Current Density Dependence of Microstructure and Lattice Expansion in Porous Silicon Layers Prepared by Anodization

1991 ◽  
Author(s):  
Kuniko TAKEMOTO ◽  
Hiroshi SUGIYAMA ◽  
Osamu NITTONO
Keyword(s):  
Porous Silicon ◽  
Density Dependence ◽  
Current Density ◽  
Lattice Expansion

Basic properties of anodized porous silicon formed under uniform current density

1994 ◽  
Vol 77 (4) ◽  
pp. 97-105
Author(s):  
Hidekazu Aoyagi ◽  
Akira Motohashi ◽  
Akira Kinoshita ◽  
Tomoyoshi Aono ◽  
Akinobu Satoh
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Basic Properties ◽  
Uniform Current

Structural, Surface Morphological and Photoluminescence Properties of Nanostructured Porous Silicon Material for Optoelectronics Application

2012 ◽  
Vol 584 ◽  
pp. 290-294 ◽  
Author(s):  
Jeyaprakash Pandiarajan ◽  
Natarajan Jeyakumaran ◽  
Natarajan Prithivikumaran
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Light Emitting Diode ◽  
Radiative Transition ◽  
Sem Images ◽  
Optoelectronic Application ◽  
Gap Opening ◽  
P Type

The promotion of silicon (Si) from being the key material for microelectronics to an interesting material for optoelectronic application is a consequence of the possibility to reduce its device dimensionally by a cheap and easy technique. In fact, electrochemical etching of Si under controlled conditions leads to the formation of nanocrystalline porous silicon (PS) where quantum confinement of photo excited carriers and surface species yield to a band gap opening and an increased radiative transition rate resulting in efficient light emission. In the present study, the nanostructured PS samples were prepared using anodic etching of p-type silicon. The effect of current density on structural and optical properties of PS, has been investigated. XRD studies confirm the presence of silicon nanocrystallites in the PS structure. By increasing the current density, the average estimated values of grain size are found to be decreased. SEM images indicate that the pores are surrounded by a thick columnar network of silicon walls. The observed PL spectra at room temperature for all the current densities confirm the formation of PS structures with nanocrystalline features. PL studies reveal that there is a prominent visible emission peak at 606 nm. The obtained variation of intensity in PL emission may be used for intensity varied light emitting diode applications. These studies confirm that the PS is a versatile material with potential for optoelectronics application.

Effect of current density on the porous silicon preparation as gas sensors**

2021 ◽  
Vol 30 (1) ◽  
pp. 257-264
Author(s):  
Muna H. Kareem ◽  
Adi M. Abdul Hussein ◽  
Haitham Talib Hussein
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Current Density ◽  
Room Temperature ◽  
Low Cost ◽  
High Surface ◽  
Volume Ratio ◽  
Etching Time ◽  
Force Microscopy ◽  
Materials Used

Abstract In this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an etching time of 10 min and hydrofluoric acid concentration of 40%. Well-ordered n-type PSi (100) was carefully studied for its chemical composition, surface structure and bond configuration of the surface via X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy and photoluminescence tests. Results showed that the best sensitivity of PSi was to acetone gas than to ethanol under the same conditions at an etching current density of 30 mA/cm2, reaching about 2.413 at a concentration of 500 parts per million. The PSi layers served as low-cost and high-quality acetone gas sensors. Thus, PSi can be used to replace expensive materials used in gas sensors that function at low temperatures, including room temperature. The material has an exceptionally high surface-to-volume ratio (increasing surface area) and demonstrates ease of fabrication and compatibility with manufacturing processes of silicon microelectronics.

Current-density dependence of the vortex pinning energy in YBaCuO

1994 ◽  
Vol 194-196 ◽  
pp. 1859-1860 ◽  
Author(s):  
W. Lang ◽  
C. Fussenegger ◽  
P. Schwab ◽  
X.Z. Wang ◽  
D. Bäuerle
Keyword(s):  
Density Dependence ◽  
Current Density ◽  
Vortex Pinning ◽  
Pinning Energy

Boron-Doped Spherical Hollow-Porous Silicon Local Lattice Expansion toward a High-Performance Lithium-Ion-Battery Anode

2019 ◽  
Vol 58 (7) ◽  
pp. 4592-4599 ◽  
Author(s):  
Yongpeng Ren ◽  
Xiangyang Zhou ◽  
Jingjing Tang ◽  
Jing Ding ◽  
Song Chen ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Lithium Ion Battery ◽  
High Performance ◽  
Lithium Ion ◽  
Lattice Expansion ◽  
Boron Doped ◽  
Local Lattice ◽  
Spherical Hollow ◽  
Battery Anode

Fluence and current density dependence of silver nanocluster dimensions in ion-implanted fused silica

1998 ◽  
Vol 8 (2) ◽  
pp. 457-461 ◽  
Author(s):  
Marta Antonello ◽  
George W. Arnold ◽  
Giancarlo Battaglin ◽  
Renzo Bertoncello ◽  
Elti Cattaruzza ◽  
...  
Keyword(s):  
Density Dependence ◽  
Current Density ◽  
Fused Silica ◽  
Silver Nanocluster ◽  
Ion Implanted

Effect of resistivity and current density on photoluminescence in porous silicon produced at low HF concentration

1998 ◽  
Vol 84 (11) ◽  
pp. 6345-6350 ◽  
Author(s):  
Zeno Gaburro ◽  
Hoydoo You ◽  
Davorin Babić
Keyword(s):  
Porous Silicon ◽  
Current Density
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