High-Performance Air-Stable Bipolar Field-Effect Transistors of Organic Single-Crystalline Ribbons with an Air-Gap Dielectric

2008 ◽  
Vol 20 (8) ◽  
pp. 1511-1515 ◽  
Author(s):  
Qingxin Tang ◽  
Yanhong Tong ◽  
Hongxiang Li ◽  
Zhuoyu Ji ◽  
Liqiang Li ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Air Gap ◽  
Single Crystalline

Self-Assembled Organic Single Crystalline Nanosheet for Solution Processed High-Performance n-Channel Field-Effect Transistors

2016 ◽  
Vol 28 (28) ◽  
pp. 6011-6015 ◽  
Author(s):  
Jin Hong Kim ◽  
Sang Kyu Park ◽  
Jong H. Kim ◽  
Dong Ryeol Whang ◽  
Won Sik Yoon ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Single Crystalline ◽  
Self Assembled

scholarly journals Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

2011 ◽  
Vol 2011 ◽  
pp. 1-16 ◽  
Author(s):  
Jianshi Tang ◽  
Chiu-Yen Wang ◽  
Faxian Xiu ◽  
Yi Zhou ◽  
Lih-Juann Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Field Effect ◽  
High Performance ◽  
Lattice Mismatch ◽  
Field Effect Transistors ◽  
Single Crystalline ◽  
Nanowire Transistors ◽  
Nanowire Heterostructures

We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studied the effect of oxide confinement during the formation of nickel germanides in a Ge nanowire. In contrast to the formation of Ni2Ge/Ge/Ni2Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni2Ge with the confinement of Al2O3during annealing. A twisted epitaxial growth mode was observed in both two Ge nanowire heterostructures to accommodate the large lattice mismatch in the NixGe/Ge interface. Moreover, we have demonstrated field-effect transistors using the nickel germanide regions as source/drain contacts to the Ge nanowire channel. Our Ge nanowire transistors have shown a high-performancep-type behavior with a high on/off ratio of 105and a field-effect hole mobility of 210 cm2/Vs, which showed a significant improvement compared with that from unreacted Ge nanowire transistors.

High performance single-crystalline organic field-effect transistors based on molecular-modified dibenzo[a,e]pentalenes derivatives

2020 ◽  
Vol 44 (40) ◽  
pp. 17552-17557
Author(s):  
Fan Yin ◽  
Long Wang ◽  
Xiankai Yang ◽  
Meihui Liu ◽  
Hua Geng ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Single Crystalline

Modulating the charge transport properties realized by a controllable molecular structure resulted in different packing arrangements.

scholarly journals High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

2019 ◽  
Vol 7 ◽  
pp. 82-87 ◽  
Author(s):  
Zeyang Ren ◽  
Wanjiao Chen ◽  
Jinfeng Zhang ◽  
Jincheng Zhang ◽  
Chunfu Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Single Crystalline

scholarly journals Organic Single-Crystalline p–n Heterojunctions for High-Performance Ambipolar Field-Effect Transistors and Broadband Photodetectors

2018 ◽  
Vol 10 (49) ◽  
pp. 42715-42722 ◽  
Author(s):  
Xiaoming Zhao ◽  
Tianjun Liu ◽  
Hongli Liu ◽  
Shirong Wang ◽  
Xianggao Li ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Single Crystalline

High-performance n- and p-type organic single-crystal field-effect transistors with an air-gap dielectric towards anti-ambipolar transport

2020 ◽  
Vol 8 (13) ◽  
pp. 4303-4308 ◽  
Author(s):  
Jianghong Liu ◽  
Jie Liu ◽  
Jing Zhang ◽  
Chunlei Li ◽  
Qiuhong Cui ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Air Gap ◽  
Crystal Field Effect ◽  
Organic Single Crystal ◽  
P Type ◽  
Ambipolar Transport

By combining high-performance n- and p-type single crystals with an air-gap dielectric, excellent anti-ambipolar transport with a small hysteresis was achieved.

High-performance organic field-effect transistors based on single-crystalline microribbons of a two-dimensional fused heteroarene semiconductor

2015 ◽  
Vol 51 (60) ◽  
pp. 11961-11963 ◽  
Author(s):  
Yingfeng Wang ◽  
Sufen Zou ◽  
Jianhua Gao ◽  
Huarong Zhang ◽  
Guoqiao Lai ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Organic Field Effect Transistors ◽  
Single Crystalline

A remarkable high mobility of 17.9 cm2V−1s−1was obtained for single-crystalline OFET based on 2D molecule BTBTTBT microribbons.

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

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