Nanoindentation and Bending Fracture Behavior of Flexible Sulfide Thin Films Grown at Near Room Temperature With in Situ Tensile/Compressive Stress

2019 ◽  
Vol 21 (7) ◽  
pp. 1801329 ◽  
Author(s):  
Da Bin Kim ◽  
Seung Min Lee ◽  
Jin Woo Jang ◽  
Bhaskar Chandra Mohanty ◽  
Yong Soo Cho
Keyword(s):  
Thin Films ◽  
Compressive Stress ◽  
Fracture Behavior ◽  
Room Temperature ◽  
Bending Fracture

Effect of Deposition Conditions on Intrinsic Stress, Phase Transformation and Stress Relaxation in Tantalum Thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
A. Mutscheller ◽  
L. A. Clevenger ◽  
J.M.E. Harper ◽  
C. Cabrai ◽  
K. Barmakt
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Phase Transformation ◽  
Stress Relaxation ◽  
Compressive Stress ◽  
Stress Relief ◽  
Beta Phase ◽  
Alpha Phase ◽  
Intrinsic Stress

AbstractWe demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes complete stress relaxation and a large decrease in the resistance of tantalum thin films. 100 nm beta tantalum thin films were deposited onto thermally oxidized <100> silicon wafers by dc magnetron sputtering with argon. In situ stress and resistance at temperature were measured during temperature-ramped annealing in purified He. Upon heating, films that were initially compressively stressed showed increasing compressive stress due to thermo-elastic deformation from 25 to 550°C, slight stress relief due to plastic deformation from 550 to 700°C and complete stress relief due to the beta to alpha phase transformation at approximately 700–800°C. Incomplete compressive stress relaxation was observed at high temperatures if the film was initially deposited in the alpha phase or if the beta phase did not completely transform into alpha by 800°C. This incomplete beta to alpha phase transition was most commonly observed on samples that had radio frequency substrate bias greater than -100 V. We conclude that the main stress relief mechanism for tantalum thin films is the beta to alpha phase transformation that occurs at 700 to 800°C.

scholarly journals In situ deformation of nanocrystalline Al2O3 thin films at room temperature

2016 ◽  
pp. 195-196
Author(s):  
Erkka Frankberg ◽  
Lucile Joly-Pottuz ◽  
Francisco Garcia ◽  
Turkka Salminen ◽  
Thierry Douillard ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
In Situ Deformation

scholarly journals In situ tuning of magnetization via topotactic lithium insertion in ordered mesoporous lithium ferrite thin films

2016 ◽  
Vol 4 (38) ◽  
pp. 8889-8896 ◽  
Author(s):  
Christian Reitz ◽  
Christian Suchomski ◽  
Di Wang ◽  
Horst Hahn ◽  
Torsten Brezesinski
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Lithium Ferrite ◽  
Lithium Insertion ◽  
Ordered Mesoporous ◽  
Ferrite Thin Films

Topotactic Li insertion into polymer-templated mesostructured α-LiFe5O8 thin films allows for the intriguing possibility of tuning the magnetization at room temperature.

Phase Transformations in Sol-Gel PZT Thin Films

2000 ◽  
Vol 623 ◽  
Author(s):  
D.P. Eakin ◽  
M.G. Norton ◽  
D.F. Bahr
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Room Temperature ◽  
Structural Changes ◽  
Sol Gel ◽  
Ex Situ ◽  
Ambient Conditions ◽  
Crystalline Films ◽  
In Situ Heating

AbstractThin films of PZT were deposited onto platinized and bare single crystal NaCl using spin coating and sol-gel precursors. These films were then analyzed using in situ heating in a transmission electron microscope. The results of in situ heating are compared with those of an ex situ heat treatment in a standard furnace, mimicking the heat treatment given to entire wafers of these materials for use in MEMS and ferroelectric applications. Films are shown to transform from amorphous to nanocrystalline over the course of days when held at room temperature. While chemical variations are found between films crystallized in ambient conditions and films crystallized in the vacuum conditions of the microscope, the resulting crystal structures appear to be insensitive to these differences. Significant changes in crystal structure are found at 500°C, primarily the change from largely amorphous to the beginnings of clearly crystalline films. Crystallization does occur over the course of weeks at room temperature in these films. Structural changes are more modest in these films when heated in the TEM then those observed on actual wafers. The presence of Pt significantly influences both the resulting structure and morphology in both in situ and ex situ heated films. Without Pt present, the films appear to form small, 10 nm grains consisting of both cubic and tetragonal phases, whereas in the case of the Pt larger, 100 nm grains of a tetragonal phase are formed.

Controlled in situ fabrication of Ag2O/AgO thin films by a dry chemical route at room temperature for hybrid solar cells

2014 ◽  
Vol 43 (29) ◽  
pp. 11333-11338 ◽  
Author(s):  
Jie Wei ◽  
Yan Lei ◽  
Huimin Jia ◽  
Jiamei Cheng ◽  
Hongwei Hou ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Room Temperature ◽  
Hybrid Solar Cells ◽  
Photovoltaic Devices ◽  
Chemical Route ◽  
In Situ Fabrication

Silver oxides (Ag2O and AgO) have attracted increasing attention as potential solar cell materials for photovoltaic devices due to their ideal bandgap and non-toxicity.

IN-SITU Analysis Of The Microstructure of Thermally Treated Thin Copper Films

1993 ◽  
Vol 309 ◽  
Author(s):  
J. Nucci ◽  
H. Neves ◽  
Y. Shacham ◽  
E. Eisenbraun ◽  
B. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Room Temperature ◽  
Thermal Evolution ◽  
Electron Beam Evaporation ◽  
Copper Films ◽  
Tem Analysis ◽  
Heat Treated ◽  
Baseline Information

AbstractCopper thin films were deposited by sputtering, electron beam evaporation, and electroless plating onto nitride membranes for TEM analysis. The samples were heat treated in-situ from room temperature to 600 °C for structural and chemical analysis. The as-deposited and heat treated microstructures were investigated. Orientation changes with heat treatment and reactions among the sample layers were analyzed by electron diffraction. This work provides baseline information for a study of the thermal evolution of copper lines.

scholarly journals Comparative Phenomenological Study of Fracture Behavior of Ceramic and Glass Foams under Compressive Stress Using In Situ X-Ray Microtomography

2017 ◽  
Vol 19 (9) ◽  
pp. 1700286 ◽  
Author(s):  
Jana Hubálková ◽  
Claudia Voigt ◽  
Anne Schmidt ◽  
Kirsten Moritz ◽  
Christos G. Aneziris
Keyword(s):  
Compressive Stress ◽  
Fracture Behavior ◽  
Phenomenological Study ◽  
X Ray

Preparation of Pb-Based Ferroelectric thin films by Ion- and Photo-Assisted Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
Shigenori Hayashi ◽  
Kenji Iijima ◽  
Takashi Hirao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Preparation Process ◽  
Pzt Thin Films ◽  
In Situ Preparation ◽  
Evaporation Technique ◽  
Film Preparation ◽  
Deposition Techniques

AbstractThin film process for Pb-based perovskite ferroelectrics has been investigated. Synthesis of epitaxial PLZT, PLT and PZT thin films by rfmagnetron sputtering in our laboratory was reviewed. Basic thin film process and applications were discussed. For further investigation, film preparation process was developed by co-deposition and assisted deposition techniques. The substrate temperature required for in-situ preparation of perovskite could be reduced to room temperature by an ion- and photoassisted co-evaporation technique.

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