scholarly journals Transition Metal Dichalcogenides: Atomic Vacancy Control and Elemental Substitution in a Monolayer Molybdenum Disulfide for High Performance Optoelectronic Device Arrays (Adv. Funct. Mater. 11/2020)

2020 ◽  
Vol 30 (11) ◽  
pp. 2070073
Author(s):  
Sang‐Soo Chee ◽  
Won‐June Lee ◽  
Yong‐Ryun Jo ◽  
Min Kyung Cho ◽  
DongWon Chun ◽  
...  
2020 ◽  
Vol 30 (11) ◽  
pp. 1908147 ◽  
Author(s):  
Sang‐Soo Chee ◽  
Won‐June Lee ◽  
Yong‐Ryun Jo ◽  
Min Kyung Cho ◽  
DongWon Chun ◽  
...  

Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...


Author(s):  
Alwin Daus ◽  
Sam Vaziri ◽  
Victoria Chen ◽  
Çağıl Köroğlu ◽  
Ryan W. Grady ◽  
...  

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.


2019 ◽  
Vol 55 (60) ◽  
pp. 8772-8775 ◽  
Author(s):  
Manish K. Jaiswal ◽  
Kanwar Abhay Singh ◽  
Giriraj Lokhande ◽  
Akhilesh K. Gaharwar

We report the synthesis of superhydrophobic two-dimensional (2D) transition metal dichalcogenides by modulation of the degree of atomic defects. The presence of atomic vacancies in 2D molybdenum disulfide (MoS2) nanoassemblies dictated hydrophilic-to-hydrophobic transition and subsequent cell adhesion.


RSC Advances ◽  
2019 ◽  
Vol 9 (34) ◽  
pp. 19707-19711 ◽  
Author(s):  
Min-A Kang ◽  
Seongjun Kim ◽  
In-Su Jeon ◽  
Yi Rang Lim ◽  
Chong-Yun Park ◽  
...  

Two-dimensional transition metal dichalcogenides (TMDs) such as molybdenum disulfide, have recently attracted attention for their applicability as building blocks for fabricating advanced functional materials.


RSC Advances ◽  
2020 ◽  
Vol 10 (51) ◽  
pp. 30529-30602 ◽  
Author(s):  
Hari Singh Nalwa

Two-dimensional transition metal dichalcogenides have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures with other nanomaterials.


2017 ◽  
Vol 5 (29) ◽  
pp. 14950-14968 ◽  
Author(s):  
Gi Woong Shim ◽  
Woonggi Hong ◽  
Sang Yoon Yang ◽  
Sung-Yool Choi

This review provides insights for the design of synthetic schemes and catalytic systems of CVD-grown functional TMDs for high performance HER applications.


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