scholarly journals The Misfit Dislocation Core Phase in Complex Oxide Heteroepitaxy

2017 ◽  
Vol 28 (8) ◽  
pp. 1704437 ◽  
Author(s):  
Núria Bagués ◽  
José Santiso ◽  
Bryan D. Esser ◽  
Robert E. A. Williams ◽  
Dave W. McComb ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Core ◽  
Complex Oxide ◽  
Core Phase

scholarly journals Atomic Resolution Imaging and Quantitative Elemental Mapping of the Misfit Dislocation Core Phase in Multicomponent Oxides

2018 ◽  
Vol 24 (S1) ◽  
pp. 24-25
Author(s):  
N. Bagués ◽  
J. Santiso ◽  
B. D. Esser ◽  
R. E. A. Williams ◽  
D. W. McComb ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Core ◽  
Atomic Resolution ◽  
Elemental Mapping ◽  
Core Phase ◽  
Resolution Imaging ◽  
Multicomponent Oxides

scholarly journals Dislocation Core Phase Imaging by DBI

2019 ◽  
Vol 25 (S2) ◽  
pp. 104-105 ◽  
Author(s):  
Silvia Penkova ◽  
Rodney A. Herring
Keyword(s):  
Dislocation Core ◽  
Phase Imaging ◽  
Core Phase

scholarly journals Misfit Dislocation Guided Topographic and Conduction Patterning in Complex Oxide Epitaxial Thin Films

2016 ◽  
Vol 3 (14) ◽  
pp. 1600106 ◽  
Author(s):  
Felip Sandiumenge ◽  
Núria Bagués ◽  
José Santiso ◽  
Markos Paradinas ◽  
Alberto Pomar ◽  
...  
Keyword(s):  
Thin Films ◽  
Misfit Dislocation ◽  
Complex Oxide ◽  
Epitaxial Thin Films

Cs-Corrected Scanning Transmission Electron Microscopy Investigation of Dislocation Core Configurations at a SrTiO3/MgO Heterogeneous Interface

2013 ◽  
Vol 19 (3) ◽  
pp. 706-715 ◽  
Author(s):  
Yuanyuan Zhu ◽  
Chengyu Song ◽  
Andrew M. Minor ◽  
Haiyan Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Misfit Dislocation ◽  
Scanning Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Dislocation Core ◽  
Dislocation Network ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractHeterostructures and interfacial defects in a 40-nm-thick SrTiO3 (STO) film grown epitaxially on a single-crystal MgO (001) were investigated using aberration-corrected scanning transmission electron microscopy and geometric phase analysis. The interface of STO/MgO was found to be of the typical domain-matching epitaxy with a misfit dislocation network having a Burgers vector of ½ aSTO ⟨100⟩. Our studies also revealed that the misfit dislocation cores at the heterogeneous interface display various local cation arrangements in terms of the combination of the extra-half inserting plane and the initial film plane. The type of the inserting plane, either the SrO or the TiO2 plane, alters with actual interfacial conditions. Contrary to previous theoretical calculations, the starting film planes were found to be dominated by the SrO layer, i.e., a SrO/MgO interface. In certain regions, the starting film planes change to the TiO2/MgO interface because of atomic steps at the MgO substrate surface. In particular, four basic misfit dislocation core configurations of the STO/MgO system have been identified and discussed in relation to the substrate surface terraces and possible interdiffusion. The interface structure of the system in reverse—MgO/STO—is also studied and presented for comparison.

DIFFUSION OF LITHIUM IN SILICON AFFECTED BY 60° MISFIT-DISLOCATION

2013 ◽  
Vol 27 (23) ◽  
pp. 1350168 ◽  
Author(s):  
WEI ZHAO ◽  
QINGYUAN MENG ◽  
LIJUN YANG ◽  
CHAOYING WANG
Keyword(s):  
Binding Energy ◽  
Misfit Dislocation ◽  
Diffusion Barrier ◽  
Dislocation Line ◽  
Dislocation Core ◽  
Simulation Method ◽  
Atom Diffusion ◽  
Multi Scale ◽  
The Core ◽  
Diffusion Dynamics

In this paper, the diffusion dynamics of Li atom in bulk Si with misfit (60°) dislocation has been investigated with the multi-scale simulation method. The results demonstrate that the dislocation core may confine the Li atom diffusion along the dislocation line, with its much larger binding energy and relatively smaller diffusion barrier compared to that in bulk Si . The reconstructions occurred in the dislocation core may open a low barrier route for the Li atoms entering into the core.

