On the Extraction of Charge Carrier Mobility in High-Mobility Organic Transistors

2015 ◽  
Vol 28 (1) ◽  
pp. 151-155 ◽  
Author(s):  
Takafumi Uemura ◽  
Cedric Rolin ◽  
Tung-Huei Ke ◽  
Pavlo Fesenko ◽  
Jan Genoe ◽  
...  
2019 ◽  
Vol 7 (1) ◽  
pp. 1901824 ◽  
Author(s):  
Hyun Ho Choi ◽  
Hee Taek Yi ◽  
Junto Tsurumi ◽  
Jae Joon Kim ◽  
Alejandro L. Briseno ◽  
...  

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kah Yoong Chan ◽  
Dietmar Knipp ◽  
Reinhard Carius ◽  
Helmut Stiebig

ABSTRACTThe influence of the crystalline volume fraction of hydrogenated microcrystalline silicon (mc-Si:H) on the performance of thin-film transistors (TFTs) processed at temperatures below 180 °C was investigated. TFTs employing mc-Si:H channel material prepared near the transition to amorphous growth exhibit the highest electron charge carrier mobilities exceeding 50 cm2/Vs. The influence of the crystalline volume fraction of the intrinsic mc-Si:H material on the transistor parameters like the charge carrier mobility and the contact resistance will be discussed.


2017 ◽  
Vol 29 (27) ◽  
pp. 1700411 ◽  
Author(s):  
Fengjiao Zhang ◽  
Xiaojuan Dai ◽  
Weikun Zhu ◽  
Hyunjoong Chung ◽  
Ying Diao

2020 ◽  
Vol 30 (20) ◽  
pp. 2070125
Author(s):  
Yong Xu ◽  
Yun Li ◽  
Songlin Li ◽  
Francis Balestra ◽  
Gerard Ghibaudo ◽  
...  

2011 ◽  
Vol 23 (14) ◽  
pp. 1626-1629 ◽  
Author(s):  
Kengo Nakayama ◽  
Yuri Hirose ◽  
Junshi Soeda ◽  
Masahiro Yoshizumi ◽  
Takafumi Uemura ◽  
...  

2019 ◽  
Vol 30 (20) ◽  
pp. 1904508 ◽  
Author(s):  
Yong Xu ◽  
Yun Li ◽  
Songlin Li ◽  
Francis Balestra ◽  
Gerard Ghibaudo ◽  
...  

2017 ◽  
Vol 5 (39) ◽  
pp. 10313-10319 ◽  
Author(s):  
Zachary A. Lamport ◽  
Ruipeng Li ◽  
Chao Wang ◽  
William Mitchell ◽  
David Sparrowe ◽  
...  

Through processing, spin-cast OTFTs outperform single-crystal OFETs by making accessible the high-mobility direction in the same crystal structure.


2018 ◽  
Author(s):  
Francesco Salerno ◽  
Beth Rice ◽  
Julia Schmidt ◽  
Matthew J. Fuchter ◽  
Jenny Nelson ◽  
...  

<p>The properties of an organic semiconductor are dependent on both the chemical structure of the molecule involved, and how it is arranged in the solid-state. It is challenging to extract the influence of each individual factor, as small changes in the molecular structure often dramatically change the crystal packing and hence solid-state structure. Here, we use calculations to explore the influence of the nitrogen position on the charge mobility of a chiral organic molecule when the crystal packing is kept constant. The transfer integrals for a series of enantiopure aza[6]helicene crystals sharing the same packing were analysed in order to identify the best supramolecular motifs to promote charge carrier mobility. The regioisomers considered differ only in the positioning of the nitrogen atom in the aromatic scaffold. The simulations showed that even this small change in the chemical structure has a strong effect on the charge transport in the crystal, leading to differences in charge mobility of up to one order of magnitude. Some aza[6]helicene isomers that were packed interlocked with each other showed high HOMO-HOMO integrals (up to 70 meV), whilst molecules arranged with translational symmetry generally afforded the highest LUMO-LUMO integrals (40 - 70 meV). As many of the results are not intuitively obvious, a computational approach provides additional insight into the design of new semiconducting organic materials.</p>


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