Halide Double‐Perovskite Light‐Emitting Centers Embedded in Lattice‐Matched and Coherent Crystalline Matrix

2020 ◽  
Vol 30 (17) ◽  
pp. 2000653 ◽  
Author(s):  
Chen‐Min Dai ◽  
Tao Zhang ◽  
Yu‐Ning Wu ◽  
Shiyou Chen
Keyword(s):  
Double Perovskite ◽  
Light Emitting ◽  
Lattice Matched ◽  
Crystalline Matrix

Growth and Characterization of AllnGaN/InGaN Heterostructures

1996 ◽  
Vol 423 ◽  
Author(s):  
J. C. Roberts ◽  
F. G. Mcintosh ◽  
M. Aumer ◽  
V. Joshkin ◽  
K. S. Boutros ◽  
...  
Keyword(s):  
High Performance ◽  
Visible Spectrum ◽  
Growth Conditions ◽  
Light Emitting ◽  
Mocvd Growth ◽  
Near Ultraviolet ◽  
Active Layers ◽  
Double Heterostructures ◽  
Lattice Matched

AbstractThe emission wavelength of the InxGa1−xN ternary system can span from the near ultraviolet through red regions of the visible spectrum. High quality double heterostructures with these InxGa1−xN active layers are essential in the development of efficient optoelectronic devices such as high performance light emitting diodes and laser diodes. We will report on the MOCVD growth and characterization of thick and thin InGaN films. Thick InxGa1−xN films with values of x up to 0.40 have been deposited and their photoluminescence (PL) spectra measured. AlGaN/InGaN/AlGaN double heterostructures (DHs) have been grown that exhibit PL emission in the violet, blue, green and yellow spectral regions, depending on the growth conditions of the thin InGaN active layer. Preliminary results of an AllnGaN/InGaN/AllnGaN DH, with the potential of realizing a near-lattice matched structure, will also be presented.

Advances in Bulk Crystal Growth of AlN and GaN

MRS Bulletin ◽  
2009 ◽  
Vol 34 (4) ◽  
pp. 259-265 ◽  
Author(s):  
Dirk Ehrentraut ◽  
Zlatko Sitar
Keyword(s):  
Radius Of Curvature ◽  
Light Emitting ◽  
Bulk Crystal Growth ◽  
Light Emitting Devices ◽  
Large Size ◽  
Device Structures ◽  
Liquid Solutions ◽  
Current Growth ◽  
Lattice Matched ◽  
High Equilibrium

AbstractAluminum nitride (AlN) and gallium nitride (GaN) play an essential role in modern electronics, particularly in optoelectronics. Highly efficient light-emitting devices covering the ultraviolet to green spectral region are fabricated from these materials. Despite all efforts, the growth of large-size and high-quality AlN and GaN crystals for substrates, which are thermally and lattice-matched to the AlGaN-based device structures, is still in its infancy. This is due to the high equilibrium vapor pressure of nitrogen above these compounds, which requires growth techniques employing either the vapor phase or liquid solutions. The best commercially available GaN substrates show a high dislocation density of >105 per cm2 and strong bowing with a radius of curvature smaller than 10 m. This article reviews current growth techniques that look promising and may become commercially viable.

Ultrastable Lead-Free Double Perovskite Warm-White Light-Emitting Devices with a Lifetime above 1000 Hours

2020 ◽  
Vol 12 (41) ◽  
pp. 46330-46339
Author(s):  
Sen Li ◽  
Zhifeng Shi ◽  
Fei Zhang ◽  
Lintao Wang ◽  
Zhuangzhuang Ma ◽  
...  
Keyword(s):  
White Light ◽  
Double Perovskite ◽  
Lead Free ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Warm White Light

Operation of Monolithically-Integrated Digital Circuits with Light Emitting Diodes Fabricated in Lattice-Matched Si/III–V–N/Si Heterostructure

2010 ◽  
Vol 3 (7) ◽  
pp. 074201 ◽  
Author(s):  
Keisuke Yamane ◽  
Kenta Noguchi ◽  
Seizo Tanaka ◽  
Yuzo Furukawa ◽  
Hiroshi Okada ◽  
...  
Keyword(s):  
Digital Circuits ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Monolithically Integrated ◽  
Lattice Matched
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