Submicrometer Functionalization of Porous Silicon by Electron Beam Lithography

2003 ◽  
Vol 15 (17) ◽  
pp. 1465-1469 ◽  
Author(s):  
M. Rocchia ◽  
S. Borini ◽  
A.M. Rossi ◽  
L. Boarino ◽  
G. Amato
Keyword(s):  
Electron Beam ◽  
Porous Silicon ◽  
Electron Beam Lithography

Grating Coupled Waveguide Biosensor Based on Porous Silicon

2011 ◽  
Vol 1301 ◽  
Author(s):  
Xing Wei ◽  
Sharon M. Weiss
Keyword(s):  
Electron Beam ◽  
Porous Silicon ◽  
Nucleic Acids ◽  
Surface Area ◽  
Small Molecule ◽  
Electron Beam Lithography ◽  
Low Cost ◽  
Grating Couplers ◽  
Silicon Waveguides ◽  
A New Technique

ABSTRACTPorous silicon waveguides with integrated porous silicon grating couplers are demonstrated as small molecule biosensors. Two fabrication methods are presented for the grating couplers: standard electron beam lithography with reactive ion etching and a new technique based on direct imprinting of porous substrates. Although the gratings fabricated using standard lithographic techniques have steeper sidewalls and enable a larger available sensing surface area inside the waveguide, the imprinted gratings have the advantage of rapid and low-cost fabrication. Both the lithographically and imprinted sensors are shown to have waveguide losses on the order of 10 dB/cm, and both are demonstrated for detection of 16mer nucleic acids.

NbN superconducting nanonetwork fabricated using porous silicon templates and high-resolution electron beam lithography

2017 ◽  
Vol 28 (46) ◽  
pp. 465301 ◽  
Author(s):  
M Salvato ◽  
R Baghdadi ◽  
C Cirillo ◽  
S L Prischepa ◽  
A L Dolgiy ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Porous Silicon ◽  
Electron Beam Lithography ◽  
Resolution Electron

Patterning of Porous Silicon by Electron-Beam Lithography

2003 ◽  
Vol 150 (5) ◽  
pp. G311 ◽  
Author(s):  
S. Borini ◽  
A. M. Rossi ◽  
L. Boarino ◽  
G. Amato
Keyword(s):  
Electron Beam ◽  
Porous Silicon ◽  
Electron Beam Lithography

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction

Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Lithography Process

scholarly journals Nanooptical elements for visual verification

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alexander Goncharsky ◽  
Anton Goncharsky ◽  
Dmitry Melnik ◽  
Svyatoslav Durlevich
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Mass Production ◽  
Optical Element ◽  
Visual Image ◽  
Zero Order ◽  
Diffractive Optical Elements ◽  
Optical Elements ◽  
Standard Equipment ◽  
Diffractive Element

AbstractThis paper focuses on the development of flat diffractive optical elements (DOEs) for protecting banknotes, documents, plastic cards, and securities against counterfeiting. A DOE is a flat diffractive element whose microrelief, when illuminated by white light, forms a visual image consisting of several symbols (digits or letters), which move across the optical element when tilted. The images formed by these elements are asymmetric with respect to the zero order. To form these images, the microrelief of a DOE must itself be asymmetric. The microrelief has a depth of ~ 0.3 microns and is shaped with an accuracy of ~ 10–15 nm using electron-beam lithography. The DOEs developed in this work are securely protected against counterfeiting and can be replicated hundreds of millions of times using standard equipment meant for the mass production of relief holograms.

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