Effect of Dislocation Core Spreading at Interfaces on Strength of Thin-films

2002 ◽  
Vol 17 (7) ◽  
pp. 1808-1813 ◽  
Author(s):  
Shefford P. Baker ◽  
Lin Zhang ◽  
Huajian Gao
Keyword(s):  
Thin Films ◽  
Plastic Deformation ◽  
Misfit Dislocation ◽  
Critical Stress ◽  
Strain Energy ◽  
Critical Strain ◽  
Dislocation Core ◽  
Interface Strength ◽  
Line Energy ◽  
Dislocation Spacing

Critical strain arguments are often used to model the thickness dependence of the strength of thin films on substrates. In these arguments, plastic deformation occurs when the stress in a film is high enough that the strain energy relieved by the introduction of a misfit dislocation is sufficient to generate the line energy of that misfit. Such models typically assume compact dislocation cores. However, experimental evidence suggests that, under certain circumstances, dislocation cores may spread out into the interface between the film and the substrate. If this happens, the energy of the misfit dislocation, and the critical stress needed for its propagation, will be lowered. In this paper, the effect of dislocation core spreading on the critical stress has been modeled. The effects of interface strength, film thickness, and misfit dislocation spacing are considered.

Direct structure images of 30° partial dislocation cores in silicon

1987 ◽  
Vol 45 ◽  
pp. 242-243
Author(s):  
J. C. Barry ◽  
H. Alexander
Keyword(s):  
Dislocation Core ◽  
Preparation Technique ◽  
Burgers Vector ◽  
Vector Type ◽  
Sample Preparation Technique ◽  
Lattice Images ◽  
Dislocation Core Structure ◽  
Type Lattice ◽  
Direct Inspection

Dislocations in silicon produced by plastic deformation are generally dissociated into partials. 60° dislocations (Burgers vector type 1/2[101]) are dissociated into 30°(Burgers vector type 1/6[211]) and 90°(Burgers vector type 1/6[112]) dislocations. The 30° partials may be either of “glide” or “shuffle” type. Lattice images of the 30° dislocation have been obtained with a JEM 100B, and with a JEM 200Cx. In the aforementioned experiments a reasonable but imperfect match was obtained with calculated images for the “glide” model. In the present experiment direct structure images of 30° dislocation cores have been obtained with a JEOL 4000EX. It is possible to deduce the 30° dislocation core structure by direct inspection of the images. Dislocations were produced by compression of single crystal Si (sample preparation technique described in Alexander et al.).

Structural analysis of a Σ5 grain boundary in YBa2Cu3O7δ

1993 ◽  
Vol 51 ◽  
pp. 942-943
Author(s):  
J.-Y. Wang ◽  
Y. Zhu ◽  
A.H. King ◽  
M. Suenaga
Keyword(s):  
Grain Boundary ◽  
Lattice Mismatch ◽  
Weak Link ◽  
Coincidence Site Lattice ◽  
Large Angle ◽  
Dislocation Core ◽  
Superconducting Order Parameter ◽  
Outstanding Problem ◽  
Transmission Electron

One outstanding problem in YBa2Cu3O7−δ superconductors is the weak link behavior of grain boundaries, especially boundaries with a large-angle misorientation. Increasing evidence shows that lattice mismatch at the boundaries contributes to variations in oxygen and cation concentrations at the boundaries, while the strain field surrounding a dislocation core at the boundary suppresses the superconducting order parameter. Thus, understanding the structure of the grain boundary and the grain boundary dislocations (which describe the topology of the boundary) is essential in elucidating the superconducting characteristics of boundaries. Here, we discuss our study of the structure of a Σ5 grain boundary by transmission electron microscopy. The characterization of the structure of the boundary was based on the coincidence site lattice (CSL) model.Fig.l shows two-beam images of the grain boundary near the projection. An array of grain boundary dislocations, with spacings of about 30nm, is clearly visible in Fig. 1(a), but invisible in Fig. 1(b).

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