Statistical Library Characterization using Belief Propagation across Multiple Technology Nodes

Abstract For the visual world in which we operate, the core issue is to conceptualize how its three-dimensional structure is encoded through the neural computation of multiple depth cues and their integration to a unitary depth structure. One approach to this issue is the full Bayesian model of scene understanding, but this is shown to require selection from the implausibly large number of possible scenes. An alternative approach is to propagate the implied depth structure solution for the scene through the “belief propagation” algorithm on general probability distributions. However, a more efficient model of local slant propagation is developed as an alternative.The overall depth percept must be derived from the combination of all available depth cues, but a simple linear summation rule across, say, a dozen different depth cues, would massively overestimate the perceived depth in the scene in cases where each cue alone provides a close-to-veridical depth estimate. On the other hand, a Bayesian averaging or “modified weak fusion” model for depth cue combination does not provide for the observed enhancement of perceived depth from weak depth cues. Thus, the current models do not account for the empirical properties of perceived depth from multiple depth cues.The present analysis shows that these problems can be addressed by an asymptotic, or hyperbolic Minkowski, approach to cue combination. With appropriate parameters, this first-order rule gives strong summation for a few depth cues, but the effect of an increasing number of cues beyond that remains too weak to account for the available degree of perceived depth magnitude. Finally, an accelerated asymptotic rule is proposed to match the empirical strength of perceived depth as measured, with appropriate behavior for any number of depth cues.

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Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2009p0081 ◽

2009 ◽

Author(s):

E. Hendarto ◽

S.L. Toh ◽

J. Sudijono ◽

P.K. Tan ◽

H. Tan ◽

...

Keyword(s):

Electron Microscope ◽

Focused Ion Beam ◽

Failure Modes ◽

Ion Beam ◽

Electrical Characterization ◽

Nickel Silicide ◽

Fault Isolation ◽

Technology Nodes ◽

Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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Dynamic Photon Emission on FinFET Devices Through Novel Scan Test Approaches

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0160 ◽

2019 ◽

Author(s):

Ranganathan Gopinath ◽

Ravikumar Venkat Krishnan ◽

Lua Winson ◽

Phoa Angeline ◽

Jin Jie

Keyword(s):

Test Pattern ◽

Photon Emission ◽

Pattern Generator ◽

Lower Probability ◽

Automated Test Equipment ◽

Use Patterns ◽

Infra Red ◽

Automatic Test Pattern Generator ◽

Technology Nodes ◽

Established Technique

Abstract Dynamic Photon Emission Microscopy (D-PEM) is an established technique for isolating short and open failures, where photons emitted by transistors are collected by sensitive infra-red detectors while the device under test is electrically exercised with automated test equipment (ATE). Common tests, such as scan, use patterns that are generated through Automatic Test Pattern Generator (ATPG) in compressed mode. When these patterns are looped for D-PEM, it results in indeterministic states within cells during the load or unload sequences, making interpretation of emission challenging. Moreover, photons are emitted with lower probability and lesser energies for smaller technology nodes such as the FinFET. In this paper, we will discuss executing scan tests in manners that can be used to bring out emission which did not show up in conventional test loops.

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SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2013p0217 ◽

2013 ◽

Author(s):

Erik Paul ◽

Holger Herzog ◽

Sören Jansen ◽

Christian Hobert ◽

Eckhard Langer

Keyword(s):

Electron Microscope ◽

High Resolution ◽

Scanning Electron Microscope ◽

Failure Analysis ◽

Case Studies ◽

State Of The Art ◽

Root Cause ◽

Highly Efficient ◽

Technology Nodes ◽

Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

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Use of Second Harmonic and Thermal Effects of Laser Voltage Probing for Better Fault Isolation

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0514 ◽

2016 ◽

Author(s):

Ramya Yeluri ◽

Ravishankar Thirugnanasambandam ◽

Cameron Wagner ◽

Jonathan Urtecho ◽

Jan M. Neirynck

Keyword(s):

Duty Cycle ◽

Thermal Effects ◽

Second Harmonic ◽

Fault Isolation ◽

Advanced Technology ◽

Temperature Dependent ◽

First Case ◽

Improve Accuracy ◽

Degradation Monitoring ◽

Technology Nodes

Abstract Laser voltage probing (LVP) has been extensively used for fault isolation over the last decade; however fault isolation in practice primarily relies on good-to-bad comparisons. In the case of complex logic failures at advanced technology nodes, understanding the components of the measured data can improve accuracy and speed of fault isolation. This work demonstrates the use of second harmonic and thermal effects of LVP to improve fault isolation with specific examples. In the first case, second harmonic frequency is used to identify duty cycle degradation. Monitoring the relative amplitude of the second harmonic helps identify minute deviations in the duty cycle with a scan over a region, as opposed to collecting multiple high resolution waveforms at each node. This can be used to identify timing degradation such as signal slope variation as well. In the second example, identifying abnormal data at the failing device as temperature dependent effect helps refine the fault isolation further.

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Precise Localization of 28 nm via Chain Resistive Defect Using EBAC and Nanoprobing

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2012p0067 ◽

2012 ◽

Author(s):

P. Larré ◽

H. Tupin ◽

C. Charles ◽

R.H. Newton ◽

A. Reverdy

Keyword(s):

Electron Beam ◽

Failure Analysis ◽

Test Structure ◽

Precise Localization ◽

Isolation Method ◽

Accurate Detection ◽

Conventional Methods ◽

Technology Nodes ◽

Tem Lamella

Abstract As technology nodes continue to shrink, resistive opens have become increasingly difficult to detect using conventional methods such as AVC and PVC. The failure isolation method, Electron Beam Absorbed Current (EBAC) Imaging has recently become the preferred method in failure analysis labs for fast and highly accurate detection of resistive opens and shorts on a number of structures. This paper presents a case study using a two nanoprobe EBAC technique on a 28nm node test structure. This technique pinpointed the fail and allowed direct TEM lamella.

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