Carbon-Nanotube-Enabled Vertical Field Effect and Light-Emitting Transistors

2008 ◽  
Vol 20 (19) ◽  
pp. 3605-3609 ◽  
Author(s):  
Bo Liu ◽  
Mitchell A. McCarthy ◽  
Youngki Yoon ◽  
Do Young Kim ◽  
Zhuangchun Wu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Light Emitting ◽  
Vertical Field ◽  
Light Emitting Transistors ◽  
Vertical Field Effect

Application of graphene vertical field effect to regulation of organic light-emitting transistors

2020 ◽  
Vol 29 (5) ◽  
pp. 057401
Author(s):  
Hang Song ◽  
Hao Wu ◽  
Hai-Yang Lu ◽  
Zhi-Hao Yang ◽  
Long Ba
Keyword(s):  
Field Effect ◽  
Light Emitting ◽  
Organic Light ◽  
Vertical Field ◽  
Light Emitting Transistors ◽  
Vertical Field Effect

N-channel carbon nanotube enabled vertical field effect transistors with solution deposited ZnO nanoparticle based channel layers

2012 ◽  
Vol 100 (17) ◽  
pp. 173514 ◽  
Author(s):  
Po-Hsiang Wang ◽  
Bo Liu ◽  
Yu Shen ◽  
Ying Zheng ◽  
Mitchell A. McCarthy ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanoparticle ◽  
Vertical Field ◽  
Vertical Field Effect

Reorientation of the High Mobility Plane in Pentacene-Based Carbon Nanotube Enabled Vertical Field Effect Transistors

ACS Nano ◽  
2010 ◽  
Vol 5 (1) ◽  
pp. 291-298 ◽  
Author(s):  
Mitchell A. McCarthy ◽  
Bo Liu ◽  
Ramesh Jayaraman ◽  
Stephen M. Gilbert ◽  
Do Young Kim ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Vertical Field ◽  
Vertical Field Effect

High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (35) ◽  
pp. 18371-18378 ◽  
Author(s):  
Haikuo Gao ◽  
Jinyu Liu ◽  
Zhengsheng Qin ◽  
Tianyu Wang ◽  
Can Gao ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optoelectronic Devices ◽  
Light Emitting ◽  
Vertical Field ◽  
Organic Optoelectronic Devices ◽  
Organic Optoelectronic ◽  
Vertical Field Effect

Two kinds of vertical organic optoelectronic devices were constructed based on amorphous organic semiconductors and high device performances were achieved.

Correlation Between On/Off Ratio and Electron Traps in Hole-Only Carbon-Nanotube-Enabled Vertical Field Effect Transistors

2009 ◽  
Vol 1154 ◽  
Author(s):  
Mitchell Austin McCarthy ◽  
Bo Liu ◽  
Andrew Gabriel Rinzler
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Strong Dependence ◽  
Relative Number ◽  
Charge Trapping ◽  
Electron Traps ◽  
Vertical Field ◽  
Vertical Field Effect ◽  
Future Work

AbstractSingle wall carbon nanotube enabled vertical field effect transistors (VFETs) are studied and the dependence of the on/off ratio on the relative number of electron traps is investigated. Current versus voltage measurements on several VFETs with varying interfacial trap densities in the vicinity of the nanotube network/polymer active layer junction are taken. It is found that the on/off ratio of the VFET changes from 1600 to 20 for typical operational currents as the onset gate voltage in the off-to-on transfer curve shifts from 94 V to 72 V. Such a strong dependence on trapped charge motivates future work to uncover the mechanism of charge trapping.

scholarly journals Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

Electronics ◽  
2019 ◽  
Vol 8 (2) ◽  
pp. 241 ◽  
Author(s):  
Huolin Huang ◽  
Feiyu Li ◽  
Zhonghao Sun ◽  
Nan Sun ◽  
Feng Zhang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Blocking Layer ◽  
Vertical Field ◽  
Current Blocking Layer ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor ◽  
Current Blocking

A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include the realization of normally off operation and the improvement of high breakdown voltage (BV) characteristics. In this work, a trenched-gate scheme is employed to realize the normally off VFET. Meanwhile, an additional back current blocking layer (BCBL) is proposed and inserted into the GaN normally off VFET to improve the device performance. The electrical characteristics of the proposed device (called BCBL-VFET) are investigated systematically and the structural parameters are optimized through theoretical calculations and TCAD simulations. We demonstrate that the BCBL-VFET exhibits a normally off operation with a large positive threshold voltage of 3.5 V and an obviously increased BV of 1800 V owing to the uniform electric field distribution achieved around the gate region. However, the device only shows a small degradation of on-resistance (RON). The proposed scheme provides a useful reference for engineers in device fabrication work and will be promising for the applications of power electronics.

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