Barrier-Free Electron–Hole Capture in Polymer Blend Heterojunction Light-Emitting Diodes

2003 ◽  
Vol 15 (20) ◽  
pp. 1708-1712 ◽  
Author(s):  
A.C. Morteani ◽  
A.S. Dhoot ◽  
J.-S. Kim ◽  
C. Silva ◽  
N.C. Greenham ◽  
...  
2018 ◽  
Vol 28 (8) ◽  
pp. 1705903 ◽  
Author(s):  
Muhammad Umair Hassan ◽  
Yee-Chen Liu ◽  
Ali K. Yetisen ◽  
Haider Butt ◽  
Richard Henry Friend

2013 ◽  
Vol 328 ◽  
pp. 845-849
Author(s):  
Seong Jun Kim ◽  
Chel Jong Choi ◽  
Hyun Soo Kim

A dip-shaped InGaN/GaN quantum well (QW) structure was computed to design efficient light-emitting diodes (LEDs). The advanced LEDs designed with the dip-shaped QW structures exhibited higher internal quantum efficiency by 26 % and the lower temperature-driven efficiency droop as compared to the reference LEDs. This could be due to the enhanced radiative recombination rate in the QW active region, which is associated with the reduced spatial separation of electron-hole wave functions.


2005 ◽  
Vol 871 ◽  
Author(s):  
Noriyuki Takada ◽  
Kiyohiko Tsutsumi ◽  
Toshihide Kamata

AbstractThe spectral imaging for electroluminescence (EL) characterization in the light emitting diode (LED) based on blends of poly[2,7-(9,9-di-n-octylfluorene)] (PFO) and poly[2,7-(9,9-di-n-octylfluorene)-alt-(1,4-phenylene-((4-sec-butylphenyl)amino)-1,4-phenylene) ] (TFB) was performed using the two dimensional imaging micro-spectroscopy system. We found that EL spectral images varied with increasing applied voltages. The origin for such variation of EL spectral images will be discussed in this report.


Nano Energy ◽  
2016 ◽  
Vol 21 ◽  
pp. 62-70 ◽  
Author(s):  
M.U. Hassan ◽  
Yee-Chen Liu ◽  
Kamran ul Hasan ◽  
H. Butt ◽  
Jui-Fen Chang ◽  
...  

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