Growth Mechanisms and Diffusion in Multinary and Multilayer Chalcopyrite Thin Films

1993 ◽  
Vol 32 (S3) ◽  
pp. 57 ◽  
Author(s):  
R. Klenk ◽  
T. Walter ◽  
D. Schmid ◽  
H. W. Schock
Keyword(s):  
Thin Films ◽  
Growth Mechanisms ◽  
And Diffusion

Effects of diffusion temperature and diffusion time on fabrication of Na-diffused p-type ZnO thin films

2012 ◽  
Vol 80 ◽  
pp. 175-177 ◽  
Author(s):  
Huibin Liu ◽  
Xinhua Pan ◽  
Ping Ding ◽  
Zhizhen Ye ◽  
Haiping He ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Time ◽  
Zno Thin Films ◽  
Diffusion Temperature ◽  
P Type ◽  
And Diffusion

Effect of Interface Conditions on Yield Behavior of Passivated Copper Thin Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1863-1870 ◽  
Author(s):  
Richard P. Vinci ◽  
Stefanie A. Forrest ◽  
John C. Bravman
Keyword(s):  
Thin Films ◽  
Driving Force ◽  
Copper Film ◽  
Dislocation Motion ◽  
Yield Behavior ◽  
Dislocation Glide ◽  
Preferential Diffusion ◽  
Continuous Vacuum ◽  
And Diffusion ◽  
Induced Dislocation

Wafer curvature was used to study the thermal–mechanical behavior of 1-μm Cu thin films capped with a 100-nm-thick Si3N4 layer. These films were grown with either a Ta or a Si3N4 underlayer. Films on Si3N4 that were exposed to oxygen at the film/capping layer interface or at the center of the copper layer exhibited Bauschinger-like yielding at low stress. Stacks deposited under continuous vacuum, with a Ta underlayer, with carbon exposure at the upper surface of the copper film, or with oxygen exposure of only the underlayer did not demonstrate the anomalous yielding. Preferential diffusion of oxygen into copper grain boundaries or interfaces is the likely cause of the early yield behavior. Possible mechanisms include an increase in interface adhesion due to the presence of oxygen in solution and diffusion-induced dislocation glide as an additional driving force for dislocation motion at low applied stress.

New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric Properties

2019 ◽  
Vol 544 (1) ◽  
pp. 33-37
Author(s):  
O. N. Sergeeva ◽  
A. V. Solnyshkin ◽  
S. A. Kukushkin ◽  
A. V. Osipov ◽  
Sh. Sharofidinov ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Growth Mechanisms ◽  
Pyroelectric Properties

Comparative Study of Photocarrier Dynamics in CVD-deposited CuWO4, CuO, and WO3 Thin Films for Photoelectrocatalysis

2020 ◽  
Vol 234 (4) ◽  
pp. 699-717
Author(s):  
James Hirst ◽  
Sönke Müller ◽  
Daniel Peeters ◽  
Alexander Sadlo ◽  
Lukas Mai ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Terahertz Spectroscopy ◽  
Chemical Vapor ◽  
Photoelectrochemical Cells ◽  
Time Resolved ◽  
And Diffusion ◽  
Wo3 Thin Films ◽  
Carrier Transport Properties

AbstractThe temporal evolution of photogenerated carriers in CuWO4, CuO and WO3 thin films deposited via a direct chemical vapor deposition approach was studied using time-resolved microwave conductivity and terahertz spectroscopy to obtain the photocarrier lifetime, mobility and diffusion length. The carrier transport properties of the films prepared by varying the copper-to-tungsten stoichiometry were compared and the results related to the performance of the compositions built into respective photoelectrochemical cells. Superior carrier mobility was observed for CuWO4 under frontside illumination.

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