scholarly journals Transistors: Large-Area Schottky Barrier Transistors Based on Vertically Stacked Graphene-Metal Oxide Heterostructures (Adv. Funct. Mater. 30/2017)

2017 ◽  
Vol 27 (30) ◽  
Author(s):  
Seongchan Kim ◽  
Young Jin Choi ◽  
Yongsuk Choi ◽  
Moon Sung Kang ◽  
Jeong Ho Cho
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Large Area ◽  
Oxide Heterostructures

Large-Area Schottky Barrier Transistors Based on Vertically Stacked Graphene-Metal Oxide Heterostructures

2017 ◽  
Vol 27 (30) ◽  
pp. 1700651 ◽  
Author(s):  
Seongchan Kim ◽  
Young Jin Choi ◽  
Yongsuk Choi ◽  
Moon Sung Kang ◽  
Jeong Ho Cho
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Large Area ◽  
Oxide Heterostructures

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

2015 ◽  
Vol 821-823 ◽  
pp. 177-180 ◽  
Author(s):  
Chiaki Kudou ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Keiko Masumoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dielectric Breakdown ◽  
Layer Growth ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Schottky Barrier Diodes ◽  
Current Time

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

scholarly journals Metal-induced n+/n homojunction for ultrahigh electron mobility transistors

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Ji-Min Park ◽  
Hyoung-Do Kim ◽  
Hongrae Joh ◽  
Seong Cheol Jang ◽  
Kyung Park ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Density Functional ◽  
Metal Layer ◽  
Cost Effective ◽  
Interface Layer ◽  
Field Effect Mobility ◽  
High Concentration ◽  
Large Area ◽  
Electron Mobility Transistors

AbstractA self-organized n+/n homojunction is proposed to achieve ultrahigh performance of thin film transistors (TFTs) based on an amorphous (Zn,Ba)SnO3 (ZBTO) semiconductor with sufficiently limited scattering centers. A deposited Al layer can induce a highly O-deficient (n+) interface layer in the back channel of a-ZBTO without damaging the front channel layer via the formation of a metal-oxide interlayer between the metal and back channel. The n+ layer can significantly improve the field-effect mobility by providing a relatively high concentration of free electrons in the front n-channel ZBTO, where the scattering of carriers is already controlled. In comparison with a Ti layer, the Al metal layer is superior, as confirmed by first-principles density functional theory (DFT) calculations, due to the stronger metal-O bonds, which make it easier to form a metal oxide AlOx interlayer through the removal of oxygen from ZBTO. The field-effect mobility of a-ZBTO with an Al capping layer can reach 153.4 cm2/Vs, which is higher than that of the pristine device, i.e., 20.8 cm2/Vs. This result paves the way for the realization of a cost-effective method for implementing indium-free ZBTO devices in various applications, such as flat panel displays and large-area electronic circuits.

From 2-D Nanocrystalline Films to 1-D Nanomaterials: An Overview

MRS Advances ◽  
2018 ◽  
Vol 3 (15-16) ◽  
pp. 803-816
Author(s):  
Chunxu Pan ◽  
Jun Wu ◽  
Gongsheng Song ◽  
Chengzhi Luo ◽  
Delong Li ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Growth Model ◽  
Carbon Nanomaterials ◽  
Research Work ◽  
Pure Metal ◽  
Nanocrystalline Films ◽  
Large Area ◽  
Electro Deposition ◽  
Good Shape ◽  
Deposition Parameters

ABSTRACTIn the past few years, our group worked on the area of transformation from the two-dimensional (2-D) nanocrystalline films to one-dimensional (1-D) nanomaterials by using thermal oxidation. In this paper, we overview the research work on the controllable growth processes, transformation phenomena, growth mechanisms and applications. In general, the preparation process includes the following steps: 1) prepare a pure metal nanocrystalline film via a pulse electro – deposition; 2) grow variant 1-D nanomaterials, such as carbon nanotubes (CNTs), carbon nanofibers (CNFs), and 1-D metal oxide nanoneedles involving ZnO, CuO and Fe3O4, etc. by using this film as catalyst. This process exhibits the following features: 1) the 1-D nanomaterials grow according to “base growth” model and no residual catalyst exists at the tip of the products; 2) the diameter of the 1-D nanomaterials can be controlled by controlling grain sizes of the 2-D films through adjusting pulse electro-deposition parameters; 3) it is more easily to get the 1-D nanomaterials with large area, uniform, vertical alignment and good shape on the substrates. We propose a “solid state based-up diffusion growth mechanism” for growth of the 1-D metal oxide nanoneedles, and “base growth model” for the 1-D carbon nanomaterials. The physical properties, such as Field emission and magnetics, of the 1-D metal oxide nanoneedles were studied, which showed desired values. In addition, we couple the ZnO nanoneedles with NiO, TiO2, graphene, Au nanoparticles, etc. for enhancing photocatalytic properties in the areas of environmental purification.

scholarly journals Analysis of the interfacial characteristics of BiVO4/metal oxide heterostructures and its implication on their junction properties

2019 ◽  
Vol 21 (9) ◽  
pp. 5086-5096 ◽  
Author(s):  
Yannick Hermans ◽  
Sebastián Murcia-López ◽  
Andreas Klein ◽  
Roel van de Krol ◽  
Teresa Andreu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Photoelectron Spectroscopy ◽  
Interface Properties ◽  
Oxide Heterostructures ◽  
Interfacial Characteristics

Throughin situphotoelectron spectroscopy, the interface properties of BiVO4/NiO, BiVO4/CoOxand BiVO4/ITO were investigated.

Band offsets in transition-metal oxide heterostructures

2013 ◽  
Vol 46 (29) ◽  
pp. 295303 ◽  
Author(s):  
I Goldfarb ◽  
D A A Ohlberg ◽  
J P Strachan ◽  
M D Pickett ◽  
J Joshua Yang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Transition Metal Oxide ◽  
Oxide Heterostructures ◽  
Band Offsets
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