scholarly journals Fullerene Additives Convert Ambipolar Transport to p-Type Transport while Improving the Operational Stability of Organic Thin Film Transistors

2016 ◽  
Vol 26 (25) ◽  
pp. 4472-4480 ◽  
Author(s):  
Michael J. Ford ◽  
Ming Wang ◽  
Hung Phan ◽  
Thuc-Quyen Nguyen ◽  
Guillermo C. Bazan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Operational Stability ◽  
Organic Thin Film ◽  
P Type ◽  
Ambipolar Transport

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Effective performance improvement of organic thin film transistors by using tri-layer insulators

2018 ◽  
Vol 83 (2) ◽  
pp. 20201 ◽  
Author(s):  
Yao Ni ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Hang Yu ◽  
Yanyun Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Silicon Oxide ◽  
Layer Structure ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Interface Quality ◽  
Organic Semiconductor Materials ◽  
Effective Performance ◽  
P Type

Organic thin film transistors (OTFTs) with silicon oxide (SiO2)/poly(4-vinylphenol) (PVP)/polymethylmethacrylate (PMMA) tri-layer structure (SPP) as dielectric layers have been fabricated. To verify the validity of such tri-layer structure, two different organic semiconductor materials such as p-type pentacene and n-type fluorinated copper phthalo–cyanine (F16CuPc) are both used for fabricating OTFTs. Comparing with the OTFTs even by using PMMA modification, the better interface quality existing between SPP dielectric and organic film leads a higher conductive efficiency for transport carriers in channel. And then the field effect carriers (hole in pentacene OTFTs and electron in F16CuPc OTFTs) mobilities are both increased obviously. Our results show the SPP dielectric structure can be widely used to improve performance of OTFTs.

Photoresponsive ambipolar transport characteristics of organic thin film transistors using soluble HB-ant-THT and PCBM composites

2012 ◽  
Vol 162 (3-4) ◽  
pp. 332-336 ◽  
Author(s):  
Seung Ho Yang ◽  
Mi Yeon Cho ◽  
Seong Gi Jo ◽  
Jin Sun Jung ◽  
Ki Hwa Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Ambipolar Transport
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