Electron Transport at the Nanometer-Scale Spatially Revealed by Four-Probe Scanning Tunneling Microscopy

2013 ◽  
Vol 23 (20) ◽  
pp. 2509-2524 ◽  
Author(s):  
An-Ping Li ◽  
Kendal W. Clark ◽  
X.-G. Zhang ◽  
Arthur P. Baddorf
Keyword(s):  
Electron Transport ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscopy

Electron transport through single phthalocyanine molecules studied using scanning tunneling microscopy

2008 ◽  
Vol 78 (23) ◽  
Author(s):  
A. F. Takács ◽  
F. Witt ◽  
S. Schmaus ◽  
T. Balashov ◽  
M. Bowen ◽  
...  
Keyword(s):  
Electron Transport ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Recording at the Nanometer Scale on p-Nitrobenzonitrile Thin Films by Scanning Tunneling Microscopy

2001 ◽  
Vol 13 (14) ◽  
pp. 1103-1105 ◽  
Author(s):  
D. X. Shi ◽  
Y. L. Song ◽  
D. B. Zhu ◽  
H. X. Zhang ◽  
S. S. Xie ◽  
...  
Keyword(s):  
Thin Films ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscopy

Stm Observation of Solid Phase Epitaxy Processes of Ar-Sputtered Si(100) Surfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
Katsuhiro Uesugi ◽  
Masamichi Yoshimura ◽  
Takafumi Yao ◽  
Tomoshige Sato ◽  
Takashi Sueyoshi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
Double Layer ◽  
Solid Phase ◽  
The Other ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Solid Phase Epitaxy ◽  
Tunneling Microscopy ◽  
Partially Observed

ABSTRACTScanning tunneling microscopy (STM) is used to investigate the surface morphology of Ar+-ion bombarded Si(100) surfaces and to elucidate the very beginning stages of solid phase epitaxy (SPE) processes of the Ar+-ion bombarded Si surfaces. The Ar+-ion bombarded Si surface consists of hillocks of 1–2 nm in diameter and 0.35–0.75 nm in height. The onset of SPE initiates at around 590°C, at which temperature a (2×2) structure surrounded by amorphous regions is partially observed on terraces of the surface. During annealing at 590–620°C, the areas of the c(2×2) and c(4×4) reconstruction surrounded by amorphous regions develops. New defect models for the (2×2) and c(4×4) structures are proposed w here alternating arrangements of the buckled dimers together with missing dimer defects are considered. On the other hand, after thermal annealing of the Ar+-ion bombarded Si at 830°C for 10 sec, terraces of (2×1) and (1×2) orientations arc observed on the surface, and pyramidal structures on a nanometer-scale which consists of double-layer step edges (dimer rows perpendicular to terrace edge) arc observed.

Threshold behavior of nanometer scale fabrication process using scanning tunneling microscopy

1997 ◽  
Vol 81 (3) ◽  
pp. 1227-1230 ◽  
Author(s):  
Chen Wang ◽  
Xiaodong Li ◽  
Guangyi Shang ◽  
Xiaohui Qiu ◽  
Chunli Bai
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Fabrication Process ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Threshold Behavior ◽  
Tunneling Microscopy
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