Spectral Response and Short-Circuit Current

2006 ◽  
pp. 19-39
Keyword(s):  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current

The Effect of Al-BSF on Seff and Rb in Industrialized Mono-Silicon Solar Cells

2012 ◽  
Vol 472-475 ◽  
pp. 1846-1850
Author(s):  
Shan Shan Dai ◽  
Gao Jie Zhang ◽  
Xiang Dong Luo ◽  
Jing Xiao Wang ◽  
Wen Jun Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Rear Surface ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Silicon Solar Cells ◽  
Back Surface

In this work, the effect of aluminum back surface field formed by screen printed various amount of Al paste on the effective rear surface recombination velocity (Seff) and the internal rear reflectance coeffeicient (Rb) of commercial mono-silicon solar cells was investigated. We demonstrated the effect of Seffand Rbon the performance of Al-BSF solar cells by simulating them with PC1D. The simulated results showed that the lower Seffcould get higher open circuit voltage (Voc), at the same time, the larger Rbcould get higher short-circuit current (Isc). Experimentally, we investigated the Seffand Rbthrough depositing Al paste with various amount (3.7, 5, 6, and 8 mg/cm2) for fabricating Al-BSF mono-silicon solar cells. Four group cells were characterized by light I-V, spectral response, hemispherical reflectance and scanning electron microscope (SEM) measurements. It was found that, a minimum Seffof 350 cm/s was gotten from the cells with Al paste of 8 mg/cm2, which was extracted by matching quantum efficiency (QE) from 800 nm to 1200 nm with PC1D, and a maximum Rbof 53.5% was obtained from Al paste of 5 mg/cm2by calculating at 1105 nm with PC1D. When the amount of Al paste was higher than 5mg/cm2, there were less Seffand lower Rb. On the other hand, when Al amount was 3.7mg/cm2, it was too little to form a closed BSF. Based on the SEM graphs and simulations with PC1D, a simple explaination was proposed for the experimental results.

scholarly journals A Quarterthiophene-Based Dye as an Efficient Interface Modifier for Hybrid Titanium Dioxide/Poly(3-hexylthiophene)(P3HT) Solar Cells

Polymers ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 1752 ◽  
Author(s):  
Arumugam Pirashanthan ◽  
Thanihaichelvan Murugathas ◽  
Neil Robertson ◽  
Punniamoorthy Ravirajan ◽  
Dhayalan Velauthapillai
Keyword(s):  
Titanium Dioxide ◽  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Hole Mobility ◽  
Short Circuit Current ◽  
Acid Group ◽  
Open Circuit ◽  
Absorption Data

This work focused on studying the influence of dyes, including a thiophene derivative dye with a cyanoacrylic acid group ((E)-2-cyano-3-(3′,3′′,3′′′-trihexyl-[2,2′:5′,2′′:5′′,2′′′- quaterthiophene]-5-yl) acrylicacid)(4T), on the photovoltaic performance of titanium dioxide (TiO2)/poly(3-hexyl thiophene)(P3HT) solar cells. The insertion of dye at the interface improved the efficiency regardless of the dye used. However, 4T dye significantly improved the efficiency by a factor of three when compared to the corresponding control. This improvement is mainly due to an increase in short circuit current density (JSC), which is consistent with higher hole-mobility reported in TiO2/P3HT nanocomposite with 4T dye. Optical absorption data further revealed that 4T extended the spectral response of the TiO2/P3HT nanocomposite, which could also enhance the JSC. The reduced dark current upon dye insertion ensured the carrier recombination was controlled at the interface. This, in turn, increased the open circuit voltage. An optimized hybrid TiO2/P3HT device with 4T dye as an interface modifier showed an average efficiency of over 2% under-simulated irradiation of 100 mWcm−2 (1 sun) with an Air Mass 1.5 filter.

