Organic Single-Crystalline Ribbons of a Rigid “H”-type Anthracene Derivative and High-Performance, Short-Channel Field-Effect Transistors of Individual Micro/Nanometer-Sized Ribbons Fabricated by an “Organic Ribbon Mask” Technique

2008 ◽  
Vol 20 (14) ◽  
pp. 2735-2740 ◽  
Author(s):  
Lang Jiang ◽  
Jianhua Gao ◽  
Erjing Wang ◽  
Hongxiang Li ◽  
Zhaohui Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Short Channel ◽  
Single Crystalline ◽  
Anthracene Derivative

Self-Assembled Organic Single Crystalline Nanosheet for Solution Processed High-Performance n-Channel Field-Effect Transistors

2016 ◽  
Vol 28 (28) ◽  
pp. 6011-6015 ◽  
Author(s):  
Jin Hong Kim ◽  
Sang Kyu Park ◽  
Jong H. Kim ◽  
Dong Ryeol Whang ◽  
Won Sik Yoon ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Single Crystalline ◽  
Self Assembled

scholarly journals Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

2011 ◽  
Vol 2011 ◽  
pp. 1-16 ◽  
Author(s):  
Jianshi Tang ◽  
Chiu-Yen Wang ◽  
Faxian Xiu ◽  
Yi Zhou ◽  
Lih-Juann Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Field Effect ◽  
High Performance ◽  
Lattice Mismatch ◽  
Field Effect Transistors ◽  
Single Crystalline ◽  
Nanowire Transistors ◽  
Nanowire Heterostructures

We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studied the effect of oxide confinement during the formation of nickel germanides in a Ge nanowire. In contrast to the formation of Ni2Ge/Ge/Ni2Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni2Ge with the confinement of Al2O3during annealing. A twisted epitaxial growth mode was observed in both two Ge nanowire heterostructures to accommodate the large lattice mismatch in the NixGe/Ge interface. Moreover, we have demonstrated field-effect transistors using the nickel germanide regions as source/drain contacts to the Ge nanowire channel. Our Ge nanowire transistors have shown a high-performancep-type behavior with a high on/off ratio of 105and a field-effect hole mobility of 210 cm2/Vs, which showed a significant improvement compared with that from unreacted Ge nanowire transistors.

High performance single-crystalline organic field-effect transistors based on molecular-modified dibenzo[a,e]pentalenes derivatives

2020 ◽  
Vol 44 (40) ◽  
pp. 17552-17557
Author(s):  
Fan Yin ◽  
Long Wang ◽  
Xiankai Yang ◽  
Meihui Liu ◽  
Hua Geng ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Single Crystalline

Modulating the charge transport properties realized by a controllable molecular structure resulted in different packing arrangements.

scholarly journals High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

2019 ◽  
Vol 7 ◽  
pp. 82-87 ◽  
Author(s):  
Zeyang Ren ◽  
Wanjiao Chen ◽  
Jinfeng Zhang ◽  
Jincheng Zhang ◽  
Chunfu Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Single Crystalline

scholarly journals Organic Single-Crystalline p–n Heterojunctions for High-Performance Ambipolar Field-Effect Transistors and Broadband Photodetectors

2018 ◽  
Vol 10 (49) ◽  
pp. 42715-42722 ◽  
Author(s):  
Xiaoming Zhao ◽  
Tianjun Liu ◽  
Hongli Liu ◽  
Shirong Wang ◽  
Xianggao Li ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Single Crystalline

High-Performance Air-Stable Bipolar Field-Effect Transistors of Organic Single-Crystalline Ribbons with an Air-Gap Dielectric

2008 ◽  
Vol 20 (8) ◽  
pp. 1511-1515 ◽  
Author(s):  
Qingxin Tang ◽  
Yanhong Tong ◽  
Hongxiang Li ◽  
Zhuoyu Ji ◽  
Liqiang Li ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Air Gap ◽  
Single Crystalline

High-performance organic field-effect transistors based on single-crystalline microribbons of a two-dimensional fused heteroarene semiconductor

2015 ◽  
Vol 51 (60) ◽  
pp. 11961-11963 ◽  
Author(s):  
Yingfeng Wang ◽  
Sufen Zou ◽  
Jianhua Gao ◽  
Huarong Zhang ◽  
Guoqiao Lai ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Organic Field Effect Transistors ◽  
Single Crystalline

A remarkable high mobility of 17.9 cm2V−1s−1was obtained for single-crystalline OFET based on 2D molecule BTBTTBT microribbons.

High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO2layer by flash lamp annealing

2014 ◽  
Vol 7 (5) ◽  
pp. 056501 ◽  
Author(s):  
Koji Usuda ◽  
Yoshiki Kamata ◽  
Yuuichi Kamimuta ◽  
Takahiro Mori ◽  
Masahiro Koike ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flash Lamp ◽  
Short Channel
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