Transmission Electron Energy Loss Spectrometry in Materials Science and The EELS Atlas

2004 ◽  
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Materials Science ◽  
Transmission Electron ◽  
Electron Energy Loss Spectrometry ◽  
Electron Energy Loss

Accurate quantification of lithium in aluminium-lithium alloys with electron energy-loss spectrometry

1989 ◽  
Vol 425 (1868) ◽  
pp. 91-111 ◽  
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Partial Cross Section ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Electron Energy Loss Spectrometry ◽  
Δ Phase ◽  
Extrapolation Scheme ◽  
Electron Energy Loss ◽  
Accurate Quantification

The composition of the Al 3 Li (δ)' metastable precipitation-hardening phase is an important factor in understanding the strengthening behaviour of Al-Li base alloys. The procedure for using electron energy-loss spectrometry in a transmission electron microscope for accurate quantification of the Li content of δ' is established. All factors that can affect the accuracy of the analysis procedure are considered, namely: the specimen preparation, the mode of operation of the microscope, the identification of spectra from through-thickness regions of the specimen, the calibration of the Li / Al partial cross-section ratio, the deconvolution of the spectra and the background extrapolation scheme. The composition of the δ' phase in the temperature range 155-290 °C is determined, and the non-stoichiometry of this phase is clearly shown.

Trends in Electron Energy Loss Spectroscopy

1977 ◽  
Vol 35 ◽  
pp. 228-229
Author(s):  
C. Colliex ◽  
P. Trebbia
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Materials Science ◽  
Analytical Technique ◽  
Recent Developments ◽  
Quantitative Results ◽  
Electron Microscopes ◽  
Electron Energy Loss ◽  
Primary Electrons

The physical foundations for the use of electron energy loss spectroscopy towards analytical purposes, seem now rather well established and have been extensively discussed through recent publications. In this brief review we intend only to mention most recent developments in this field, which became available to our knowledge. We derive also some lines of discussion to define more clearly the limits of this analytical technique in materials science problems.The spectral information carried in both low ( 0<ΔE<100eV ) and high ( >100eV ) energy regions of the loss spectrum, is capable to provide quantitative results. Spectrometers have therefore been designed to work with all kinds of electron microscopes and to cover large energy ranges for the detection of inelastically scattered electrons (for instance the L-edge of molybdenum at 2500eV has been measured by van Zuylen with primary electrons of 80 kV). It is rather easy to fix a post-specimen magnetic optics on a STEM, but Crewe has recently underlined that great care should be devoted to optimize the collecting power and the energy resolution of the whole system.

Stopping-power determination for compound by EELS

1994 ◽  
Vol 52 ◽  
pp. 948-949 ◽  
Author(s):  
David C. Joy ◽  
Suichu Luo ◽  
John R. Dunlap ◽  
Dick Williams ◽  
Siqi Cao
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Materials Science ◽  
Average Energy ◽  
Stopping Power ◽  
Accurate Information ◽  
Power Calculation ◽  
Coulomb Collisions ◽  
Electron Energy Loss

In Physics, Chemistry, Materials Science, Biology and Medicine, it is very important to have accurate information about the stopping power of various media for electrons, that is the average energy loss per unit pathlength due to inelastic Coulomb collisions with atomic electrons of the specimen along their trajectories. Techniques such as photoemission spectroscopy, Auger electron spectroscopy, and electron energy loss spectroscopy have been used in the measurements of electron-solid interaction. In this paper we present a comprehensive technique which combines experimental and theoretical work to determine the electron stopping power for various materials by electron energy loss spectroscopy (EELS ). As an example, we measured stopping power for Si, C, and their compound SiC. The method, results and discussion are described briefly as below.The stopping power calculation is based on the modified Bethe formula at low energy:where Neff and Ieff are the effective values of the mean ionization potential, and the number of electrons participating in the process respectively. Neff and Ieff can be obtained from the sum rule relations as we discussed before3 using the energy loss function Im(−1/ε).

The Influence of Specimen Thickness in Quantitative Electron Energy Loss Spectroscopy

1980 ◽  
Vol 38 ◽  
pp. 112-113
Author(s):  
Nestor J. Zaluzec
Keyword(s):  
Quantitative Analysis ◽  
Adverse Effects ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Materials Science ◽  
Light Element ◽  
Specimen Thickness ◽  
Element Analysis ◽  
Electron Energy Loss

The application of electron energy loss spectroscopy (EELS) to light element analysis is rapidly becoming an important aspect of the microcharacterization of solids in materials science, however relatively stringent requirements exist on the specimen thickness under which one can obtain EELS data due to the adverse effects of multiple inelastic scattering.1,2 This study was initiated to determine the limitations on quantitative analysis of EELS data due to specimen thickness.

Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

2017 ◽  
Author(s):  
T. Dewolf ◽  
D. Cooper ◽  
N. Bernier ◽  
V. Delaye ◽  
A. Grenier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Hafnium Dioxide ◽  
Switching Mechanism ◽  
Transmission Electron ◽  
Electron Energy Loss

Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ approach allows simultaneous TEM observation and memory cell operation. After the in-situ forming, a filamentary migration of titanium within the dielectric hafnium dioxide layer has been evidenced. This migration may be at the origin of the conductive path responsible for the low and high resistive states of the memory.

In Situ Analysis of Surface Contaminant Desorption during Low-Temperature Silicon Substrate Cleaning using Reflection Electron Energy Loss Spectrometry

1992 ◽  
Vol 259 ◽  
Author(s):  
Selmer S. Wong ◽  
Shouleh Nikzad ◽  
Channing C. Ahn ◽  
Aimee L. Smith ◽  
Harry A. Atwater
Keyword(s):  
Low Temperature ◽  
Energy Loss ◽  
Electron Energy ◽  
Core Loss ◽  
Temperature Dependent ◽  
Electron Energy Loss Spectrometry ◽  
Analysis Technique ◽  
Chemical Analysis Technique ◽  
Electron Energy Loss

ABSTRACTWe have employed reflection electron energy loss spectrometry (REELS), a surface chemical analysis technique, in order to analyze contaminant coverages at the submonolayer level during low-temperature in situ cleaning of hydrogen-terminated Si(100). The chemical composition of the surface was analyzed by measurements of the C K, O K and Si L2,3 core loss intensities at various stages of the cleaning. These results were quantified using SiC(100) and SiO2 as reference standards for C and O coverage. Room temperature REELS core loss intensity analysis after sample insertion reveals carbon at fractional monolayer coverage. We have established the REELS detection limit for carbon coverage to be 5±2% of a monolayer. A study of temperature-dependent hydrocarbon desorption from hydrogen-terminated Si(100) reveals the absence of carbon on the surface at temperatures greater than 200°C. This indicates the feasibility of epitaxial growth following an in situ low-temperature cleaning and also indicates the power of REELS as an in situ technique for assessment of surface cleanliness.

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