Design and modeling of an SJ infrared solar cell approaching upper limit of theoretical efficiency

2018 ◽  
Vol 32 (02) ◽  
pp. 1850014 ◽  
Author(s):  
G. S. Sahoo ◽  
G. P. Mishra
Keyword(s):  
Solar Cell ◽  
Quantum Efficiency ◽  
Conversion Efficiency ◽  
Internal Quantum Efficiency ◽  
Spectral Response ◽  
Short Circuit ◽  
Cost Effective ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

Recent trends of photovoltaics account for the conversion efficiency limit making them more cost effective. To achieve this we have to leave the golden era of silicon cell and make a path towards III–V compound semiconductor groups to take advantages like bandgap engineering by alloying these compounds. In this work we have used a low bandgap GaSb material and designed a single junction (SJ) cell with a conversion efficiency of 32.98%. SILVACO ATLAS TCAD simulator has been used to simulate the proposed model using both Ray Tracing and Transfer Matrix Method (under 1 sun and 1000 sun of AM1.5G spectrum). A detailed analyses of photogeneration rate, spectral response, potential developed, external quantum efficiency (EQE), internal quantum efficiency (IQE), short-circuit current density (J[Formula: see text]), open-circuit voltage (V[Formula: see text]), fill factor (FF) and conversion efficiency ([Formula: see text]) are discussed. The obtained results are compared with previously reported SJ solar cell reports.

Enhanced Light Absorption in a-Si:H Layers of Solar Cells by Applying Tco/Metal Back Contacts

1993 ◽  
Vol 297 ◽  
Author(s):  
G. Tao ◽  
B.S. Girwar ◽  
G.E.N. Landweer ◽  
M. Zeman ◽  
J.W. Metselaar
Keyword(s):  
Solar Cells ◽  
Metal Layer ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Back Contact ◽  
Flat Substrate ◽  
Metal Layers ◽  
Metal Back

The optimization of the back contact reflectivity for thin film a-Si:H solar cells has been performed. The results of optical calculations show that a-Si:H/TCO/Metal interfaces with a proper TCO thickness reflect much more than their a-Si:H/Metal counterparts. We compared solar cells which were deposited on a flat substrate with different back contacts. The back contacts consisted of a metal layer (aluminum, silver/aluminum) or combined TCO/metal layers (TCO/Al, TCO/Ag/Al). The same was done with solar cells which were deposited on a textured substrate. The solar cells with a TCO/metal back contact showed not only a significantly increased short-circuit current density but also an increase in the spectral response. The cells with TCO/Ag/Al back contact showed the best result.

Effect of CdCl2 Treatment of CdS Films on CdTe/CdS Solar Cells

1996 ◽  
Vol 426 ◽  
Author(s):  
W. Song ◽  
D. Mao ◽  
L. Feng ◽  
Y. Zhu ◽  
M. H. Aslan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
X Ray Diffraction ◽  
Cdcl2 Treatment ◽  
The Difference ◽  
Cds Films

AbstractWe investigated the effect of CdCl2 treatment of CdS films on the photovoltaic performance of polycrystalline CdTe/CdS solar cells. X-ray diffraction studies indicated that the diffusion of S into CdTe is qualitatively the same for CdTe/CdS films fabricated with both as-deposited and CdCl2-treated CdS. A major difference was observed in the extent of Te diffusion into CdS for the two types of CdS films. Full conversion of CdS into CdS1-yTey; was observed for films prepared with asdeposited CdS, while the formation of the ternary phase was below the detection limit for films prepared with CdCl2-treated CdS. Photoluminescence measurements confirmed this result. The difference in interdiffusion leads to differences in optical transmission of CdS films and spectral response of CdTe/CdS solar cells. An increase of 2.7 mA/cm2 in short-circuit current density was observed as a result of improved spectral response in the wavelength range of 500–600 nm for the CdCl2-treated CdS.

Photogeneration and Carrier Transport in Amorphous Silicon/Crystalline Silicon Devices

1997 ◽  
Vol 467 ◽  
Author(s):  
B. Jagannathan ◽  
W. A. Anderson
Keyword(s):  
Amorphous Silicon ◽  
Carrier Transport ◽  
Crystalline Silicon ◽  
Plasma Deposition ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Silicon Devices

ABSTRACTHydrogenated amorphous silicon (a-Si:H)/ crystalline silicon (c-Si) type heterodiodes in solar cell structures have been studied by rf glow discharge, dc magnetron sputtering, and a remote plasma deposition of a-Si:H onto p type c-Si. Carrier transport and photogeneration in such structures have been investigated by current-voltage-temperature, thermally stimulated capacitance (TSCAP), and spectral response experiments. Dark carrier conduction is found to be a combination of tunneling and interface recombination, but is dominated by either one depending on the deposition/sputtering conditions. The conditions investigated include energy of the plasma species, type of plasma cleaning, and substrate preparation techniques. For each of the conditions, the trap type, energy and concentration have been identified by TSCAP. Solar cells fabricated by the optimized fabrication scheme routinely yield 10.5% efficient devices having a short circuit current density (Jsc) of 30 mA/cm2, a open circuit voltage of 0.55 volts and a fill factor (FF) of 0.64, without an AR coating, over 0.3 cm2 area.

