scholarly journals Threshold Switching: Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications (Adv. Funct. Mater. 6/2018)

2018 ◽  
Vol 28 (6) ◽  
pp. 1870036 ◽  
Author(s):  
Zhongrui Wang ◽  
Mingyi Rao ◽  
Rivu Midya ◽  
Saumil Joshi ◽  
Hao Jiang ◽  
...  
Keyword(s):  
Threshold Switching ◽  
Switching Threshold

scholarly journals Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

2019 ◽  
Vol 30 (21) ◽  
pp. 215201 ◽  
Author(s):  
Xuanqi Huang ◽  
Runchen Fang ◽  
Chen Yang ◽  
Kai Fu ◽  
Houqiang Fu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Steep Slope ◽  
Switching Device ◽  
Gan Hemt ◽  
Threshold Switching

Compact and ultrafast all optical 1-bit comparator based on wave interference and threshold switching methods

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Asghar Askarian
Keyword(s):  
Finite Difference Time Domain ◽  
Contrast Ratio ◽  
Logical Structure ◽  
Ring Resonators ◽  
Plane Wave Expansion ◽  
Threshold Switching ◽  
Wave Interference ◽  
All Optical ◽  
Fdtd Methods ◽  
Difference Time

Abstract In this study, we are going to design all optical 1-bit comparator by combining wave interference and threshold switching methods. The final structure composed of two nonlinear ring resonators and seven waveguides. The functionality of the suggested logical structure is analyzed and simulated by using plane wave expansion (PWE) and finite difference time domain (FDTD) methods. According to results, the proposed all optical 1-bit comparator has faster response and smaller footprint than all previous works. The maximum ON-OFF contrast ratio, delay time and area of the suggested optical comparator are about 16.67 dB, 1.8 ps, and 513 µm2, respectively.

Emulation of multiple-functional synapses using V2C memristors with coexistence of resistive and threshold switching

2021 ◽  
Vol 135 ◽  
pp. 106123
Author(s):  
Yu Wang ◽  
Daqi Shen ◽  
Yilei Liang ◽  
Yize Zhao ◽  
Xintong Chen ◽  
...  
Keyword(s):  
Threshold Switching

scholarly journals Correction: Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

2021 ◽  
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  
Keyword(s):  
Threshold Switching ◽  
Switching Behaviour

Correction for ‘Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2’ by Jonas Keukelier et al., J. Mater. Chem. C, 2021, DOI: 10.1039/d0tc04086j.

scholarly journals Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

2021 ◽  
Vol 9 (1) ◽  
pp. 117-126
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electrical Behaviour ◽  
Electrical Measurements ◽  
Threshold Switching ◽  
Switching Behaviour

Raman spectroscopy and electrical measurements are performed on sputtered GexSe1−x thin films to identify and link bond presence to electrical behaviour.

Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film

2017 ◽  
Vol 111 (25) ◽  
pp. 252102 ◽  
Author(s):  
Guangyu Liu ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Yan Liu ◽  
Tao Li ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Chalcogenide Glass ◽  
Threshold Switching
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