 ◽  
Vol 32 (4) ◽  
pp. 182-190 ◽  
Author(s):  
Kenta Matsumura ◽  
Koichi Shimizu ◽  
Peter Rolfe ◽  
Masanori Kakimoto ◽  
Takehiro Yamakoshi

Abstract. Pulse volume (PV) and its related measures, such as modified normalized pulse volume (mNPV), direct-current component (DC), and pulse rate (PR), derived from the finger-photoplethysmogram (FPPG), are useful psychophysiological measures. Although considerable uncertainties exist in finger-photoplethysmography, little is known about the extent of the adverse effects on the measures. In this study, we therefore examined the inter-method reliability of each index across sensor positions and light intensities, which are major disturbance factors of FPPG. From the tips of the index fingers of 12 participants in a resting state, three simultaneous FPPGs having overlapping optical paths were recorded, with their light intensity being changed in three steps. The analysis revealed that the minimum values of three coefficients of Cronbach’s α for ln PV, ln mNPV, ln DC, and PR across positions were .948, .850, .922, and 1.000, respectively, and that those across intensities were .774, .985, .485, and .998, respectively. These findings suggest that ln mNPV and PR can be used for psychophysiological studies irrespective of minor differences in sensor attachment positions and light source intensity, whereas and ln DC can also be used for such studies but under the condition of light intensity being fixed.


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