The Drive Force of Electrical Breakdown of Large-Area Molecular Tunnel Junctions

2018 ◽  
Vol 28 (28) ◽  
pp. 1801710 ◽  
Author(s):  
Li Yuan ◽  
Li Jiang ◽  
Christian A. Nijhuis
Keyword(s):  
Tunnel Junctions ◽  
Electrical Breakdown ◽  
Large Area ◽  
Drive Force

Large Area and Low Aspect Ratio Linear Magnetic Tunnel Junctions With a Soft-Pinned Sensing Layer

2012 ◽  
Vol 48 (11) ◽  
pp. 3719-3722 ◽  
Author(s):  
R. Ferreira ◽  
E. Paz ◽  
P. P. Freitas ◽  
J. Wang ◽  
S. Xue
Keyword(s):  
Aspect Ratio ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Large Area ◽  
Low Aspect Ratio

scholarly journals Switching current measurements of large area Josephson tunnel junctions

2003 ◽  
Vol 74 (8) ◽  
pp. 3740-3748 ◽  
Author(s):  
A. Wallraff ◽  
A. Lukashenko ◽  
C. Coqui ◽  
A. Kemp ◽  
T. Duty ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Large Area ◽  
Switching Current ◽  
Josephson Tunnel ◽  
Josephson Tunnel Junctions

scholarly journals Electric field spectroscopy of material defects in transmon qubits

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Jürgen Lisenfeld ◽  
Alexander Bilmes ◽  
Anthony Megrant ◽  
Rami Barends ◽  
Julian Kelly ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Electric Fields ◽  
Defect Formation ◽  
Tunnel Junctions ◽  
Dipole Moments ◽  
Device Fabrication ◽  
Superconducting Qubits ◽  
Atomic Scale ◽  
Large Area ◽  
Tunnel Barriers

AbstractSuperconducting integrated circuits have demonstrated a tremendous potential to realize integrated quantum computing processors. However, the downside of the solid-state approach is that superconducting qubits suffer strongly from energy dissipation and environmental fluctuations caused by atomic-scale defects in device materials. Further progress towards upscaled quantum processors will require improvements in device fabrication techniques, which need to be guided by novel analysis methods to understand and prevent mechanisms of defect formation. Here, we present a technique to analyse individual defects in superconducting qubits by tuning them with applied electric fields. This provides a spectroscopy method to extract the defects’ energy distribution, electric dipole moments, and coherence times. Moreover, it enables one to distinguish defects residing in Josephson junction tunnel barriers from those at circuit interfaces. We find that defects at circuit interfaces are responsible for about 60% of the dielectric loss in the investigated transmon qubit sample. About 40% of all detected defects are contained in the tunnel barriers of the large-area parasitic Josephson junctions that occur collaterally in shadow evaporation, and only $$\approx$$≈3% are identified as strongly coupled defects, which presumably reside in the small-area qubit tunnel junctions. The demonstrated technique provides a valuable tool to assess the decoherence sources related to circuit interfaces and to tunnel junctions that is readily applicable to standard qubit samples.

scholarly journals Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance

RSC Advances ◽  
2018 ◽  
Vol 8 (36) ◽  
pp. 19939-19949 ◽  
Author(s):  
C. S. Suchand Sangeeth ◽  
Li Jiang ◽  
Christian A. Nijhuis
Keyword(s):  
Contact Resistance ◽  
Bottom Electrode ◽  
Electrode Materials ◽  
Tunnel Junctions ◽  
Molecular Junctions ◽  
Electrical Characteristics ◽  
Large Area ◽  
Self Assembled Monolayer ◽  
Self Assembled ◽  
Induced Defects

In large area molecular junctions, defects are always present and can be caused by impurities and/or defects in the electrode materials and/or SAMs, but how they affect the electrical characteristics of junctions has rarely been studied.

Convergent Beam Electron Diffraction

1978 ◽  
Vol 36 (3) ◽  
pp. 304-315
Author(s):  
G. Lehmpfuhl
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Crystal Surface ◽  
Diffraction Spot ◽  
Crystal Thickness ◽  
Large Area ◽  
Electron Microscopic ◽  
Additional Information ◽  
Microscopic Investigations

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.

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