scholarly journals Thin Film Transistors: All-Solution-Processed Transparent Thin Film Transistor and Its Application to Liquid Crystals Driving (Adv. Mater. 23/2013)

2013 ◽  
Vol 25 (23) ◽  
pp. 3137-3137 ◽  
Author(s):  
Kwang-Ho Lee ◽  
Sang-Mook Kim ◽  
Huisu Jeong ◽  
Yusin Pak ◽  
Hui Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Liquid Crystals ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Solution Processed ◽  
Transparent Thin Film Transistor

All-Solution-Processed Transparent Thin Film Transistor and Its Application to Liquid Crystals Driving

2013 ◽  
Vol 25 (23) ◽  
pp. 3209-3214 ◽  
Author(s):  
Kwang-Ho Lee ◽  
Sang-Mook Kim ◽  
Huisu Jeong ◽  
Yusin Pak ◽  
Hui Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Liquid Crystals ◽  
Thin Film Transistor ◽  
Solution Processed ◽  
Transparent Thin Film Transistor

scholarly journals Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52517-52523 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Jian-Hua Zhang
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Solution Processed ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Bias Stability

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

The synthesis of anthradithiophene-based liquid crystals and their applications in organic thin film transistors

2016 ◽  
Vol 4 (12) ◽  
pp. 2284-2288 ◽  
Author(s):  
Wei-Lung Liau ◽  
Tien-Hsin Lee ◽  
Jiun-Tai Chen ◽  
Chain-Shu Hsu
Keyword(s):  
Thin Film ◽  
Liquid Crystals ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

High mobility organic thin film transistor (OTFT) devices using anthradithiophene-based organic semiconductors have been developed.

Performance modification in solution-processed SnZnO thin film transistor

2010 ◽  
Vol 1247 ◽  
Author(s):  
Dong Lim Kim ◽  
Doo Na Kim ◽  
You Seung Rim ◽  
Si Joon Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Annealing Temperature ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Molar Ratio ◽  
Electrical Characteristics ◽  
Solution Processed

AbstractTin zinc oxide (SnZnO) thin film transistors (TFTs) with different component fraction fabricated by solution process were reported. Sn chloride and Zn acetate were used as precursor and the maximum annealing temperature was 500°C. The electrical characteristics of TFTs were acutely affected by the molar ratio between Sn and Zn in the lattice, and showed the highest mobility and on-to-off ratio of about 17 cm2/Vs and 2×106, respectively. The origins of the high performance were traced through both structural and electrical aspects. Sn was generally considered to offer carrier path by superposition of s orbital, but it was found that the increase of Sn fraction only below specific value in lattice contributed to increase mobility, which could be explained by the structural distortion and the defect generation. Zn atoms introduced in the lattice were necessary to control both mobility and carrier concentration. From these results, the solution-processed SnZnO TFT with high performance was suggested.

scholarly journals Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors

RSC Advances ◽  
2020 ◽  
Vol 10 (43) ◽  
pp. 25540-25546
Author(s):  
Fei Cheng ◽  
Emanuele Verrelli ◽  
Fahad A. Alharthi ◽  
Satyajit Das ◽  
Thomas D. Anthopoulos ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Tio2 Nanorods ◽  
Solution Processed ◽  
Dielectric Layers ◽  
Solution Processable

A prototype solution-processed n-type thin film transistor was fabricated. The film incorporates a dielectric layer prepared from solution-processed and photopolymerised inorganic/organic TiO2 nanorods and zinc oxide as the semiconductor, also deposited from solution.

scholarly journals Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

2014 ◽  
Vol 115 (21) ◽  
pp. 214501 ◽  
Author(s):  
Mohammed Benwadih ◽  
J. A. Chroboczek ◽  
Gérard Ghibaudo ◽  
Romain Coppard ◽  
Dominique Vuillaume
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Trap Density ◽  
Solution Processed

Investigation of solution-processed amorphous SrInZnO thin film transistors

2011 ◽  
Vol 326 (1) ◽  
pp. 171-174 ◽  
Author(s):  
Doo Hyun Yoon ◽  
Si Joon Kim ◽  
Woong Hee Jeong ◽  
Dong Lim Kim ◽  
You Seung Rim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Solution Processed

Low-temperature solution-processed InGaZnO thin film transistors by using lightwave-derived annealing

2021 ◽  
Vol 723 ◽  
pp. 138594
Author(s):  
Qian Zhang ◽  
Cheng Ruan ◽  
Guodong Xia ◽  
Hongyu Gong ◽  
Sumei Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Temperature Solution
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