Efficient CH3NH3PbI3Perovskite Solar Cells Employing Nanostructured p-Type NiO Electrode Formed by a Pulsed Laser Deposition

2015 ◽  
Vol 27 (27) ◽  
pp. 4013-4019 ◽  
Author(s):  
Jong Hoon Park ◽  
Jangwon Seo ◽  
Sangman Park ◽  
Seong Sik Shin ◽  
Young Chan Kim ◽  
...  
2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FX02 ◽  
Author(s):  
Koichi Yamamoto ◽  
Hirokazu Okamoto ◽  
Hiroshi Sakakima ◽  
Ryoji Hayashi ◽  
Yohei Ogawa ◽  
...  

2021 ◽  
Vol 6 (2) ◽  
pp. 2000856
Author(s):  
Yury Smirnov ◽  
Laura Schmengler ◽  
Riemer Kuik ◽  
Pierre‐Alexis Repecaud ◽  
Mehrdad Najafi ◽  
...  

2015 ◽  
Vol 141 ◽  
pp. 322-330 ◽  
Author(s):  
Mohammadreza Nematollahi ◽  
Xiaodong Yang ◽  
Lars Martin Sandvik Aas ◽  
Zahra Ghadyani ◽  
Morten Kildemo ◽  
...  

2019 ◽  
Vol 45 (6) ◽  
pp. 7984-7994 ◽  
Author(s):  
Ahmed Alshahrie ◽  
S. Joudakzis ◽  
A.A. Al-Ghamdi ◽  
Lyudmila M. Bronstein ◽  
Waleed E. Mahmoud

2019 ◽  
Vol 15 (34) ◽  
pp. 41-54
Author(s):  
Iqbal S. Naji

The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has obtained for film sintered at 600 °C. The optical band gap was increase from 1.6 eV to 1.65 eV when sintering temperature increased to 300 °C and decrease to 1.45 eV at 600 °C for the films deposited at room temperature. Heat treatment of films has been increased the energy band with increasing sintering temperature. Hall coefficient of Ag2Cu2O4 films have a positive sign which means the charge carrier is a p-type. The electrical conductivity decreases with increasing of the sintering temperature for as deposited and annealed films.


2015 ◽  
Vol 25 (27) ◽  
pp. 4321-4327 ◽  
Author(s):  
Sylvio Schubert ◽  
Florian Schmidt ◽  
Holger von Wenckstern ◽  
Marius Grundmann ◽  
Karl Leo ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (78) ◽  
pp. 41294-41300 ◽  
Author(s):  
Y. S. Zou ◽  
H. P. Wang ◽  
S. L. Zhang ◽  
D. Lou ◽  
Y. H. Dong ◽  
...  

P-type Mg doped CuAlO2 films with high crystallinity are prepared by pulsed laser deposition followed by annealing, and exhibit enhanced conductivity and tunable optical band gaps.


1995 ◽  
Vol 388 ◽  
Author(s):  
W. P. Shen ◽  
H. S. Kwok

AbstractIn this paper the results on p-type ZnS, ZnSe, CdS and CdSe thin films grown by pulsed laser deposition will be discussed. these films were deposited on GaAs substrates. Li-doping has been shown to be effective in producing p-type II-VI thin films, while in-doping is excellent for n-type CdS and CdSe thin films. No post-annealing process was used. these preliminary results suggest a possible new approach through pulsed laser deposition to solve the doping problem of II-VI compound semiconductors.


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