Nano-CMOS Scaling Problems and Implications

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

IEEE Electron Device Letters ◽

10.1109/led.2008.919795 ◽

2008 ◽

Vol 29 (5) ◽

pp. 491-493 ◽

Cited By ~ 51

Author(s):

Xin Sun ◽

Qiang Lu ◽

V. Moroz ◽

H. Takeuchi ◽

G. Gebara ◽

...

Keyword(s):

Cmos Scaling

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(Invited) Advanced CMOS Scaling and FinFET Technology

ECS Transactions ◽

10.1149/05009.0003ecst ◽

2013 ◽

Vol 50 (9) ◽

pp. 3-16 ◽

Cited By ~ 4

Author(s):

E. J. Nowak

Keyword(s):

Cmos Scaling

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Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

Solid-State Electronics ◽

10.1016/j.sse.2010.04.010 ◽

2010 ◽

Vol 54 (9) ◽

pp. 855-860 ◽

Cited By ~ 97

Author(s):

T. Chiarella ◽

L. Witters ◽

A. Mercha ◽

C. Kerner ◽

M. Rakowski ◽

...

Keyword(s):

Cmos Scaling

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High κ Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-745-n8.1/t6.1 ◽

2002 ◽

Vol 745 ◽

Cited By ~ 1

Author(s):

J. Raynien Kwo ◽

Minghwei Hong

Keyword(s):

Physical Vapor Deposition ◽

Gate Dielectrics ◽

Compound Semiconductors ◽

State Density ◽

Dielectric Films ◽

Gate Stacks ◽

Materials Integration ◽

Cmos Scaling ◽

Atomic Precision ◽

Critical Issues

ABSTRACTThe ability of controlling the growth and interfaces of ultrathin dielectric films on Si and compound semiconductors by ultrahigh vacuum physical vapor deposition has led to comprehensive studies of gate stacks employing the high κ gate oxide Ga2O3(Gd2O3), and the rare earth oxides Gd2O3 and Y2O3. The epitaxy and the interfaces of Gd2O3 on GaAs, GaN, and Si were characterized with atomic precision, and show strong tendency to conform to the underlying substrate, thus providing insight into the fundamental mechanism for low interfacial state density and effective passivation of GaAs and GaN surfaces. These Gd2O3 and Y2O3 gate stacks of abrupt interfaces and controlled microstructures were employed as a model system to elucidate critical issues of materials integration in CMOS scaling.

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