Metal-Containing Block Copolymer Thin Films Yield Wire Grid Polarizers with High Aspect Ratio

2013 ◽  
Vol 26 (5) ◽  
pp. 791-795 ◽  
Author(s):  
So Youn Kim ◽  
Jessica Gwyther ◽  
Ian Manners ◽  
Paul M. Chaikin ◽  
Richard A. Register
Keyword(s):  
Thin Films ◽  
Block Copolymer ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Wire Grid

scholarly journals Atomic Layer Deposition of GdCoO3 and Gd0.9Ca0.1CoO3

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 24
Author(s):  
Marion Duparc ◽  
Henrik Hovde Sønsteby ◽  
Ola Nilsen ◽  
Anja Olafsen Sjåstad ◽  
Helmer Fjellvåg
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
High Surface ◽  
High Surface Area ◽  
Atomic Layer ◽  
Oxidation Catalysis ◽  
Post Annealing ◽  
Layer Deposition

Thin films of the catalytically interesting ternary and quaternary perovskites GdCoO3 and Gd0.9Ca0.1CoO3 are fabricated by atomic layer deposition using metal β-diketonates and ozone as precursors. The resulting thin films are amorphous as deposited and become single-oriented crystalline on LaAlO3(100) and YAlO3(100/010) after post-annealing at 650 °C in air. The crystal orientations of the films are tunable by choice and the orientation of the substrate, mitigated through the interface via solid face epitaxy upon annealing. The films exhibit no sign of Co2+. Additionally, high-aspect-ratio Si(100) substrates were used to document the suitability of the developed process for the preparation of coatings on more complex, high-surface-area structures. We believe that coatings of GdCoO3 and Gd1−xCaxCoO3 may find applications within oxidation catalysis.

High aspect ratio deep UV wire grid polarizer fabricated by double patterning

2012 ◽  
Vol 98 ◽  
pp. 433-435 ◽  
Author(s):  
T. Weber ◽  
T. Käsebier ◽  
A. Szeghalmi ◽  
M. Knez ◽  
E.-B. Kley ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Wire Grid ◽  
Deep Uv ◽  
Double Patterning ◽  
Wire Grid Polarizer

The Accuracy of Micro-molds Produced by a UV Laser Induced Polymerization

1994 ◽  
Vol 116 (3) ◽  
pp. 370-376 ◽  
Author(s):  
K. Yamaguchi ◽  
T. Nakamoto ◽  
P. A. Abbay ◽  
S. Mibu
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
Laser Beam ◽  
High Aspect Ratio ◽  
Research Work ◽  
Practical Method ◽  
High Accuracy ◽  
Uv Laser ◽  
Ultraviolet Laser ◽  
Absorption Of Light

This research work deals with the development of a simple and practical method for manufacturing metallic micromachine parts on the order of 0.01–1.0 mm in size. In this method, an ultraviolet laser beam is irradiated onto the surface of a liquid photopolymer material through a mask. The irradiated pattern is then developed to produce a solidified photopolymer mold. Finally, the metallic part is made by an electroforming process. This paper deals with the first process, the making of the photopolymer mold. At first, the accuracy of the mold is estimated by applying the theories of diffraction and absorption of light. Next, the accuracy is examined experimentally. The results show an accuracy of ± 1 μm can be obtained when a proximity transfer of 10 μm between the mask and the photopolymer surface is used. By stacking thin films, thick and high aspect ratio molds with a reasonably high accuracy are made.

Polypyrrole Nanowire Array with High Aspect Ratio Fabricated by Block-Copolymer-Templated Electropolymerization

2011 ◽  
Vol 1312 ◽  
Author(s):  
Hideaki Komiyama ◽  
Tomokazu Iyoda ◽  
Kaori Kamata
Keyword(s):  
Thin Film ◽  
Block Copolymer ◽  
Aspect Ratio ◽  
Polymer Film ◽  
High Aspect Ratio ◽  
Mixed Solvent ◽  
Nanowire Array ◽  
Selective Removal ◽  
Ito Electrode ◽  
Conducting Polypyrrole

ABSTRACTConducting polypyrrole (PPy) nanowire array was electrochemically fabricated by using microphase-separated block copolymer (PEOm-b-PMA(Az)n) thin film as an electrode template. Electropolymerization proceeds selectively through the perpendiculary oriented PEO nanocylindrical microdomains on an ITO electrode coated by the above polymer film. The length of the PPy nanowires was controllable in range of 10-120 nm by the thickness of the coated template film and the amount of passed charge. A 10 nm of diameter, 27 nm of periodicity, and 12 of aspect ratio of the crystalline PPy nanowires were successfully achieved. Selective removal of the template is also achieved simply by rinsing with solubility-controlled mixed solvent.

Densely Packed Arrays of Ultra-High-Aspect-Ratio Silicon Nanowires Fabricated using Block-Copolymer Lithography and Metal-Assisted Etching

2009 ◽  
Vol 19 (15) ◽  
pp. 2495-2500 ◽  
Author(s):  
Shih-Wei Chang ◽  
Vivian P. Chuang ◽  
Steven T. Boles ◽  
Caroline A. Ross ◽  
Carl V. Thompson
Keyword(s):  
Block Copolymer ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Block Copolymer Lithography ◽  
Copolymer Lithography

scholarly journals ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 1035 ◽  
Author(s):  
Alireza M. Kia ◽  
Nora Haufe ◽  
Sajjad Esmaeili ◽  
Clemens Mart ◽  
Mikko Utriainen ◽  
...  
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
3D Analysis ◽  
Tof Sims ◽  
Before And After ◽  
Sims Analysis

For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample’s surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO2 thin films.

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