Surface-Modified High-k Oxide Gate Dielectrics for Low-Voltage High-Performance Pentacene Thin-Film Transistors

2007 ◽  
Vol 17 (6) ◽  
pp. 958-962 ◽  
Author(s):  
C. S. Kim ◽  
S. J. Jo ◽  
S. W. Lee ◽  
W. J. Kim ◽  
H. K. Baik ◽  
...  
2013 ◽  
Vol 11 (8) ◽  
pp. 1509-1512 ◽  
Author(s):  
Dedong Han ◽  
Jian Cai ◽  
Wei Wang ◽  
Liangliang Wang ◽  
Yi Wang ◽  
...  

2016 ◽  
Vol 4 (4) ◽  
pp. 807-814 ◽  
Author(s):  
Jeong-Do Oh ◽  
Dae-Kyu Kim ◽  
Jang-Woon Kim ◽  
Young-Geun Ha ◽  
Jong-Ho Choi

High-performance pentacene thin-film transistors operating at low voltages were fabricated using hafnium (Hf)-based blend gate dielectrics.


2006 ◽  
Vol 88 (24) ◽  
pp. 243513 ◽  
Author(s):  
D. K. Hwang ◽  
Kimoon Lee ◽  
Jae Hoon Kim ◽  
Seongil Im ◽  
Chang Su Kim ◽  
...  

2006 ◽  
Vol 88 (24) ◽  
pp. 243515 ◽  
Author(s):  
Chang Su Kim ◽  
Sung Jin Jo ◽  
Sung Won Lee ◽  
Woo Jin Kim ◽  
Hong Koo Baik ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (30) ◽  
pp. 16788-16799 ◽  
Author(s):  
Li Zhu ◽  
Gang He ◽  
Jianguo Lv ◽  
Elvira Fortunato ◽  
Rodrigo Martins

Solution based deposition has been recently considered as a viable option for low-cost flexible electronics.


2016 ◽  
Vol 4 (45) ◽  
pp. 10715-10721 ◽  
Author(s):  
Chundan Zhu ◽  
Ao Liu ◽  
Guoxia Liu ◽  
Guixia Jiang ◽  
You Meng ◽  
...  

High-performance n- and p-type metal-oxide thin-film transistors are fabricated on ZrOx high-k dielectrics via a nontoxic water-inducement method.


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