scholarly journals Engineering of Spin Injection and Spin Transport in Organic Spin Valves Using π-Conjugated Polymer Brushes

2016 ◽  
Vol 26 (22) ◽  
pp. 3999-4006 ◽  
Author(s):  
Rugang Geng ◽  
Anandi Roy ◽  
Wenbo Zhao ◽  
Ram Chandra Subedi ◽  
Xiaoguang Li ◽  
...  
Keyword(s):  
Conjugated Polymer ◽  
Polymer Brushes ◽  
Spin Transport ◽  
Spin Injection ◽  
Spin Valves

scholarly journals Investigation of the thermal tolerance of silicon-based lateral spin valves

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
N. Yamashita ◽  
S. Lee ◽  
R. Ohshima ◽  
E. Shigematsu ◽  
H. Koike ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Thermal Tolerance ◽  
Spin Transport ◽  
Layer Structure ◽  
Spin Injection ◽  
Spin Valves ◽  
Thermally Stable ◽  
Plane Direction ◽  
Silicon Based ◽  
Spin Devices

AbstractImprovement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.

scholarly journals Improved Thermal Tolerance of Silicon-based Lateral Spin Valves

2020 ◽  
Author(s):  
Naoto Yamashita ◽  
Soobeom Lee ◽  
Ryo Ohshima ◽  
Ei Shigematsu ◽  
Hayato Koike ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Thermal Tolerance ◽  
Spin Transport ◽  
Layer Structure ◽  
Spin Injection ◽  
Spin Valves ◽  
Thermally Stable ◽  
Plane Direction ◽  
Silicon Based ◽  
Spin Devices

Abstract Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300°C, resulting in the formation of a Au/Si interface. The Au-Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 mm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400°C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.

scholarly journals Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al2O3 spin injection and detection barriers

2015 ◽  
Vol 252 (11) ◽  
pp. 2395-2400 ◽  
Author(s):  
Marc Drögeler ◽  
Frank Volmer ◽  
Maik Wolter ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Spin Injection ◽  
Atomic Layer ◽  
Bilayer Graphene ◽  
Spin Valves ◽  
Bottom Up ◽  
Spin Injection And Detection

Substantial and stable magnetoresistance and spin conductance in phosphorene-based spintronic devices with Co electrodes

2021 ◽  
Author(s):  
Zhao Chen ◽  
Guojun Li ◽  
Haidi Wang ◽  
Qiong Tang ◽  
ZhongJun Li
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Injection Efficiency ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Magnetoresistance Ratio ◽  
Large Tunnel ◽  
Spin Conductance

Phosphorene-based device with fcc Co(111) electrodes shows excellent spin transport characteristics: large tunnel magnetoresistance ratio and stable spin injection efficiency.

Spin injection, spin transport and spin coherence

2002 ◽  
Vol 17 (4) ◽  
pp. 285-297 ◽  
Author(s):  
M Oestreich ◽  
M Bender ◽  
J H bner ◽  
D H gele ◽  
W W R hle ◽  
...  
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Spin Coherence
Sign in / Sign up

Export Citation Format

Share Document