Integrating Efficient Optical Gain in High-Mobility Organic Semiconductors for Multifunctional Optoelectronic Applications

2018 ◽  
Vol 28 (36) ◽  
pp. 1802454 ◽  
Author(s):  
Suqian Ma ◽  
Ke Zhou ◽  
Mengxiao Hu ◽  
Qingyuan Li ◽  
Yingjie Liu ◽  
...  
2019 ◽  
Vol 141 (8) ◽  
pp. 3589-3596 ◽  
Author(s):  
Jinlian Wang ◽  
Ming Chu ◽  
Jian-Xun Fan ◽  
Tsz-Ki Lau ◽  
Ai-Min Ren ◽  
...  

2019 ◽  
Vol 117 (1) ◽  
pp. 80-85 ◽  
Author(s):  
Tatsuyuki Makita ◽  
Shohei Kumagai ◽  
Akihito Kumamoto ◽  
Masato Mitani ◽  
Junto Tsurumi ◽  
...  

Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. TFT fabrication processes inherently require the sequential deposition of metal, semiconductor, and dielectric layers and so on, which makes it difficult to achieve reliable production of highly integrated devices. The integration issues are more apparent in organic TFTs (OTFTs), particularly for solution-processed organic semiconductors due to limits on which underlayers are compatible with the printing technologies. We demonstrate a ground-breaking methodology to integrate an active, semiconducting layer of OTFTs. In this method, a solution-processed, semiconducting membrane composed of few-molecular-layer–thick single-crystal organic semiconductors is exfoliated by water as a self-standing ultrathin membrane on the water surface and then transferred directly to any given underlayer. The ultrathin, semiconducting membrane preserves its original single crystallinity, resulting in excellent electronic properties with a high mobility up to 12cm2⋅V−1⋅s−1. The ability to achieve transfer of wafer-scale single crystals with almost no deterioration of electrical properties means the present method is scalable. The demonstrations in this study show that the present transfer method can revolutionize printed electronics and constitute a key step forward in TFT fabrication processes.


ChemInform ◽  
2011 ◽  
Vol 42 (42) ◽  
pp. no-no
Author(s):  
Shoji Shinamura ◽  
Itaru Osaka ◽  
Eigo Miyazaki ◽  
Kazuo Takimiya

2013 ◽  
Vol 25 (44) ◽  
pp. 6306-6306
Author(s):  
Toshihiro Okamoto ◽  
Chikahiko Mitsui ◽  
Masakazu Yamagishi ◽  
Katsumasa Nakahara ◽  
Junshi Soeda ◽  
...  

2014 ◽  
Vol 70 (a1) ◽  
pp. C1552-C1552
Author(s):  
Venkatesha Hathwar ◽  
Mads Jørgensen ◽  
Mattia Sist ◽  
Jacob Overgaard ◽  
Bo Iversen ◽  
...  

In recent years, semiconducting organic materials have attracted a considerable amount of interest to develop all-organic or hybrid organic-inorganic electronic devices such as organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), or photovoltaic cells. Rubrene (5,6,11,12-tetraphenyltetracene, RUB) is one of the most explored compound in this area as it has nearly 100% fluorescence quantum efficiency in solution. Additionally, the OFET fabricated by vacuum-deposited using orthorhombic rubrene single crystals show p-type characteristics with high mobility up to 20cm2/Vs (Podzorov et al., 2004). The large charge-carrier mobilities measured have been attributed to the packing motif (Fig a) which provides enough spatial overlap of the π-conjugated tetracene backbone. In the same time, RUB undergoes an oxidation in the presence of light to form rubrene endoperoxide (RUB-OX) (Fumagalli et al., 2011). RUB-OX molecules show electronic and structural properties strikingly different from those of RUB, mainly due to the disruption in the conjugate stacking of tetracene moieties. The significant semiconducting property of RUB is not clear yet. In this context, high resolution single crystal X-ray data of RUB (Fig b) and RUB-OX have been collected at 100K. Owing to the presence of weak aromatic stacking and quadrupolar interactions, the neutron single crystal data is also collected at 100K. The C-H bond distances and scaled anisotropic displacement parameters (ADP) of hydrogens from the neutron experiment are used in the multipolar refinements of electron density. The chemical bonding features (Fig c), the topology of electron density and strength of weak interaction are calculated by the Atoms in Molecules (AIM) theory (Bader, 1990). It is further supported by the source function description and mapping of non-covalent interactions based on the electron density. The detailed comparison of two organic semiconductors, RUB and RUB-OX will be discussed.


Author(s):  
Andrey Sosorev ◽  
Dmitry Dominskiy ◽  
Ivan Chernyshov ◽  
Roman Efremov

Chemical versatility of organic semiconductors provides nearly unlimited opportunities for tuning their electronic properties. However, despite decades of research, relationship between molecular structure, molecular packing and charge mobility in these materials remains poorly understood. This reduces the search for high-mobility organic semiconductors to the inefficient trial-and-error approach. For clarifying the abovementioned relationship, investigations of the effect of small changes in the chemical structure on OSs properties are particularly important. In this study, we address computationally the impact of substitution of C-H atom pairs by nitrogen atoms (N-substitution) on molecular properties, molecular packing and charge mobility of crystalline oligoacenes. Besides of decreasing frontier molecular orbital levels, N-substitution dramatically alters molecular electrostatic potential yielding pronounced electron-rich and electron-deficient areas. These changes in the molecular electrostatic potential strengthen face-to-face and edge-to-edge interactions in the corresponding crystals and result in the crossover from the herringbone packing motif to π-stacking. When the electron-rich and electron-deficient areas are large, sharply defined and, probably, have certain symmetry, charge mobility increases up to 3-4 cm2V-1s-1. The results obtained highlight the potential of azaacenes for application in organic electronic devices and are expected to facilitate rational design of organic semiconductors for steady improvement of organic electronics.


2018 ◽  
Vol 20 (28) ◽  
pp. 18912-18918 ◽  
Author(s):  
A. Yu. Sosorev ◽  
D. R. Maslennikov ◽  
I. Yu. Chernyshov ◽  
D. I. Dominskiy ◽  
V. V. Bruevich ◽  
...  

Raman spectroscopy and calculations probe the impact of low-frequency vibrations in anisotropic electron–phonon interaction.


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