Preparation of Narrow-gap a-Si:H Solar Cells by VHF-PECVD Technique

2010 ◽  
Vol 1245 ◽  
Author(s):  
Do Yun Kim ◽  
Ihsanul Afdi Yunaz ◽  
Shunsuke Kasashima ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Hydrogen Flow ◽  
Long Wavelength

AbstractOptical, electrical and structural properties of silicon films depending on hydrogen flow rate (RH), substrate temperature (TS), and deposition pressure (PD) were investigated. By decreasing RH and increasing TS and PD, the optical band gap (Eopt) of silicon thin films drastically declined from 1.8 to 1.63 eV without a big deterioration in electrical properties. We employed all the investigated Si thin films for p-i-n structured solar cells as absorbers with i-layer thickness of 300 nm. From the measurement of solar cell performances, it was clearly observed that spectral response in long wavelength was enhanced as Eopt of absorber layers decreased. Using the solar cell whose Eopt of i-layer was 1.65 eV, the highest QE at long wavelength with the short circuit current density (Jsc) of 16.34 mA/cm2 was achieved, and open circuit voltage (Voc), fill factor (FF), and conversion efficiency (η) were 0.66 V, 0.57, and 6.13%, respectively.

Characterization of Strained Layer Superlattice Solar Cells by X-ray Diffraction and Current-Voltage Measurements

2009 ◽  
Vol 1211 ◽  
Author(s):  
Joshua P. Samberg ◽  
Conrad Zachary Carlin ◽  
Nadia A. El-Masry ◽  
Geoffrey K. Bradshaw ◽  
Peter C. Colter ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Activation Energies ◽  
Saturation Current ◽  
X Ray Diffraction ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Reverse Saturation Current

AbstractInGaAs can be used to enhance the response of solar cells past the 1.43 eV cutoff of GaAs. Strained-layer superlattice (SLS) structures with high indium and phosphorus compositions (up to 35% and 68% respectively) have been grown successfully. SLS solar cells with indium and high phosphorus compositions (up to 15% and 85% respectively) have been grown successfully. The spectral response of the solar cells has been extended to as low as 1.27 eV. This enhancement is also shown by an increase in the short circuit current, with a small reduction in the short circuit voltage as compared to standard GaAs p-n junction for AM1.5 and one sun.Dark current curves show the extent of recombination in the superlattice. The reverse saturation current in the recombination region (0.2-0.8 V) was determined using a non-linear least squares fitting routine. An Arrhenius plot was generated by finding the reverse saturation current over a temperature range of 300-370 K. The low recombination devices show non-ideality constants of 1.7 with activation energies of 1.3-1.4 eV. The high recombination devices have non-ideality constants (˜2.3) and lower activation energies of 1.1 eV.

Photovoltaic Characteristics of Ultra-Thin Single Crystalline Silicon Solar Cells

2016 ◽  
Vol 25 (01n02) ◽  
pp. 1640008
Author(s):  
R. Miyazawa ◽  
H. Wakabayashi ◽  
K. Tsutsui ◽  
H. Iwai ◽  
K. Kakushima
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Response Measurement ◽  
Single Crystalline ◽  
Si Solar Cells ◽  
Photovoltaic Characteristics

Photovoltaic characteristics of ultra-thin single crystalline Si solar cells with thicknesses ranging from 7.6 to 3.3 nm are presented. While the short-circuit current (ISC) AM1.5 illumination has shown a linear relationship with the volume of the Si layer, a gradual increase in the open-circuit voltage (VOC) with thinner Si layer has been confirmed, implying the bandgap enlargement of the Si layer due to quantum confinement. Spectral response measurement has revealed an increased optical bandgap of 1.3 eV for 3.3-nm-thick Si solar cells, which is wider than that of 7.6-nm-thick Si ones. Although some process related issues have become clear during the fabrication of solar cells, they can be utilized as top cells for tandem configurations, exceeding the limit of the bulk Si solar cells.

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